Data Sheet

')
1
'
BC69PAS series
20 V, 2 A PNP medium power transistors
Rev. 1 — 19 June 2015
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small
Surface-Mounted Device (SMD) plastic package with medium power capability and visible
and solderable side pads.
NPN complement: BC68PAS series
1.2 Features and benefits
 High collector current capability
 Three current gain selections
IC and ICM
 Reduced Printed-Circuit Board (PCB)
 Leadless very small SMD plastic
area requirements
package with medium power capability
 Exposed heat sink for excellent thermal  Suitable for Automatic Optical
and electrical conductivity
Inspection (AOI) of solder joint
 AEC-Q101 qualified
1.3 Applications
 Linear voltage regulators
 Battery driven devices
 MOSFET drivers
 High-side switches
 Power management
 Amplifiers
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C unless otherwise specified
Symbol
Parameter
VCEO
Min
Typ
Max Unit
collector-emitter voltage open base
-
-
20
V
IC
collector current
-
-
2
A
ICM
peak collector current
single pulse; tp  1 ms
-
-
3
A
DC current gain
VCE = 1 V; IC = 500 mA
[1]
85
-
375
hFE selection -16
VCE = 1 V; IC = 500 mA
[1]
100
-
250
hFE selection -25
VCE = 1 V; IC = 500 mA
[1]
160
-
375
hFE
[1]
Pulse test: tp  300 ms;   0.02.
Conditions
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
2. Pinning information
Table 2.
Pinning
Pin
Description
1
base
2
emitter
3
collector
Simplified outline
Graphic symbol
V\P
7UDQVSDUHQWWRSYLHZ
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
BC69PAS
BC69-16PAS
BC69-25PAS
Description
Version
DFN2020D-3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body
2  2  0.65 mm.
SOT1061D
4. Marking
Table 4.
Marking codes
Type number
Marking code
BC69PAS
C1
BC69-16PAS
C2
BC69-25PAS
C3
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
BC69PAS_SER
Product data sheet
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
VCEO
collector-base voltage
open emitter
-
32
V
collector-emitter voltage
open base
-
20
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
2
A
ICM
peak collector current
-
3
A
IB
base current
-
0.4
A
single pulse;
tp  1 ms
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
2 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Ptot
Parameter
Conditions
total power dissipation
Tamb  25 C
Min
Max
Unit
[1]
-
420
mW
[2]
-
830
mW
[3]
-
1.1
W
[4]
-
810
mW
[5]
-
1.65
W
Tj
junction temperature
-
150
C
Tamb
ambient temperature
55
150
C
Tstg
storage temperature
65
150
C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
[4]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2.
DDF
3WRW
:
7DPEƒ&
(1) FR4 PCB, 4-layer copper, 1 cm2
(2) FR4 PCB, single-sided copper, 6 cm2
(3) FR4 PCB, single-sided copper, 1 cm2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 1.
BC69PAS_SER
Product data sheet
Power derating curves
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Rev. 1 — 19 June 2015
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BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from junction to ambient
Rth(j-a)
in free air
thermal resistance from junction to solder point
Rth(j-sp)
Max
Unit
[1]
298
K/W
[2]
151
K/W
[3]
114
K/W
[4]
154
K/W
[5]
76
K/W
20
K/W
in free air
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
[4]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2
DDF
=WKMD
.:
GXW\F\FOH WSV
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC69PAS_SER
Product data sheet
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Rev. 1 — 19 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac684
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
1
0.01
0
10–1
10–5
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
006aac685
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
102
0.1
10
1
0
10–1
10–5
0.05
0.02
0.01
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC69PAS_SER
Product data sheet
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Rev. 1 — 19 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac686
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.25
0.33
0.2
0.1
10
0.05
0.02
1
0
10–1
10–5
0.01
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, 4-layer copper, tin-plated and standard footprint
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
006aac687
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.25
10
0.1
1
0
10–1
10–5
0.33
0.2
0.05
0.02
0.01
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2
Fig 6.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC69PAS_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
7. Characteristics
Table 7.
Characteristics
Tamb = 25 C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off current
VCB = 25 V; IE = 0 A
-
-
100
nA
VCB = 25 V; IE = 0 A; Tj = 150 C
-
-
10
A
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 10 V; IC = 5 mA
50
-
-
VCE = 1 V; IC = 500 mA
[1]
85
-
375
VCE = 1 V; IC = 1 A
[1]
60
-
-
VCE = 1 V; IC = 2 A
[1]
40
-
-
hFE selection-16
VCE = 1 V; IC = 500 mA
[1]
100
-
250
hFE selection-25
VCE = 1 V; IC = 500 mA
[1]
160
-
375
IC = 1 A; IB = 100 mA
[1]
-
-
0.5
V
IC = 2 A; IB = 200 mA
[1]
-
-
0.6
V
IC = 5 mA; VCE = 10 V
[1]
-
-
0.7
V
IC = 1 A; VCE = 1 V
[1]
-
-
1
V
collector-emitter saturation
voltage
VCEsat
base-emitter voltage
VBE
fT
transition frequency
VCE = 5 V; IC = 50 mA; f = 100 MHz
40
140
-
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
-
28
-
pF
[1]
Pulse test: tp  300 ms;   0.02
006aac697
300
hFE
006aab403
−2.4
IC
(A)
−2.0
(1)
IB (mA) = −18.0
−14.4
−1.6
200
(2)
−10.8
−1.2
−16.2
−12.6
−9.0
−7.2
100
−5.4
−0.8
(3)
−3.6
−0.4
0
-10-4
-10-3
-10-2
-10-1
−1.8
0
-1
-10
0
IC (A)
VCE = 1 V
−1
−2
−3
−4
VCE (V)
−5
Tamb = 25 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 7.
hFE selection -16: DC current gain as a
function of collector current; typical values
BC69PAS_SER
Product data sheet
Fig 8.
hFE selection -16: Collector current as a
function of collector-emitter voltage; typical
values
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Rev. 1 — 19 June 2015
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7 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac698
-1.2
006aac699
-1
VCEsat
(V)
VBE
(V)
(1)
-10-1
-0.8
(1)
(2)
(2)
(3)
-10-2
-0.4
0.0
-10-1
-1
-10
-102
-103
-104
IC (mA)
(3)
-10-3
-10-1
VCE = 1 V
-1
(1) Tamb = 100 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 55 C
hFE selection -16: Base-emitter voltage as a
function of collector current; typical values
006aac707
400
-103
-104
IC (mA)
Fig 10. hFE selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aab404
−2.4
IC
(A)
(1)
hFE
-102
IC/IB = 10
(1) Tamb = 55 C
Fig 9.
-10
IB (mA) = −12.0
−2.0
−10.8
300
(2)
−9.6
−1.6
−7.2
−1.2
200
−8.4
−6.0
−4.8
(3)
−3.6
−0.8
−2.4
100
−0.4
0
-10-4
-10-3
-10-2
-10-1
−1.2
0
-1
-10
0
IC (A)
VCE = 1 V
−1
−2
−3
−4
VCE (V)
−5
Tamb = 25 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 11. hFE selection -25: DC current gain as a
function of collector current; typical values
BC69PAS_SER
Product data sheet
Fig 12. hFE selection -25: Collector current as a
function of collector-emitter voltage; typical
values
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Rev. 1 — 19 June 2015
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8 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac708
-1.2
aaa-018434
-1
VCEsat
(V)
VBE
(V)
(1)
-10-1
-0.8
(2)
(3)
(1)
(3)
-10-2
-0.4
(2)
0.0
-10-1
-1
-10
-102
-103
-104
IC (mA)
VCE = 1 V
-10-3
-10-1
-1
-10
-102
-103
-104
IC (mA)
IC/IB = 10
(1) Tamb = 55 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 55 C
Fig 13. hFE selection -25: Base-emitter voltage as a
function of collector current; typical values
Fig 14. hFE selection -25: Collector-emitter saturation
voltage as a function of collector current;
typical values
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BC69PAS_SER
Product data sheet
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Rev. 1 — 19 June 2015
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BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
9. Package outline
1.3
1
0.04
max
2
1.1
0.9
0.3
0.2
0.65
max
0.45
0.35
0.35
0.25
2.1
1.9
3
1.6
1.4
2.1
1.9
Dimensions in mm
14-03-18
Fig 15. Package outline DFN2020D-3 (SOT1061D)
BC69PAS_SER
Product data sheet
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Rev. 1 — 19 June 2015
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BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
10. Soldering
Footprint information for reflow soldering of DFN2020D-3 package
SOT1061D
2.1
1.7
1.3
0.4 (2x)
0.5 (2x)
0.3 (2x)
0.5 (2x) 0.6 (2x) 0.7 (2x)
0.25
1.1
0.35
2.5
0.3
0.25
2.3
0.25
1
0.35
1.1
0.35
1.2
0.35
0.3
0.4
0.5
1.5
1.6
1.7
occupied area
solder resist
solder lands
solder paste
Dimensions in mm
Issue date
14-03-05
14-03-12
sot1061d_fr
Fig 16. Reflow soldering footprint DFN2020D-3 (SOT1061D)
BC69PAS_SER
Product data sheet
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Rev. 1 — 19 June 2015
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BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BC69PAS_SER v.1
20150619
Product data sheet
-
-
BC69PAS_SER
Product data sheet
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Rev. 1 — 19 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
12 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BC69PAS_SER
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
13 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.4 Trademarks
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BC69PAS_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
14 of 15
NXP Semiconductors
BC69PAS series
20 V, 2 A PNP medium power transistors
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 19 June 2015
Document identifier: BC69PAS_SER
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