IR-enhanced CCD area image sensors S11500-1007, S11501-1007S Enhanced near infrared sensitivity: QE=40% (λ=1000 nm), back-thinned FFT-CCD The S11500-1007 and S11501-1007S are FFT-CCD image sensors for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on the back side of the CCD. This allows the S11500-1007 and S11501-1007S to have much higher sensitivity than our previous products (S7030/S7031 series). In addition to having high near infrared sensitivity, the S11500-1007 and S11501-1007S can be used as an image sensor with a long photosensitive area in the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning operation also ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add signals digitally. The S11500-1007 and S11501-1007S have a pixel size of 24 × 24 μm and image size of 24.576 (H) × 2.928 (V) mm (1024 × 122 pixels). The S11500-1007 and S11501-1007S are pin compatible with the S7030/S7031 series, and so operate under the same drive conditions. Features Applications Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) Raman spectrometer, etc. Pixel size: 24 × 24 μm Line, pixel binning Wide spectral response range Low readout noise Wide dynamic range MPP operation Spectral response (without window)*1 (Typ. Ta=25 °C) 100 S11500-1007 S11501-1007S 90 Quantum efficiency (%) 80 70 Previous type (S7030-1007) 60 50 40 30 20 Front-illuminated CCD 10 0 200 400 600 800 1000 1200 Wavelength (nm) KMPDB0325ED *1: Spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. www.hamamatsu.com 1 CCD area image sensors S11500-1007, S11501-1007S Structure Parameter Pixel size (H × V) Number of total pixels (H × V) Number of effective pixels (H × V) Image size (H × V) Vertical clock phase Horizontal clock phase Output circuit Package Window Cooling S11500-1007 S11501-1007S 24 × 24 μm 1044 × 128 1024 × 122 24.576 × 2.928 mm 2-phase 2-phase One-stage MOSFET source follower 24-pin ceramic DIP (refer to dimensional outline) Quartz glass*2 AR coated sapphire Non-cooled One-stage TE-cooled *2: Resin sealing Absolute maximum ratings Parameter Condition Operating temperature*3 Storage temperature Output transistor drain voltage Reset drain voltage Vertical input source voltage Horizontal input source voltage Vertical input gate voltage Horizontal input gate voltage Summing gate voltage Output gate voltage Reset gate voltage Transfer gate voltage Vertical shift register clock voltage Horizontal shift register clock voltage TE-cooler maximum current*4 Tc*5=Th*6=25 °C TE-cooler maximum voltage Tc*5=Th*6=25 °C Maximum temperature of heat radiating side Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Imax Vmax - Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 - Typ. - Max. +50 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 3.0 3.6 70 Unit °C °C V V V V V V V V V V V V A V °C *3: Package temperature *4: If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60% of this maximum current. *5: Temperature of the cooling side of thermoelectric cooler *6: Temperature of the heat radiating side of thermoelectric cooler Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. 2 CCD area image sensors S11500-1007, S11501-1007S Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Vertical input source Horizontal input source Test point Vertical input gate Horizontal input gate High Vertical shift register clock voltage Low High Horizontal shift register clock voltage Low High Summing gate voltage Low High Reset gate voltage Low High Transfer gate voltage Low External load resistance Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL RL Min. 18 11.5 1 -9 -9 4 -9 4 -9 4 -9 4 -9 4 -9 20 Typ. 20 12 3 0 VRD VRD -8 -8 6 -8 6 -8 6 -8 6 -8 6 -8 22 Max. 22 12.5 5 8 -7 8 -7 8 -7 8 -7 8 -7 24 Unit V V V V V V V V Min. - Typ. 0.25 3000 180 30 30 75 0.99999 16 3 13 Max. 1 18 4 14 Unit MHz pF pF pF pF pF V kΩ mW V V V V V kΩ Electrical characteristics (Ta=25 °C) Parameter Signal output frequency Vertical shift register capacitance Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance Charge transfer efficiency*7 DC output level Output impedance Power consumption*8 Symbol fc CP1V, CP2V CP1H, CP2H CSG CRG CTG CTE Vout Zo P 0.99995 14 - *7: Charge transfer efficiency per pixel, measured at half of the full well capacity *8: Power consumption of the on-chip amplifier plus load resistance 3 CCD area image sensors S11500-1007, S11501-1007S Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Saturation output voltage Vertical Full well capacity Horizontal*9 CCD node sensitivity 25 °C Dark current*10 (MPP mode) 0 °C Readout noise*11 Line binning Dynamic range*12 Area scanning Photoresponse nonuniformity*13 Spectral response range White spots Point defect*14 Black spots Blemish Cluster defect*15 Column defect*16 Symbol Vsat Fw Sv DS Nr DR PRNU λ - Min. 240 800 1.8 100000 30000 - Typ. Fw × Sv 320 1000 2.2 100 10 8 125000 40000 ±3 200 to 1100 - Max. 400 40 16 ±10 0 10 3 0 Unit V keμV/ee-/pixel/s e- rms % nm - *9: The linearity is ±1.5 %. *10: Dark current nearly doubles for every 5 to 7 °C increase in temperature. *11: Measured with a HAMAMATSU C4880 digital CCD camera with a CDS circuit (sensor temperature: -40 °C, operating frequency: 150 kHz) *12: Dynamic range = Full well capacity / Readout noise *13: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm) Fixed pattern noise (peak to peak) × 100 [%] Photoresponse nonuniformity = Signal *14: White spots Pixels whose dark current is higher than 1 ke- after one-second integration at 0 °C. Black spots Pixels whose sensitivity is lower than one-half of the average pixel output. (measured with uniform light producing one-half of the saturation charge) *15: 2 to 9 contiguous defective pixels *16: 10 or more contiguous defective pixels 4 CCD area image sensors S11500-1007, S11501-1007S Dark current vs. temperature Spectral transmittance characteristics (Typ.) 1000 (Typ. Ta=25 °C) 100 90 80 Quartz window 70 Transmittance (%) 10 1 AR coated sapphire 60 50 40 30 20 0.1 10 0.01 -50 -40 -30 -20 -10 0 10 20 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 30 Temperature (°C) Wavelength (nm) KMPDB0256EA KMPDB0110EA Device structure (conceptual drawing of top view) Effective pixels Thinning Effective pixels 23 15 20 21 13 14 2-bevel 22 H 1 signal out n 24 2 5 4 3 2 12345 4-bevel V Thinning Dark current (e-/pixel/s) 100 12 Horizontal shift register 2 3 4 5 4 blank pixels 8 2 n 11 V=122 H=1024 10 9 4 blank pixels signal out Horizontal shift register 6-bevel 6-bevel Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as needed. KMPDC0364EB 5 CCD area image sensors S11500-1007, S11501-1007S Timing chart (line binning) Integration time (shutter has to open) Vertical binning period (shutter has to closed) Readout period (shutter has to closed) Tpwv 1 2 P1V 3..126 127 128← 122 + 6 (bevel) Tovr P2V, TG Tpwh, Tpws 4..1042 1043 P1H 1 2 1044 3 P2H, SG Tpwr RG OS D1 D2..D10, S1..S1024, D11..D19 D20 KMPDC0353EB P1V, P2V, TG* 17 P1H, P2H*17 SG RG TG-P1H Parameter Pulse width Rise and fall times Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Duty ratio Pulse width Rise and fall times Overlap time Symbol Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Min. 6 10 500 10 40 500 10 40 100 5 3 Typ. 8 2000 50 2000 50 - Max. 60 60 - Unit μs ns ns ns % ns ns % ns ns μs *17: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 6 CCD area image sensors S11500-1007, S11501-1007S Dimensional outline (unit: mm) S11500-1007 Window 28.6* Photosensitive area 24.58 22.4 ± 0.30 8.2* 1 22.9 ± 0.30 13 2.928 24 12 2.54 ± 0.13 44.0 ± 0.44 1st pin index mark 4.4 ± 0.44 4.8 ± 0.49 3.75 ± 0.44 2.35 ± 0.15 3.0 Photosensitive surface (24 ×) 0.5 ± 0.05 * Area of window that guarantees the transmittance in the “Spectral transmittance characteristics” graph KMPDA0264EB S11501-1007S Window 28.6* Photosensitive area 24.58 22.4 ± 0.30 19.0 4.0 1 22.9 ± 0.30 13 2.928 12 2.54 ± 0.13 44.0 ± 0.44 52.0 60.0 ± 0.30 1st pin index mark Photosensitive surface 7.7 ± 0.68 6.92 ± 0.63 6.32 ± 0.63 1.0 4.89 ± 0.15 TE-cooler 3.0 8.2* 24 (24 ×) 0.5 ± 0.05 * Area of window that guarantees the transmittance in the “Spectral transmittance characteristics” graph KMPDA0328EA 7 CCD area image sensors S11500-1007, S11501-1007S Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol RD OS OD OG SG P2H P1H IG2H IG1H ISH TG*18 P2V P1V SS ISV IG2V IG1V RG S11500-1007 Function Reset drain Output transistor source Output transistor drain Output gate Summing gate CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) Transfer gate CCD vertical register clock-2 CCD vertical register clock-1 Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) Reset gate Symbol RD OS OD OG SG P2H P1H IG2H IG1H ISH TG*18 P2V P1V Th1 Th2 PP+ SS ISV IG2V IG1V RG S11501-1007S Function Reset drain Output transistor source Output transistor drain Output gate Summing gate CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) Test point (horizontal input source) Transfer gate CCD vertical register clock-2 CCD vertical register clock-1 Thermistor Thermistor TE-coolerTE-cooler+ Substrate (GND) Test point (vertical input source) Test point (vertical input gate-2) Test point (vertical input gate-1) Reset gate Remark (standard operation) +12 V RL=22 kΩ +20 V +3 V Same pulse as P2H -8 V -8 V Connect to RD Same pulse as P2V GND Connect to RD -8 V -8 V *18: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2V. 8 CCD area image sensors S11500-1007, S11501-1007S Specifications of built-in TE-cooler (S11501-1007S, Typ.) Parameter Internal resistance Maximum heat absorption*19 Symbol Condition Rint Ta=25 °C Qmax Specification 1.2 5.1 Unit Ω W *19: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum current is supplied to the unit. (Typ. Ta=25 °C) Voltage vs. current CCD temperature vs. current Voltage (V) 6 30 20 5 10 4 0 3 -10 2 -20 1 -30 0 0 1 2 3 4 CCD temperature (°C) 7 -40 Current (A) KMPDB0179EA Specifications of built-in temperature sensor (S11501-1007S) A thermistor chip is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. The characteristics of the thermistor used are as follows. Resistance RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2) RT1: Resistance at absolute temperature T1 [K] RT2: Resistance at absolute temperature T2 [K] BT1/T2: B constant [K] (Typ.) 1 MΩ 100 kΩ R298=10 kΩ B298/323=3450 K 10 kΩ 220 240 260 280 300 Temperature (K) KMPDB0111EB 9 CCD area image sensors S11500-1007, S11501-1007S Precautions (electrostatic countermeasures) · When handling CCD sensors, always wear a wrist strap and also anti-static clothing, gloves, and shoes, etc. The wrist strap should have a protective resistor (about 1 MΩ) on the side closer to the body and be grounded properly. Using a wrist strap having no protective resistor is hazardous because you may receive an electrical shock if electric leakage occurs. · Avoid directly placing these sensors on a work bench that may carry an electrostatic charge. · Provide ground lines with the work bench and work floor to allow static electricity to discharge. · Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Element cooling/heating temperature incline rate When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Image sensors Technical information ∙ FFT-CCD area image sensor Multichannel detector heads C7040, C7041 Features C7040: for S7030 series and S11500-1007 C7041: for S7031 series and S11501-1007S Area scanning or full line-binnng operation Readout frequency: 250 kHz Readout noise: 20 e- rms ΔT=50 °C (ΔT changes by cooling method.) Input Master start Symbol VD1 VA1+ VA1VA2 VD2 Vp VF φms Master clock φmc Supply voltage Specification +5 Vdc, 200 mA +15 Vdc, +100 mA -15 Vdc, -100 mA +24 Vdc, 30 mA +5 Vdc, 30 mA (C7041) +5 Vdc, 2.5 A (C7041) +12 Vdc, 100 mA (C7041) HCMOS logic compatible HCMOS logic compatible, 1 MHz 10 CCD area image sensors S11500-1007, S11501-1007S Multichannel detector head controller C7557-01 Features For control of multichannel detector head and data acquisition Easy control and data acquisition using supplied software via USB interface Connection example Shutter* timing pulse AC cable (100 to 240 V included with C7557-01) Trig. POWER Dedicated cable (included with C7557-01) SIGNAL I/O USB cable (included with C7557-01) TE CONTROL I/O Image sensor + Multichannel detector head C7557-01 PC [Windows 7 (32-bit)] (USB 2.0) * Shutter, etc. are not available. KACCC0402EC Information described in this material is current as of December, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1125E06 Dec. 2015 DN 11