IMAGE SENSOR CCD area image sensor S9972/S9973 series Front-illuminated FFT-CCD, high near IR sensitivity The S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes the S9972/S9973 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. The S9972/S9973 series also feature low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic range. The S9972/S9973 series have an effective pixel size of 24 × 24 µm and are available in image areas of 24.576 (H) × 2.976 (V) mm2 (1024 × 124 pixels) and 24.576 (H) × 6.048 (V) mm2 (1024 × 252 pixels). The S9972/S9973 series are pin compatible with the S9970/S9971 series. (Operating conditions and characteristics are a little bit different from the S9970/S9971 series.) Features Applications l 1024 (H) × 124 (V) and 1024 (H) × 252 (V) pixel format l Pixel size: 24 × 24 µm l Line/pixel binning l 100% fill factor l Wide dynamic range l Low dark signal l Low readout noise l MPP operation l High near IR sensitivity l Fluorescence spectrometer, ICP l Raman spectrometer l Industrial inspection requiring l Semiconductor inspection l DNA sequencer l Low-light-level detection ■ Selection guide Type no. S9972-1007 S9972-1008 S9973-1007 S9973-1008 Cooling Non-cooled One-stage TE-cooled Number of total pixels Number of active pixels Active area [mm (H) × mm (V)] 1044 × 128 1044 × 256 1044 × 128 1044 × 256 1024 × 124 1024 × 252 1024 × 124 1024 × 252 24.576 × 2.976 24.576 × 6.048 24.576 × 2.976 24.576 × 6.048 Suitable multichannel detector head C7020-02 C7021-02 C7025-02 ■ General ratings Parameter Pixel size Vertical clock phase Horizontal clock phase Output circuit Package S9972 series S9973 series 24 (H) × 24 (V) µm 2-phase 2-phase One-stage MOSFET source follower 24-pin ceramic DIP (refer to dimensional outlines) S9973-1007: sapphire Window*1 Quartz glass S9973-1008: AR-coated sapphire *1: Temporary window type (ex. S9972-1007N) and UV coat type (ex. S9972-1007UV) are available upon request. (On the temporary window type, a window is temporarily attached by tape to protect the CCD chip and wires.) 1 CCD area image sensor S9972/S9973 series ■ Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature Storage temperature Output transistor drain voltage Reset drain voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Summing gate voltage Output gate voltage Reset gate voltage Transfer gate voltage Vertical shift register clock voltage Horizontal shift register clock voltage Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -15 -15 -15 -15 -15 -15 -15 -15 Typ. - Max. +50 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V V V Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL RL Min. 18 12 -0.5 -8 -8 0 -9 0 -9 0 -9 0 -9 0 -9 9 Typ. 20 13 0 0 VRD VRD 0 0 4 -8 4 -8 4 -8 4 -8 4 -8 10 Max. 22 14 2 6 -7 6 -7 6 -7 6 -7 6 -7 11 Unit V V V V V V V V Typ. 0.1 1600 3200 180 7 7 100 0.99999 15 3 15 Max. 1 18 - Unit MHz ■ Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low External load resistance V V V V V kΩ ■ Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Signal output frequency fc Vertical shift register S9972/S9973-1007 CP1V, CP2V capacitance S9972/S9973-1008 Horizontal shift register capacitance CP1H, CP2H Summing gate capacitance CSG Reset gate capacitance CRG Transfer gate capacitance CTG Transfer efficiency*2 CTE 0.99995 DC output level Vout 12 Output impedance Zo Power dissipation*3 P *2: Charge transfer efficiency per pixel, measured at half of the full well capacity *3: Power dissipation of the on-chip amplifier plus load resistance 2 pF pF pF pF pF V kΩ mW CCD area image sensor S9972/S9973 series ■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Saturation output voltage Vsat Fw × Sv V Full well Vertical 120 240 Fw kecapacity Horizontal 240 480 Sv 2.8 µV/eCCD node sensitivity*4 5 Dark current* +25 °C 2000 30000 DS e-/pixel/s (MPP mode) 0 °C 100 1500 Readout noise*6 Nr 4 18 e-rms Line binning 60000 120000 Dynamic range*7 Area scanning 30000 60000 Spectral response range λ 400 to 1100 nm Photo response non-uniformity*8 PRNU ±10 % Point defects*9 0 Blemish Cluster defects*10 0 0 Column defects*11 *4: VOD=20 V , Load resistance=10 kΩ *5: Dark current nearly doubles for every 5 to 7 °C increase in temperature. *6: -40 °C, operating frequency is 80 kHz. *7: Dynamic range (DR) = Full well capacity / Readout noise *8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm) Photo response non-uniformity = Fixed pattern noise (peak to peak) Signal × 100 [%] *9: White spots Pixels that generate dark current higher than 3% of the saturation. (Measured at 0 °C, Ts=1 s) Black spots Pixels whose sensitivity is lower than one-half of the average pixel output (Measured with uniform light producing one-half of the saturation charge) *10: 2 to 9 contiguous defective pixels *11: 10 or more contiguous defective pixels ■ Spectral response (without window)*12 ■ Spectral transmittance characteristics of window material (Typ. Ta=25 ˚C) 50 S9970/S9971 series S9972/S9973 series 90 80 40 Quartz glass Transmittance (%) Quantum efficiency (%) (Typ. Ta=25 ˚C) 100 30 20 70 60 AR-coated sapphire Sapphire 50 40 30 20 10 10 0 200 300 400 500 600 700 800 900 1000 1100 1200 0 100 200 300 400 500 600 700 800 900 1000 Wavelength (nm) Wavelength (nm) KMPDB0257EC KMPDB0310EA *12: Spectral response with sapphire or AR-coated sapphire is decreased according to the spectral transmittance characteristic of window material. 3 CCD area image sensor ■ Dark current vs. temperature ■ Window material Type No. (Typ.) 10000 S9972 series S9973-1007 1000 Dark current (e-/pixel/s) S9972/S9973 series S9973-1008 100 Window material Quartz glass*13 (option: window-less) Sapphire*14 (option: window-less) AR-coated sapphire*14 (option: window-less) *13: Resin sealing *14: Hermetic sealing 10 1 0.1 0.01 -50 -40 -30 -20 -10 0 10 20 30 Temperature (˚C) KMPDB0302EA ■ Device structure (conceptual drawing of top view in dimensional outlines) IG1V IG2V ISV 24 23 22 SS 20 TG 16 P1V 15 P2V 14 ...... V 1 RD 2 OS 3 ...... ...... H D11 D12 D13 D14 D15 D16 D17 D18 D19 D20 RG D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 1 V=124, 252 H=1024 13 ISH 12 IG1H 4 OD 5 OG 6 SG 9 10 11 2 isolation pixels 2 isolation pixels P2H P1H IG2H 4 optical 4 optical 1024 signal out black pixels 4 blank pixels 4 blank pixels black pixels KMPDC0237EB Pixel format Blank 4 Optical Black 4 Left ← Horizontal Direction → Right Isolation Effective Isolation 2 1024 2 Top ← Vertical Direction → Bottom Isolation Effective Isolation 2 124 or 252 2 4 Optical Black 4 Blank 4 CCD area image sensor S9972/S9973 series ■ Timing chart Line binning Integration period (shutter has to be open) Vertical binning period (shutter has to be closed) 3..126 3..254 Tpwv 1 127 255 Readout period (shutter has to be closed) 128← 124 + 4 (isolation): S9972/S9973-1007 256← 252 + 4 (isolation): S9972/S9973-1008 2 P1V Tovr P2V, TG Tpwh, Tpws P1H 1 4..1042 1043 2 1044: S9972/S9973-1007/-1008 3 P2H, SG Tpwr RG OS D1 D2 D19 D3..D10, S1..S1024, D11..D18 D20 KMPDC0238EB Area scanning (large full well mode) Integration period (shutter has to be open) Readout period (shutter has to be closed) 4..127 128←124 + 4 (isolation): S9972/S9973-1007 4..255 256←252 + 4 (isolation): S9972/S9973-1008 Tpwv 1 2 3 P1V P2V, TG P1H P2H, SG RG OS Tovr P2V, TG Enlarged view Tpwh, Tpws P1H P2H, SG Tpwr RG OS D1 D2 D3 D4 D18 D5..D10, S1..S1024, D11..D17 D19 D20 KMPDC0240EB Parameter Symbol Min. 6.0 Pulse width*15 Tpwv P1V, P2V, TG 12 Rise and fall times Tprv, Tpfv 200 Pulse width Tpwh 500 P1H, P2H Rise and fall times*15 Tprh, Tpfh 10 Duty ratio Pulse width Tpws 500 SG Rise and fall times Tprs, Tpfs 10 Duty ratio Pulse width Tpwr 100 RG Rise and fall times Tprr, Tpfr 5 TG - P1H Overlap time Tovr 3 *15: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude. S9972/S9973-1007 S9972/S9973-1008 Typ. 18 36 5000 50 5000 50 500 6 Max. - Unit µs ns ns ns % ns ns % ns ns µs 5 CCD area image sensor S9972/S9973 series ■ Dimensional outlines (unit: mm) S9972-1007 Photosensitive surface 13 1.1 ± 0.3 10.05 ± 0.25 24 2.976 Active area 24.576 1 12 40.64 ± 0.41 1st pin index mark 3.0 ± 0.3 Photosensitive surface 0.46 ± 0.05 2.54 ± 0.13 27.94 ± 0.13 KMPDA0204EB S9972-1008 Photosensitive surface Active area 24.576 1 14.99 ± 0.25 13 6.048 24 1.1 ± 0.3 12 40.64 ± 0.41 1st pin index mark 3.0 ± 0.3 Photosensitive surface 0.51 ± 0.05 2.54 ± 0.13 27.94 ± 0.13 KMPDA0205EB S9973-1007 Active area 24.576 5.0 ± 0.3 12.0 7.1 1 14.99 ± 0.25 2.976 13 4.0 24 3.2 ± 0.4 12 40.64 ± 0.41 58.84 ± 0.13 1st pin index mark 7.65 ± 0.5 Photosensitive surface TE-cooler 0.46 ± 0.05 2.54 ± 0.13 27.94 ± 0.13 6 KMPDA0206EB CCD area image sensor S9972/S9973 series S9973-1008 Window 28.6* Active area 24.576 19.0 22.4 ± 0.3 22.9 ± 0.3 6.7 ± 0.63 7.3 ± 0.63 4.0 5.3 ± 0.15 8.2* 13 6.048 24 1 12 2.54 ± 0.13 44.0 ± 0.44 52.0 1st pin indication pad Photosensitive surface 7.7 ± 0.68 60.0 ± 0.3 1.0 TE-cooler (24×) 0.5 ± 0.05 * Size of window that guarantees the transmittance in the “Spectral transmittance characteristics of window material” graph KMP KMPDA0198EB ■ Pin connections S9972 series S9973 series Remark (standard operation) Symbol Description Symbol Description 1 RG Reset gate RG Reset gate 2 RD Reset drain RD Reset drain +13 V 3 OS Output transistor source OS Output transistor source RL=10 kΩ 4 OD Output transistor drain OD Output transistor drain +20 V 5 OG Output gate OG Output gate 0V Same timing as P2H 6 SG Summing gate SG Summing gate 7 Th1 Thermistor 8 Th2 Thermistor 9 P2H CCD horizontal register clock-2 P2H CCD horizontal register clock-2 10 P1H CCD horizontal register clock-1 P1H CCD horizontal register clock-1 11 IG2H Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2) 0 V 12 IG1H Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1) 0 V 13 ISH Test point (horizontal input source) ISH Test point (horizontal input source) Shorted to RD 14 P2V CCD vertical register clock-2 P2V CCD vertical register clock-2 15 P1V CCD vertical register clock-1 P1V CCD vertical register clock-1 16 TG*16 Transfer gate TG*16 Transfer gate Same timing as P2V 17 18 PTE-cooler19 P+ TE-cooler+ 20 SS Substrate (GND) SS Substrate (GND) GND 21 22 ISV Test point (vertical input source) ISV Test point (vertical input source) Shorted to RD 23 IG2V Test point (vertical input gate-2) IG2V Test point (vertical input gate-2) 0V 24 IG1V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1) 0V *16: TG is an isolation gate between vertical register and horizontal register. In standard operation, the same pulse as P2V should be applied to TG. Pin No. 7 CCD area image sensor S9972/S9973 series ■ Specifications of built-in TE-cooler (Typ.) Parameter Symbol Condition S9973-1007 S9973-1008 Unit Internal resistance Rint Ta=25 °C 6.0 1.2 Ω Maximum current*17 Imax Tc*18=Th*19=25 °C 1.5 3.0 A Maximum voltage Vmax Tc*18=Th*19=25 °C 8.8 3.6 V Maximum heat Qmax 6.7 5.1 W absorption*20 Maximum temperature 70 °C of hot side *17: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *18: Temperature of cool side of thermoelectric cooler *19: Temperature of hot side of thermoelectric cooler *20: This is a heat absorption when the maximum current is supplied to the TE-cooler. ■ TE-cooler characteristics S9973-1007 S9973-1008 (Typ. Ta=25 ˚C) 10 Voltage vs. current CCD temperature vs. current 20 0 4 -10 2 -20 0 0 0.5 1.0 1.5 -30 2.0 5 10 4 0 3 -10 2 -20 1 -30 0 0 1 2 3 4 CCD temperature (˚C) 6 Voltage (V) 10 CCD temperature (˚C) Voltage (V) 30 Voltage vs. current CCD temperature vs. current 6 8 -40 Current (A) Current (A) KMPDB0177EB 8 (Typ. Ta=25 ˚C) 7 20 KMPDB0179EB CCD area image sensor S9972/S9973 series ■ Specifications of built-in temperature sensor A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. 1 MΩ The characteristics of the thermistor used are as follows. R298=10 kΩ B298/323=3450 K Resistance RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2) RT1: Resistance at absolute temperature T1 [K] RT2: Resistance at absolute temperature T2 [K] BT1/T2: B constant [K] 100 kΩ 10 kΩ 220 240 260 280 300 Temperature (K) KMPDB0111EB ■ Precaution for use (Electrostatic countermeasures) ● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in order to prevent electrostatic damage due to electrical charges from friction. ● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. ● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. ● Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. ■ Element cooling/heating temperature gradient rate When using an external cooler, the element cooling/heating temperature gradient rate should be set at less than 5 K/min. Multichannel detector head (C7020-02, C7021-02, C7025-02) Features l C7020-02: for S9972 series C7021-02: for S9973-1007 C7025-02: for S9973-1008 l Area scanning or full line-binnng operation l Readout frequency: 250 kHz l Readout noise: 20 e-rms l ∆T=50 ˚C (∆T changes by radiation method.) TECTOR HE D (C7020, C7021, C7025) Input Supply voltage Master start Master clock Sym bol V D1 V A1+ V A1V A2 V D2 Vp VF φm s φm c Value +5 Vdc, 200 m A +15 Vdc, +100 m A -15 Vdc, -100 m A +24 Vdc, 30 m A +5 Vdc, 30 m A (C7021-02, C7025-02) +5 Vdc, 2.5 A (C7021-02, C7025-02) +12 Vdc, 100 m A (C7021-02, C7025-02) HCMOS logic com patible HCMOS logic com patible, 1 MHz 9 CCD area image sensor S9972/S9973 series Multichannel detector head controller Type no. Interface S7557 SCSI S7557-01 USB2.0 Photo Accessories ·SCSI terminator ·Fuse (2.5 A) ·Detector head connection cable ·AC cable ·Software (compatible OS: Windows 98/ME*21) ·Operation manual ·USB cable ·Fuse (2.5 A) ·Detector head connection cable ·AC cable ·Software (compatible OS: Windows 2000/XP/Vista) ·Operation manual ·MOS adapter Note: SCSI cable and SCSI board (card) are not supplied with the C7557 *21: This software may be run on Windows 2000/NT/XP with a simple task. For information on how to do this, please consult with our sales office. ■ Connection example Shutter* timing pulse AC cable (100 to 240 V; included with the C7557-01) Trig. POWER Dedicated cable (Included with the C7557-01) SIGNAL I/O USB cable (Included with the C7557-01) TE CONTROL I/O Image sensor + Multichannel detector head C7557-01 PC (Windows 2000/XP/Vista) (USB 2.0) * Shutter, etc. are not available. KACCC0402EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2014 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1092E05 Jan. 2014 DN 10