Photo IC diode S11154-201CT Reduced color temperature errors The S11154-201CT is a photo IC diode with spectral response characteristics that closely resemble human eye sensitivity. Two active areas are formed on the same chip, and the outputs of the two active areas are subtracted from each other by the current amplifier circuit, in order to have sensitivity almost only in the visible range and reduce the color temperature errors. Features Applications Spectral response close to human eye sensitivity Energy-saving sensor for large-screen TVs, etc. Reduced color temperature error Various types of light level measurement Lower output-current variation compared with phototransistors Excellent linearity Low output deviation by different color temperature light source Suitable for lead-free reflow (RoHS compliance) Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Photocurrent Forward current Power dissipation*1 Operating temperature Storage temperature Reflow soldering conditions*3 Symbol VR IL IF P Topr Tstg Tsol Condition No dew condensation*2 No dew condensation*2 Specification -0.5 to +12 5 5 150 -30 to +80 -40 to +85 Peak temperature 260 °C max., two times (see P.7) Unit V mA mA mW °C °C - *1: Power dissipation decreases at a rate of 2 mW/°C above Ta=25 °C. *2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *3: JEDEC level 3 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Dark current Photocurrent time*4 Rise Fall time*4 Symbol λ λp ID IL tr tf Condition VR=5 V VR=5 V, 2856 K 100 lx 10 to 90 %, VR=7.5 V RL=10 kΩ, λ=560 nm Min. - Typ. 480 to 640 580 1.0 Max. 50 Unit nm nm nA 70 - 150 μA - 6.0 2.5 - ms ms www.hamamatsu.com 1 Photo IC diode S11154-201CT *4 Rise/fall time measurement method Pulsed light from LED (λ=560 nm) 2.5 V 90 % VO 10 % 0.1 μF tr 7.5 V tf VO Load resistance RL KPICC0041EA Photocurrent vs. illuminance Spectral response (Typ. Ta=25 °C, VR=5 V) 100 1 mA Photocurrent Relative sensitivity (%) 80 60 40 S11154-201CT Human eye sensitivity 20 0 200 (Typ. Ta=25 °C, VR=5 V, 2856 K) 10 mA 400 600 800 1000 100 μA 10 μA 1 μA 1200 100 nA 0.1 1 10 100 1000 10000 Illuminance (lx) Wavelength (nm) KPICB0129EB KPICB0141EC 2 Photo IC diode S11154-201CT Color temperature error (difference between various light sources) 1.6 (Normalized to "A light source" at 2856 K and 100 lx) 1.4 Relative output* 1.2 1.0 0.8 0.6 0.4 0.2 0.0 2800 K 2856 K 3000 K 5000 K 7200 K 2800 K: Silica bulb 2856 K: A light source 3000 K: Fluorescent light bulb 5000 K: Fluorescent light bulb 7200 K: Fluorescent light bulb * At 2856 K normalized to 100 KPICB0140EC Photocurrent vs. ambient temperature Rise/fall times vs. load resistance 1000 (Typ. Ta=25 °C, VR=7.5 V, white LED, Vo=2.5 V) (Typ. VR=5 V, 2856 K, Io=0.1 mA) 180 Photocurrent (relative value)* 160 Rise/fall times (ms) 100 tr 10 tf 1 140 120 100 80 60 40 20 0.1 100 1k 10 k 100 k 1M 0 -25 0 25 50 75 100 Ambient temperature (°C) Load resistance (Ω) KPICB0143EA *At Ta=25 °C normaolized to 100. KPICB0144EA 3 Photo IC diode S11154-201CT Directivity Dark current vs. ambient temperature (Typ. Ta=25 °C, VR=5 V) 1 μA (Typ. Ta=25 °C, tungsten lamp) 20° 30° 100 nA 40° 10° 0° 10° 20° 100 30° 40° 80 Dark current 50° 50° 60 60° 60° 10 nA 40 70° 20 80° 90° 100 80 1 nA 70° 80° 0 60 40 20 0 20 40 60 90° 80 100 Relative sensitivity (%) 100 pA KPICB0145EA 10 pA 0 25 50 75 100 Ambient temperature (°C) KPICB0146EA Block diagram Photodiode for signal detection Photodiode for signal offset Cathode Internal protection resistance (approx. 150 Ω) The drawing surrounded by the dotted line shows a schematic diagram of the photo IC. Reverse bias power supply Current amp (approx. 30000 times) Anode CL Vout RL KPICC0132EA The photo IC diode must be reverse-biased so that a positive potential is applied to the cathode. To eliminate high-frequency components, we recommend placing a load capacitance CL in parallel with load resistance RL as a low-pass filter. Cut-off frequency fc 1 2π CL RL 4 Photo IC diode S11154-201CT Dimensional outline (unit: mm) 2.0 1.4 1.0 1.0 1.0 1.25 1.5 (0.25) Photosensitive area 0.32 × 0.46 Recommended land pattern 0.4 0.8 Index mark 0.4 0.4 Cathode Anode Tolerance unless otherwise noted: ±0.2 Values in parentheses indicate reference value. Electrode Standard packing: reel (3000 pcs/reel) KPICA0072EB Standard packing specifications Reel (conforms to JEITA ET-7200) Dimensions 178 mm Hub diameter 60 mm Tape width 8 mm Material PS Electrostatic characteristic Conductive Embossed tape (unit: mm, material: PS, conductive) 2.00 4.00 0.23 8.00 5.25 1.75 ɸ1.5 1.04 Reel feed direction KPICC0234EA Packing quantity 3000 pcs/reel Packing type Reel and desiccant in moisture-proof packing (vacuum-sealed) 5 Photo IC diode S11154-201CT Operating voltage, output characteristics Figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: LED) for the measurement circuit example in Figure 1. The output curves are shown for illuminance levels. The output curves rise from a reverse voltage (rising voltage) of approximately 0.7 V (±10%). To protect the photo IC diode from excessive current, a 150 Ω (±20%) protection resistor is inserted in the circuit. Reverse voltage VR when the photo IC diode is saturated is the sum of Vbe(ON) and the voltage drop across the protection resistor Rin [Equation (1)]. VR = Vbe(ON) + IL × Rin ............ (1) The photodiode’s reverse voltage (VR) is expressed by Equation (2) according to the voltage drop across the external resistor. This is indicated as load lines in Figure 2. VR = Vcc - IL × RL ............ (2) In Figure 2, the intersections between the output curves and the load lines are the saturation points. From these points, the maximum detectable light level can be specified. Since the maximum light level is determined by the supply voltage (Vcc) and load resistance (RL), adjust them according to the operating conditions. Note: The temperature characteristics of Vbe(ON) is approximately -2 mV/°C, and that of the protection resistor is approximately 0.1%/°C. Figure 1 Measurement circuit example IL RL (external resistor) Rin=150 Ω ± 20% (internal protection resistor) Vcc Photo IC diode KPICC0128EC Figure 2 Photocurrent vs. reverse voltage (Typ. Ta=25 °C) 0.6 Internal protection resistance Rin=Approx. 150 Ω 530 lx 0.5 Photocurrent (mA) Saturation region Approx. 420 lx 440 lx 0.4 350 lx 0.3 Load line Vcc=5 V, RL=1 kΩ Saturation region Approx. 210 lx 0.2 250 lx 160 lx Load line Vcc=3 V, RL=1 kΩ 0.1 85 lx Rising voltage 0 0 1 2 3 4 5 Reverse voltage (V) KPICB0147EB 6 Photo IC diode S11154-201CT Example of temperature profile measured with hot-air reflow oven for our product testing 300 °C Temperature 260 °C max. 217 °C 200 °C 150 °C Soldering 100 s max. Preheat 160 s max. Time KPICB0119EB ・This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 168 hours. ・The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. When setting the reflow soldering conditions, check for any problems by testing out the reflow soldering methods in advance. Lineup of illuminance sensors Type No. Type Output Package (mm) Spectral Reverse voltage response range [Supply voltage] (nm) ϕ5 × 3.5t (Top view) S9648-200SB Photocurrent * Rise time 2856 K, 100 lx (ms) 0.26 mA 300 to 820 Photo IC diode S9067-201CT Analog current output S9705 3.2 × 2.7 × 1.1t -0.5 to +12 V COB 2.0 × 1.25 × 0.8t COB S11154-201CT Frequency output Light-to-frequency 3.0 × 4.0 × 1.3t (for direct connection [2.7 to 5.5 V] converter photo IC 4-pin plastic to microcontroller) Photo 6 0.26 mA 480 to 640 0.11 mA 6 380 to 640 50 kHz - * S9705: frequency output Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer 7 Photo IC diode S11154-201CT Information described in this material is current as of August, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1092E03 Aug. 2015 DN 8