SiHP21N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PPRODUCT SUMMARY VDS (V) at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 106 Qgs (nC) 14 Qgd (nC) 33 Configuration Single D TO-220AB APPLICATIONS • Telecommunications - Server and telecom power supplies • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Consumer and computing - ATX power supplies • Industrial - Welding - Battery chargers • Renewable energy - Solar (PV inverters) • Switch mode power supplies (SMPS) • Applications using the following topologies - LCC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge G G D S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB Lead (Pb)-free and Halogen-free SiHP21N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID UNIT V 21 13 A IDM 53 1.7 W/°C Single Pulse Avalanche Energy b EAS 367 mJ Maximum Power Dissipation PD 208 W TJ, Tstg -55 to +150 °C Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dt d Soldering Recommendations (Peak Temperature) c for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A. c. 1.6 mm from case. d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S15-2687-Rev. C, 16-Nov-15 dV/dt 37 31 300 V/ns °C Document Number: 91550 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP21N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Case (Drain) RthJC - 0.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 650 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.67 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 520 V, VGS = 0 V - - 1 VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 500 Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS μA - 0.15 0.18 gfs VDS = 30 V, ID = 11 A - 7.0 - S Input Capacitance Ciss 2322 - Coss - 105 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output Capacitance - 4 - Effective Output Capacitance, Energy Related a Co(er) - 84 - Effective Output Capacitance, Time Related b Co(tr) - 293 - - 71 106 - 14 - Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = 10 V ID = 11 A Dynamic pF VDS = 0 V to 520 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs VGS = 10 V ID = 11 A, VDS = 520 V Gate-Drain Charge Qgd - 33 - Turn-On Delay Time td(on) - 22 44 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg nC VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 - 34 68 - 68 102 - 42 84 f = 1 MHz, open drain - 0.78 - - - 21 - - 53 - 0.9 1.2 V - 160 - ns - 1.2 - μC - 14 - A ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 11 A, VGS = 0 V TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S15-2687-Rev. C, 16-Nov-15 Document Number: 91550 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP21N65EF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 40 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V 5V 3 TJ = 25 °C ID = 11 A RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 60 30 20 10 2.5 2 1.5 0.5 0 0 5 20 25 0 - 60 - 40 - 20 0 30 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 10 000 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V 5V 30 15 TJ = 150 °C Ciss ġ Capacitance (pF) ID, Drain-to-Source Current (A) 40 10 VGS = 10 V 1 20 10 1000 Coss 100 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd ġ ġ Crss 10 0 ġ ġ 1 0 10 5 20 15 25 30 0 VDS, Drain-to-Source Voltage (V) 100 200 300 400 500 600 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 14 5000 12 50 10 30 TJ = 150 °C Coss 8 Eoss 500 6 Eoss (μJ) 40 Coss (pF) ID, Drain-to-Source Current (A) 60 20 4 TJ = 25 °C 10 2 VDS = 29.6 V 0 0 5 10 15 20 25 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-2687-Rev. C, 16-Nov-15 50 0 0 100 200 300 VDS 400 500 600 Fig. 6 - Coss and Eoss vs. VDS Document Number: 91550 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP21N65EF www.vishay.com Vishay Siliconix 25 VDS = 520 V VDS = 325 V VDS = 130 V 20 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 24 16 12 8 4 0 20 15 10 5 0 0 30 60 90 120 150 25 Qg, Total Gate Charge (nC) 50 75 100 125 150 TJ, Case Temperature (°C) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature 850 100 ID = 10 mA VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 825 TJ = 150 °C TJ = 25 °C 10 1 800 775 750 725 700 675 VGS = 0 V 650 - 60 - 40 - 20 0 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source-Drain Voltage (V) Fig. 8 - Typical Source-Drain Diode Forward Voltage 100 ID, Drain Current (A) 100 μs Limited by RDS(on)* 1 ms Operation in this Area Limited by RDS(on) 10 ms 0.1 TC = 25 °C TJ = 150 °C Single Pulse 0.01 1 Fig. 11 - Temperature vs. Drain-to-Source Voltage IDM Limited 10 1 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) BVDSS Limited 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S15-2687-Rev. C, 16-Nov-15 Document Number: 91550 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP21N65EF www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS QG 10 V 90 % QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 17 - Basic Gate Charge Waveform Fig. 14 - Switching Time Waveforms Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ D.U.T RG 12 V + - IAS 0.2 µF 0.3 µF V DD + D.U.T. - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S15-2687-Rev. C, 16-Nov-15 Document Number: 91550 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP21N65EF www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91550. S15-2687-Rev. C, 16-Nov-15 Document Number: 91550 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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