HFA3102 ® Data Sheet July 14, 2005 FN3635.5 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA. • High Gain-Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz Ordering Information PART NUMBER TEMP. RANGE (°C) • High Power Gain-Bandwidth Product. . . . . . . . . . . . 5GHz • High Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . 70 • Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . . . 3.5dB • Low Collector Leakage Current . . . . . . . . . . . . . . <0.01nA • Excellent hFE and VBE Matching PKG. DWG. # PACKAGE HFA3102B96 -40 to 85 14 Ld SOIC Tape and Reel M14.15 HFA3102BZ (Note) -40 to 85 14 Ld SOIC (Pb-free) M14.15 HFA3102BZ96 (Note) -40 to 85 14 Ld SOIC Tape M14.15 and Reel (Pb-free) • Pin-to-Pin to UPA102G • Pb-Free Plus Anneal Available (RoHS Compliant) Applications NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. • Single Balanced Mixers • Wide Band Amplification Stages • Differential Amplifiers • Multipliers • Automatic Gain Control Circuits • Frequency Doublers, Tripplers • Oscillators • Constant Current Sources Pinout/Functional Diagram • Wireless Communication Systems HFA3102 (SOIC) TOP VIEW • Radio and Satellite Communications • Fiber Optic Signal Processing 14 13 Q1 12 11 10 2 Q4 3 8 • High Performance Instrumentation Q6 Q2 Q3 1 9 4 5 1 Q5 6 7 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2003, 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners. HFA3102 Absolute Maximum Ratings TA = 25°C Thermal Information VCEO Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . 8.0V VCBO Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . 12.0V VEBO Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . 12.0V IC , Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Thermal Resistance (Typical, Note 1) θJA (°C/W) SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 Maximum Power Dissipation at 75° Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.25W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C (SOIC - Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to 85°C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25°C TEST CONDITIONS ALL GRADES (NOTE 2) TEST LEVEL MIN TYP MAX UNITS SYMBOLS PARAMETER V(BR)CBO Collector-to-Base Breakdown Voltage (Q1, Q2, Q4, and Q5) IC = 100µA, IE = 0 A 12 18 - V V(BR)CEO Collector-to-Emitter Breakdown Voltage (Q1 thru Q6) IC = 100µA, IB = 0 A 8 12 - V V(BR)EBO Emitter-to-Base Breakdown Voltage (Q3 and Q6) IE = 50µA, IC = 0 A 5.5 6 - V ICBO Collector Cutoff Current (Q1, Q2, Q4, and Q5) VCB = 5V, IE = 0 A - 0.1 10 νΑ IEBO Emitter Cutoff Current (Q3 and Q6) VEB = 1V, IC = 0 A - - 100 νΑ hFE DC Current Gain (Q1 thru Q6) IC = 10mA, VCE = 3V A 40 70 - - CCB Collector-to-Base Capacitance VCB = 5V, f = 1MHz B - 300 - fF CEB Emitter-to-Base Capacitance VEB = 0, f = 1MHz B - 200 - fF fT Current Gain-Bandwidth Product IC = 10mA, VCE = 5V C - 10 - GHz fMAX Power Gain-Bandwidth Product IC = 10mA, VCE = 5V C - 5 - GHz Available Gain at Minimum Noise Figure IC = 3mA, VCE = 3V f = 0.5GHz C - 17.5 - dB f = 1.0GHz C - 12.4 - dB f = 0.5GHz C - 1.8 - dB GNFMIN NFMIN Minimum Noise Figure IC = 3mA, VCE = 3V NF50Ω 50Ω Noise Figure IC = 3mA, VCE = 3V hFE1/hFE2 f = 1.0GHz C - 2.1 - dB f = 0.5GHz C - 3.3 - dB f = 1.0GHz C - 3.5 - dB DC Current Gain Matching (Q1 and Q2, Q4 and Q5) IC = 10mA, VCE = 3V A 0.9 1.0 1.1 - VOS Input Offset Voltage (Q1 and Q2), (Q4 and Q5) IC = 10mA, VCE = 3V A - 1.5 5 mV IOS Input Offset Current (Q1 and Q2), (Q4 and Q5) IC = 10mA, VCE = 3V A - 5 25 µA dVOS/dT Input Offset Voltage TC (Q1 and Q2, Q4 and Q5) IC = 10mA, VCE = 3V C - 0.5 - µV/°C ITRENCH- Collector-to-Collector Leakage (Pin 6, 7, 13, and 14) ∆VTEST = 5V B - 0.01 - nA LEAKAGE NOTE: 2. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only 2 FN3635.5 July 14, 2005 HFA3102 PSPICE Model for a Single Transistor .Model NUHFARRY NPN + ( IS= 1.840E-16 VAF= 7.200E+01 + VAR= 4.500E+00 NE= 1.400E+00 XTI= 3.000E+00 EG= 1.110E+00 BF= 1.036E+02 ISE= 1.686E-19 + IKF= 5.400E-02 ISC= 1.605E-14 XTB= 0.000E+00 BR= 1.000E+01 + NC= 1.800E+00 CJC= 3.980E-13 IKR= 5.400E-02 RC= 1.140E+01 + MJC= 2.400E-01 CJE= 2.400E-13 VJC= 9.700E-01 FC= 5.000E-01 + MJE= 5.100E-01 TF= 10.51E-12 VJE= 8.690E-01 TR= 4.000E-09 + ITF= 3.500E-02 PTF= 0.000E+00 + XCJC= 9.000E-01 MJS= 0.000E+00 + RE= 1.848E+00 KF= 0.000E+00 XTF= 2.300E+00 CJS= 1.689E-13 RB= 5.007E+01 VTF= 3.500E+00 VJS= 9.982E-01 RBM= 1.974E+00 + AF= 1.000E+00) 3 FN3635.5 July 14, 2005 HFA3102 Common Emitter S-Parameters VCE = 5V and IC = 5mA FREQ. (Hz) |S11| PHASE(S11) |S12| PHASE(S12) |S21| PHASE(S21) |S22| PHASE(S22) 1.0E+08 0.833079 -11.7873 1.418901E-02 78.8805 11.0722 168.576 0.976833 -11.0509 2.0E+08 0.791776 -22.8290 2.695740E-02 68.6355 10.5177 157.897 0.930993 -21.3586 3.0E+08 0.734911 -32.6450 3.750029E-02 59.5861 9.75379 148.443 0.868128 -30.4451 4.0E+08 0.672811 -41.0871 4.572138E-02 51.9018 8.91866 140.361 0.799886 -38.1641 5.0E+08 0.612401 -48.2370 5.194147E-02 45.5043 8.10511 133.569 0.734033 -44.5998 6.0E+08 0.557126 -54.2780 5.659943E-02 40.2112 7.35944 127.882 0.674392 -49.9370 7.0E+08 0.508133 -59.4102 6.009507E-02 35.8226 6.69712 123.102 0.622181 -54.3777 8.0E+08 0.465361 -63.8123 6.274213E-02 32.1594 6.11750 119.047 0.577269 -58.1022 9.0E+08 0.428238 -67.6313 6.477134E-02 29.0743 5.61303 115.571 0.538952 -61.2587 1.0E+09 0.396034 -70.9834 6.634791E-02 26.4506 5.17405 112.556 0.506365 -63.9647 1.1E+09 0.368032 -73.9591 6.758932E-02 24.1974 4.79104 109.913 0.478663 -66.3116 1.2E+09 0.343589 -76.6285 6.857937E-02 22.2441 4.45546 107.570 0.455091 -68.3702 1.3E+09 0.322155 -79.0462 6.937837E-02 20.5358 4.15997 105.472 0.435008 -70.1958 1.4E+09 0.303268 -81.2548 7.003020E-02 19.0293 3.89845 103.576 0.417872 -71.8314 1.5E+09 0.286542 -83.2880 7.056718E-02 17.6908 3.66577 101.849 0.403238 -73.3108 1.6E+09 0.271660 -85.1723 7.101343E-02 16.4930 3.45770 100.262 0.390735 -74.6609 1.7E+09 0.258359 -86.9292 7.138717E-02 15.4143 3.27074 98.7956 0.380056 -75.9030 1.8E+09 0.246420 -88.5759 7.170231E-02 14.4370 3.10197 97.4307 0.370947 -77.0544 1.9E+09 0.235659 -90.1265 7.196964E-02 13.5469 2.94897 96.1533 0.363195 -78.1288 2.0E+09 0.225923 -91.5925 7.219757E-02 12.7319 2.80969 94.9515 0.356623 -79.1377 2.1E+09 0.217085 -92.9836 7.239274E-02 11.9824 2.68243 93.8156 0.351081 -80.0903 2.2E+09 0.209034 -94.3076 7.256046E-02 11.2901 2.56573 92.7373 0.346442 -80.9942 2.3E+09 0.201678 -95.5713 7.270498E-02 10.6480 2.45837 91.7097 0.342599 -81.8557 2.4E+09 0.194939 -96.7803 7.282977E-02 10.0503 2.35928 90.7271 0.339458 -82.6802 2.5E+09 0.188747 -97.9395 7.293764E-02 9.49212 2.26756 89.7844 0.336942 -83.4719 2.6E+09 0.183044 -99.0530 7.303093E-02 8.96908 2.18243 88.8775 0.334982 -84.2347 2.7E+09 0.177780 -100.124 7.311157E-02 8.47753 2.10322 88.0026 0.333518 -84.9716 2.8E+09 0.172909 -101.156 7.318117E-02 8.01430 2.02934 87.1565 0.332499 -85.6853 2.9E+09 0.168394 -102.152 7.324107E-02 7.57661 1.96027 86.3366 0.331879 -86.3781 3.0E+09 0.164200 -103.114 7.329243E-02 7.16204 1.89556 85.5404 0.331620 -87.0518 VCE = 5V and IC = 10mA FREQ. (Hz) |S11| PHASE(S11) |S12| PHASE(S12) |S21| PHASE(S21) |S22| PHASE(S22) 1.0E+08 0.728106 -16.4319 1.273920E-02 75.4177 15.1273 165.227 0.959692 -14.2688 2.0E+08 0.670836 -31.2669 2.342300E-02 62.8941 13.9061 152.045 0.886232 -26.9507 3.0E+08 0.600268 -43.7663 3.132521E-02 52.5891 12.3970 141.185 0.796016 -37.3172 4.0E+08 0.531768 -54.0028 3.681579E-02 44.5019 10.9257 132.570 0.708892 -45.4503 5.0E+08 0.471795 -62.3880 4.057046E-02 38.2308 9.62995 125.781 0.633146 -51.7704 6.0E+08 0.421506 -69.3569 4.316292E-02 33.3405 8.53559 120.378 0.570209 -56.7206 7.0E+08 0.379961 -75.2612 4.499071E-02 29.4764 7.62375 116.005 0.518803 -60.6598 8.0E+08 0.345693 -80.3608 4.631140E-02 26.3755 6.86423 112.398 0.476987 -63.8540 4 FN3635.5 July 14, 2005 HFA3102 VCE = 5V and IC = 10mA (Continued) FREQ. (Hz) |S11| PHASE(S11) |S12| PHASE(S12) |S21| PHASE(S21) |S22| PHASE(S22) 1.0E+08 0.728106 -16.4319 1.273920E-02 75.4177 15.1273 165.227 0.959692 -14.2688 9.0E+08 0.317301 -84.8420 4.728948E-02 23.8481 6.22797 109.365 0.442915 -66.4948 1.0E+09 0.293608 -88.8381 4.803091E-02 21.7581 5.69057 106.771 0.415044 -68.7193 1.1E+09 0.273680 -92.4452 4.860515E-02 20.0070 5.23257 104.518 0.392146 -70.6269 1.2E+09 0.256782 -95.7336 4.905871E-02 18.5224 4.83873 102.532 0.373261 -72.2899 1.3E+09 0.242344 -98.7555 4.942344E-02 17.2505 4.49716 100.759 0.357640 -73.7620 1.4E+09 0.229918 -101.551 4.972158E-02 16.1506 4.19854 99.1602 0.344698 -75.0832 1.5E+09 0.219152 -104.150 4.996903E-02 15.1915 3.93554 97.7028 0.333974 -76.2840 1.6E+09 0.209767 -106.577 5.017730E-02 14.3490 3.70234 96.3629 0.325102 -77.3877 1.7E+09 0.201539 -108.851 5.035491E-02 13.6040 3.49428 95.1215 0.317789 -78.4122 1.8E+09 0.194288 -110.988 5.050825E-02 12.9411 3.30758 93.9633 0.311800 -79.3715 1.9E+09 0.187867 -113.001 5.064218E-02 12.3482 3.13919 92.8761 0.306940 -80.2768 2.0E+09 0.182157 -114.902 5.076045E-02 11.8151 2.98658 91.8500 0.303051 -81.1365 2.1E+09 0.177056 -116.698 5.086598E-02 11.3338 2.84766 90.8766 0.300003 -81.9578 2.2E+09 0.172484 -118.399 5.096107E-02 10.8974 2.72068 89.9494 0.297686 -82.7460 2.3E+09 0.168370 -120.012 5.104755E-02 10.5001 2.60420 89.0626 0.296007 -83.5057 2.4E+09 0.164656 -121.542 5.112690E-02 10.1373 2.49697 88.2115 0.294889 -84.2405 2.5E+09 0.161293 -122.996 5.120031E-02 9.80479 2.39793 87.3920 0.294266 -84.9533 2.6E+09 0.158239 -124.378 5.126876E-02 9.49919 2.30619 86.6007 0.294081 -85.6466 2.7E+09 0.155458 -125.694 5.133304E-02 9.21750 2.22098 85.8348 0.294285 -86.3223 2.8E+09 0.152919 -126.947 5.139381E-02 8.95716 2.14162 85.0916 0.294836 -86.9822 2.9E+09 0.150595 -128.140 5.145164E-02 8.71595 2.06753 84.3690 0.295696 -87.6275 3.0E+09 0.148463 -129.279 5.150697E-02 8.49194 1.99820 83.6651 0.296834 -88.2595 Typical Performance Curves 140 12 IB = 150µA 120 10 IB = 120µA 100 IB = 90µA hFE IC (mA) 8 6 IB = 60µA 4 60 40 IB = 30µA 2 0 80 20 0 1 2 3 VCE (V) FIGURE 1. IC vs VCE 5 4 5 0 10-10 10-8 10-6 10-4 IC (A) 10-2 100 FIGURE 2. hFE vs IC FN3635.5 July 14, 2005 HFA3102 Typical Performance Curves (Continued) 100 12 VCE = 5V 10-2 10 10-4 8 fT (GHz) IC AND IB (A) VCE = 3V 10-6 10-8 6 4 10-10 2 10-12 0.4 0.6 VBE (V) 0.8 0 10-4 1.0 20 4.6 18 4.4 16 4.2 14 4.0 12 3.8 10 3.6 8 3.4 6 3.2 4 0.5 1.0 1.5 2.0 2.5 40 3.0 FREQUENCY (GHz) FIGURE 5. GAIN AND NOISE FIGURE vs FREQUENCY 6 POUT, OUTPUT POWER (dBm) 4.8 0 IC (A) 10-2 10-1 FIGURE 4. fT vs IC |S21| (dB) NOISE FIGURE (dB) FIGURE 3. GUMMEL PLOT 10-3 20 3rd ORDER INTERCEPT POINT 1dB COMPRESSION POINT 0 -20 -40 -60 -80 -100 -30 VCE = 5V IC = 10mA f = 1GHz 3RD ORDER PRODUCTS -20 -10 0 PIN , INPUT POWER (dBm) 10 FIGURE 6. P1dB AND 3RD ORDER INTERCEPT FN3635.5 July 14, 2005 HFA3102 Die Characteristics METALLIZATION: Type: Metal 1: AlCu(2%)/TiW Thickness: Metal 1: 8kÅ ±0.5kÅ Type: Metal 2: AlCu(2%) Thickness: Metal 2: 16kÅ ±0.8kÅ PROCESS: UHF-1 DIE DIMENSIONS: 53 mils x 52 mils x 14 mils 1340µm x 1320µm x 355.6µm PASSIVATION: Type: Nitride Thickness: 4kÅ ±0.5kÅ SUBSTRATE POTENTIAL (POWERED UP): Floating Metallization Mask Layout HFA3102 TOP VIEW 2 1 14 13 12 3 11 1340µm (53 mils) 4 10 5 6 7 8 9 1320µm (52 mils) Pad numbers correspond to the 14 pin SOIC pinout. 7 FN3635.5 July 14, 2005 HFA3102 Small Outline Plastic Packages (SOIC) M14.15 (JEDEC MS-012-AB ISSUE C) N INDEX AREA H 0.25(0.010) M 14 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE B M E INCHES -B- 1 2 3 L SEATING PLANE -A- h x 45o A D -C- e α A1 B 0.25(0.010) M C A M SYMBOL MIN MAX MIN MAX NOTES A 0.0532 0.0688 1.35 1.75 - A1 0.0040 0.0098 0.10 0.25 - B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 - D 0.3367 0.3444 8.55 8.75 3 E 0.1497 0.1574 3.80 4.00 4 e C 0.10(0.004) B S 0.050 BSC 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 1.27 BSC - H 0.2284 0.2440 5.80 6.20 - h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 N NOTES: MILLIMETERS α 14 0o 14 8o 0o 7 8o Rev. 0 12/93 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 8 FN3635.5 July 14, 2005