Complex transistor portfolio - simplify circuit design

Simplify circuit design,
save system costs
Choose from NXP’s broad complex transistor portfolio:
Low VCEsat load switches, differential amplifiers, comparators,
MOSFET driver, current mirror, matched pair transistors
NXP supports a wide range of applications with a best-in-class selection of current mirrors,
matched pair transistors, differential amplifiers, MOSFET drivers, low VCEsat load switches,
comparators, and constant current sources.
Key benefits
 L ower placement cost
 L ess required board space
R
educed component count
R
educed system cost by avoiding circuit trimming
or additional circuitry
B
etter electrical performance
T
hermal coupling
O
ptimal matching of parameters
A
utomotive qualified according to AEC-Q101
Key applications
 Loadswitch, high-side switch, supply line switch
 Current mirror
 Differential amplifier
 Comparator
 MOSFET driver
Matched pair transistors
SOT457
(SC-74)
SOT363
(SC-88)
SOT666
Size (mm)
2.9 x 1.5 x 1.0
2.0 x 1.25 x 0.95
1.6 x 1.2 x 0.55
Ptot (mW)
380
300
300
BCM847DS
BCM847BS
BCM847BV
Package
Polarity
VCEO (V)
IC (mA)
hFE min
hFE max
NPN
hFE1/hFE2
VBE1 - VBE2 (mV)
0.9
2
0.95
2
PMP4501Y
PMP4501V
0.98
2
PMP4201Y
PMP4201V
0.9
2
BCM857BS
BCM857BV
0.95
2
PMP5501Y
PMP5501V
0.98
2
PMP5201Y
PMP5201V
0.9
2
Configuration
45
100
PNP
65
200
450
BCM857DS
BCM856DS
BCM856BS
When standard double transistors don’t meet the matching requirements of an application, these devices are ideal drop-in replacements.
Key features and benefits
h
FE matching: hFE1/hFE2 = 2, 5, or 10%
 VBE matching: VBE1 – VBE2 = 2 mV
G
ood thermal coupling of the two transistors in one package
ensures a stable matching vs temperature
 Choice of standard double transistor pinout or applicationoptimized pinout
 Small, very small, and ultra-small packages
Current mirror
SOT143B
Iin
Package
Size (mm)
2.9 x 1.3 x 1.0
Ptot (mW)
250
Configuration
Q1
Polarity VCEO (V) IC (mA) hFE min hFE max hFE1/hFE2
NPN
PNP
30
110
800
0.7
BCV61/A/B/C
45
200
450
0.9
BCM61B
100
800
0.7
BCV62/A/B/C
200
450
0.9
BCM62B
30
45
100
Iout
V
Q2
bra129
aaa-000882
bra126
Key features and benefits
C
urrent gain matching better than 10%
T
hermal coupling
Key applications
C
urrent Controlled Current Source (CCCS)
B
ias current generation
A
ctive load
C
urrent translation
With a current mirror, the current provided to an active
component controls current to a second component. The
device delivers a copy of the input current as output current.
There is a constant factor between the input and output current,
and this factor is independent of the output load. The simplest
configuration consists of two transistors.
Iin = Iout ( 1 + 2/beta), with beta >> 2,
Iin is equal Iout.
For higher precision, the parameters of the two transistors
need to be properly matched (VBE, beta). Integrating the two
transistors into a single package ensures close thermal coupling
and identical behavior of the two bipolar transistors versus
temperature.
Current monitor for DC/DC converter, lamps,
and motor control
Battery charger high side current sensing
R1
Current
R2
Q1
Q2
Q3
Q4
Vsense
R3
R4
aaa-000878
Current through the LED is VF independent, resulting in
a constant LED brightness
Two matched pair transistors provide a constant,
VF independent current through an RGB-LED
VCC
VCC
R1
Q1
D1
D2
D3
Q2
Q1
R1
Q2
Q3
Q4
D1
aaa-000880
aaa-000881
Differential amplifier
SOT353
Package
Size (mm)
2.0 x 1.25 x 0.95
Ptot (mW)
300
Polarity
VCEO (V)
IC (mA)
hFE min
hFE max
hFE1/hFE2
VBE1 - VBE2 (mV)
0.95
2
PMP4501G
0.98
2
PMP4201G
0.95
2
PMP5501G
0.98
2
PMP5201G
Configuration
NPN
45
100
200
450
PNP
Key features and benefits
T
hermal coupling
C
urrent gain matching (2 or 5%)
B
ase-emitter voltage matching to 2 mV
C
ommon-emitter configuration for 5-pin type
These devices amplify the voltage difference between
two inputs, independent of the particular voltage at the inputs.
R1
Key applications
A
mplification of very small signals in automotive, consumer,
computing, and industrial
S
ensors
M
icrophone preamplifiers
A
nalog filters (audio, video, feedback control systems)
Differential amplifier with additional current source replacing
the collector resistors (3 complex discretes). Doubles the
single-ended gain (no gain loss) compared to a differential
output.
Vout
Vin+
Q1
Q1
V
aaa-000883
Differential amplifier with current source in the emitter path
using two complex discrete parts. The sum of IC 1 and IC 2 is
kept constant, and there is good common mode rejection
(single ended output).
R1
R2
R3
Q2
Vout
Vout
Vin+
Vin-
Q2
RE
Current mirror
R1
R2
Q3
Q4
Differential amplifier
Vin-
V
Vin+
Q1
Q2
Vin-
V
Current mirror
Q5
Q3
Q6
aaa-000885
Q4
aaa-000884
Comparator
Differential amplifier configured as a comparator with push-pull output stage. The levels of two input signals are compared and
the output delivers only two states (works in a non-linear mode).
Below an application example which requires four complex discretes and one bipolar transistor. This circuit can be used for
two-step control, analog-to-digital-converter (ADC), and any limit indicators.
Iin
Iout
Q1
V
Q2
aaa-000882
MOSFET driver transistors (push-pull stage)
VCEO
(V)
IC
(mA)
Icm
[A]
Type
Package
Remark
Op-amp booster
Configuration
V+
SOT143B
30
0.1
0.2
BCV65
General purpose transistors
Q1
2
0.6
1
PMD2001D
1
2
PMD3001D
SOT457D
Switching transistors with
reduced storage time
40
Low VCEsat
Key features and benefits
T
hree different configurations
T
ypes available with standard, switching, and low VCEsat (BISS)
transistors
S
mall footprint
Key applications
P
ower management
- (Half) bridge push-pull driver
- Isolated DC/DC converters
- Secondary synchronous rectification
P
eripheral driver
- (Half) bridge push-pull driver
- Motor driver
- Brushless DC motor driver
- Operational amplifier (Op-amp) output current booster
6
R1
output
3
Q2
C1
V-
aaa-000887
MOSFET driver: Faster switching, lower losses
10 V
Q1
B
Q3
Q2
aaa-000888
Low VCEsat (BISS) load switches
SOT96
(SO8)
SOT457
(SC-74)
SOT363
(SC-88)
SOT666
2.0 x 1.25 x 0.95
1.6 x 1.2 x 0.55
Package
M3D315
Size (mm)
4.9 x 3.9 x 1.75
Ptot (mW)
1500
1
2.9 x 1.5 x 1.0
750
1)
6
8
5
R1
R2
VCEO
(V)
IC
(A)
VCEsat max (mV); IC = 0.5 A;
IB = 0.05 A
R1, R2
(kΩ)
2
3
1
TR1
7
TR1
1
5
3
0.5
5
R1
2
006aab506
1
2
1
1)
2)
R2
TR2
TR1
1
3
sym036
2)
4
2
3
sym036
2.2
PBLS1501Y
PBLS1501V
4.7
PBLS1502Y
PBLS1502V
10
PBLS1503Y
PBLS1503V
22
PBLS1504Y
PBLS1504V
2.2
PBLS2001D
4.7
PBLS2002D
10
PBLS2003D
22
PBLS2004D
150
2.2
PBLS2021D
4.7
PBLS2022D
10
PBLS2023D
22
PBLS2024D
70
75
350
170
180
60
1.5
5
R1
2.2
PBLS2001S
4.7
PBLS2002S
10
PBLS2003S
2.2
PBLS4001Y
PBLS4001V
4.7
PBLS4002Y
PBLS4002V
10
PBLS4003Y
PBLS4003V
22
PBLS4004Y
PBLS4004V
47
PBLS4005Y
PBLS4005V
40
1
6
4
TR2
TR1
3
300
2)
R2
TR2
6
300
1)
250
20
1.8
6
R2
TR2
006aaa813
0.5
4
R1
4
15
600
1)
2.2
PBLS4001D
4.7
PBLS4002D
10
PBLS4003D
22
PBLS4004D
47
PBLS4005D
2.2
PBLS6001D
4.7
PBLS6002D
10
PBLS6003D
22
PBLS6004D
47
PBLS6005D
2.2
PBLS6021D
4.7
PBLS6022D
10
PBLS6023D
22
PBLS6024D
100
Device mounted on a ceramic PCB, Al2O3, standard footprint
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint
Key features and benefits
V
ery small input current drives high load current
H
igh efficiency and low voltage drop due to low
VCEsat (BISS) pass transistor
R
eplaces expensive P-MOSFETs
 Inherent reverse current blocking
 Automotive qualified according to AEC-Q101
Low VCEsat (BISS) load switch – the optimal choice for
supply-line and high-side switches
PNP BISS transistor
Power
supply
BISS load switch
PBLS... series
Control
input
Key applications
 Fan driver
 Battery charge switch
 Supply line switch
 High side load
Resistor-equipped
transistor (RET)
Constant current source
SOT353 (SC-88A)
Package
Size (mm)
2.0 x 1.25 x 0.95
Ptot (mW)
335
Type
PSSI2021SAY
Description
maximum
supply voltage
maximum
supply current
typical stabilized
output current
minimum stabilized
output current
maximum stabilized
output current
typical load stability
of stabilized output
current
Parameter
VS max (V)
IS max (mA)
Iout typ (µA)
Iout min (mA)
Iout max (mA)
∆Iout/Iout typ (%)
@ VS = 12 V;
Iout = 15 µA;
Vout = 1 V to 10 V
@ VS = 12 V;
Vout = 1 V to 10 V;
Rext = open
2.2
15
Condition
Value
75
Key features and benefits
} Single-chip constant current source with reduced
component count
} Output current set by an external resistor
} Very small footprint package for smaller designs
Key applications
} Constant current LED driver
} Generic constant current source
} Active bias control for audio amplifiers
0.015
Voltage reference
50
typical output current
change over ambient
temperature
∆Iout/(Iout*∆Tamb)
typ (%/K)
@ VS = 12 V;
Vout = 1 V to 10 V
@ VS = 12 V;
Vout = 1 V;
Tamb = -55 °C to 150 °C
0.5
0.15
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© 2012 NXP Semiconductors N.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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patent- or other industrial or intellectual property rights.
Date of release: March 2012
Document order number: 9397 750 17182
Printed in the Netherlands
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