g8941 series kird1054e

InGaAs PIN photodiodes
G8941 series
Sub-mount type photodiodes for LD monitor
Features
Applications
Photosensitive area
G8941-01: ϕ1 mm
G8941-02: ϕ0.5 mm
G8941-03: ϕ0.3 mm
Miniature package: 2 × 2 × 1 mm
LD monitor
Precise chip position tolerance: ±0.075 mm
Structure
Parameter
Photosensitive area
G8941-01
ϕ1
G8941-02
ϕ0.5
G8941-03
ϕ0.3
Unit
mm
G8941-01
10
G8941-02
20
-40 to +85
-55 to +125
G8941-03
20
Unit
V
°C
°C
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Tstg
Remark
*
* In N2 environment or in vacuum
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Spectral response range
λ
Photosensitivity
S
Dark current
Shunt resistance
ID
Rsh
Terminal capacitance
Ct
Cutoff frequency
fc
Noise equivalent power
Detectivity
NEP
D*
Condition
λ=1.31 μm
λ=1.55 μm
VR=5 V
VR=10 mV
VR=5 V
f=1 MHz
VR=5 V
RL=50 Ω
λ=λp
λ=λp
G8941-01
Typ.
Max.
0.9 to 1.7
0.8
0.9
0.85
0.95
1
5
100
Min.
G8941-02
Typ.
Max.
0.9 to 1.7
0.8
0.9
0.85
0.95
0.5
2.5
300
Min.
G8941-03
Typ.
Max.
0.9 to 1.7
0.8
0.9
0.85
0.95
0.3
1.5
1000
Min.
Unit
μm
A/W
nA
MΩ
-
90
-
-
12
-
-
5
-
pF
-
35
-
-
200
-
-
400
-
MHz
2 × 10-14
5 × 1012
8 × 10-15
5 × 1012
4 × 10-15
5 × 1012
W/Hz1/2
cm∙Hz1/2/W
The G8941 series may be damaged by electrostatic discharge, etc. Be careful when using the G8941 series.
www.hamamatsu.com
1
InGaAs PIN photodiodes
G8941 series
Spectral response
Dark current vs. reverse voltage
(Typ. Ta=25 °C)
1
(Typ. Ta=25 °C)
10 nA
1 nA
Dark current
Photosensitivity (A/W)
G8941-01
0.5
G8941-02
100 pA
0.6
0.8
1.0
1.2
1.4
1.6
1.8
G8941-03
10 pA
0.01
2.0
0.1
Wavelength (µm)
1
10
100
Reverse voltage (V)
KIRDB0002EB
KIRDB0270EB
Terminal capacitance vs. reverse voltage
Dark current vs. temperature
(Typ. Ta=25 °C, f=1 MHz)
1 nF
(Typ. VR=5 V)
100 nA
G8941-01
G8941-01
G8941-02
100 pF
Dark current
Terminal capacitance
10 nA
G8941-02
1 nA
100 pA
G8941-03
10 pF
G8941-03
1 pF
0.01
0.1
1
10 pA
10
100
1 pA
-60
-40
-20
0
20
40
60
80
100
Temperature (°C)
Reverse voltage (V)
KIRDB0271EA
KIRDB0272EA
2
InGaAs PIN photodiodes
G8941 series
Dimensional outlines (unit: mm)
G8941-01
0.3 1 ± 0.1
0.4
(1)
(0.8)
Photosensitive area 1.0
1 ± 0.1
(0.4)
(0.1)
0.925
0.4
1
2 ± 0.05
1.175
0.2
0.1
0.2
Anode
(0.4)
Photosensitive
surface
(0.25)
(0.1)
2 ± 0.05
Cathode
Tolerance unless otherwise noted: ± 0.075
Values in parentheses are not
guaranteed, but for reference.
2 ± 0.05
KIRDA0159EB
G8941-02
1 ± 0.1
Photosensitive area 0.5
2 ± 0.05
(1)
(0.1)
0.4
1
0.4
(0.1)
0.6
2 ± 0.05
0.1
1
0.2
0.2 1 ± 0.1
(0.8)
(0.4)
(0.25)
0.2
Anode
(0.4)
Photosensitive
surface
2 ± 0.05
Cathode
Tolerance unless otherwise noted: ± 0.075
Values in parentheses are not
guaranteed, but for reference.
KIRDA0160EB
3
InGaAs PIN photodiodes
G8941 series
G8941-03
1 ± 0.1
(0.4)
(1)
1
2 ± 0.05
0.4
(0.8)
Photosensitive area 0.3
2 ± 0.05
Anode
(0.4)
(0.1)
1
0.2
0.2 1 ± 0.1
0.4
0.5
0.1
0.2
(0.25)
(0.1)
Photosensitive
surface
2 ± 0.05
Cathode
Tolerance unless otherwise noted: ± 0.075
Values in parentheses are not
guaranteed, but for reference.
KIRDA0161EB
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Surface mount type products
Information described in this material is current as of July, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KIRD1054E04 Jul. 2015 DN
4