InGaAs PIN photodiodes G12180 series Photosensitive area from ϕ0.3 mm to ϕ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm. Features Applications Low noise, low dark current Laser monitors Low terminal capacitance Optical power meters Large photosensitive area Laser diode life test Various photosensitive area sizes available NIR (near infrared) photometry Optical communications Options Amplifier for InGaAs PIN photodiode C4159-03 Heatsink for one-stage TE-cooled type A3179 Heatsink for two-stage TE-cooled type A3179-01 Temperature controller for TE-cooler type C1103-04 Specifications/Absolute maximum ratings Type no. G12180-003A G12180-005A G12180-010A G12180-020A G12180-030A G12180-050A G12180-110A G12180-120A G12180-130A G12180-150A G12180-210A G12180-220A G12180-230A G12180-250A Dimensional outline/ Package Window 1 material* (1)/K (2)/K Cooling TO-18 TO-5 Noncooled (3)/K One-stage TE-cooled (4)/K TO-8 (5)/K Two-stage TE-cooled Absolute maximum ratings Photosensitive TE-cooler TE-cooler Thermistor power Storage Reverse Operating area allowable allowable dissipation voltage temperature*2 temperature*2 Soldering current voltage conditions (mm) ϕ0.3 ϕ0.5 ϕ1 ϕ2 ϕ3 ϕ5 ϕ1 ϕ2 ϕ3 ϕ5 ϕ1 ϕ2 ϕ3 ϕ5 (mW) (A) (V) (V) (°C) (°C) -40 to +100 -55 to +125 20 - - - 10 5 2 1.5 1 5 2 0.2 1 1.2 260 °C or less, within 10 s -40 to +70 -55 to +85 5 2 *1: K: borosilicate glass with anti-reflective coating (optimized for 1.55 μm peak) *2: No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. The G12180 series may be damaged by electrostatic discharge, etc. Be careful when using the G12180 series. www.hamamatsu.com 1 InGaAs PIN photodiodes G12180 series Electrical and optical characteristics (Typ. unless otherwise noted) Measurement condition Photosensitivity S Spectral Peak response sensitivity Type no. Element range wavelength 1.3 μm λ λp temperature (℃) G12180-003A G12180-005A G12180-010A G12180-020A G12180-030A G12180-050A G12180-110A G12180-120A G12180-130A G12180-150A G12180-210A G12180-220A G12180-230A G12180-250A 25 -10 -20 λ=λp Terminal Temper- Cutoff Dark Shunt capaciature frequency current tance resistance fc coefficient ID Ct Rsh of dark VR=1 V VR=1 V VR=10 mV VR=1 V current RL=50 Ω f=1 MHz ∆TID Min. Typ. Min. Typ. Typ. Max. VR=1 V (μm) (μm) (A/W) (A/W) (A/W) (A/W) (nA) (nA) 0.1*3 0.5*3 0.15*3 0.75*3 0.8*3 4*3 0.9 to 1.7 1.5 7.5 2.5 12.5 5 25 0.02 0.1 1.55 0.8 0.9 0.9 1.1 1.09 0.1 0.5 0.9 to 1.67 0.15 0.8 0.33 1.67 0.01 0.06 0.04 0.2 0.9 to 1.65 0.07 0.35 0.15 0.75 Detectivity D* λ=λp Noise equivalent power NEP λ=λp Min. Typ. Typ. Max. Min. Typ. Min. Typ. Typ. Max. (MHz) (MHz) (pF) (pF) (MΩ) (MΩ) (cm·Hz1/2/W) (cm·Hz1/2/W) (W/Hz1/2) (W/Hz1/2) 450*4 600*4 5*5 7.5*5 200 1000 4.2 × 10-15 1.2 × 10-14 160*4 200*4 15*5 20*5 80 400 7.0 × 10-15 1.9 × 10-14 25*4 60*4 55*5 120*5 25 125 1.4 × 10-14 3.8 × 10-14 2.4 × 1012 6.3 × 1012 4 13 250 800 6.5 30 2.8 × 10-14 7.5 × 10-14 2.5 7 450 1500 4 20 4.4 × 10-14 1.1 × 10-13 0.5 3 1000 7000 1.3 6.5 7.0 × 10-14 1.9 × 10-13 20 40 75 140 750 3750 2.0 × 10-15 5.4 × 10-15 4 13 250 800 200 900 4.0 × 10-15 1.1 × 10-14 1.6 × 1013 4.4 × 1013 2.5 7 450 1500 120 600 4.9 × 10-15 1.4 × 10-14 0.5 3 1000 7000 40 200 8.6 × 10-15 2.3 × 10-14 20 40 75 140 1750 8750 1.3 × 10-15 3.5 × 10-15 4 13 250 800 500 2000 2.7 × 10-15 6.5 × 10-15 2.6 × 1013 6.7 × 1013 2.5 7 450 1500 280 1400 3.2 × 10-15 8.7 × 10-15 0.5 3 1000 7000 90 500 5.3 × 10-15 1.5 × 10-14 *3: VR=5 V *4: VR=5 V, RL=50 Ω, -3 dB *5: VR=5 V, f=1 MHz Spectral transmittance characteristics of window material Spectral response (Typ.) 1.2 0.8 Transmittance (%) Photosensitivity (A/W) 1.0 (Typ. Ta=25 °C) 100 Td=25 ˚C Td=-10 ˚C Td=-20 ˚C 0.6 0.4 95 90 0.2 0 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Wavelength (μm) 85 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 Wavelength (μm) KIRDB0374EB KIRDB0545EA 2 InGaAs PIN photodiodes G12180 series Linearity (Typ. Ta=25 °C) 2 (Typ. Ta=25 °C, λ=1.3 μm, RL=2 Ω, VR=0 V) 102 100 Relative sensitivity (%) Temperature coefficient of sensitivity (%/°C) Photosensitivity temperature characteristics 1 0 G12180-010A 98 G12180-020A 96 G12180-030A 94 G12180-050A 92 -1 0.8 90 1.0 1.2 1.4 1.6 1.8 0 2 6 4 8 10 12 16 14 Incident light level (mW) Wavelength (μm) KIRDB0541EA KIRDB0042EB Dark current vs. reverse voltage Non-cooled type TE-cooled type (Typ. Ta=25 °C) 100 nA 10 nA G12180-120A (Td=-10 °C) 100 pA Dark current Dark current G12180-020A 1 nA G12180-005A 10 pA G12180-010A 100 pA G12180-230A (Td=-20 °C) G12180-003A 10 pA 0.01 G12180-130A (Td=-10 °C) Dotted line G12180-150A (Td=-10 °C) G12180-250A (Td=-20 °C) Solid line G12180-030A G12180-050A (Typ.) 1 nA 0.1 1 10 G12180-110A (Td=-10 °C) 100 Reverse voltage (V) 1 pA 0.01 0.1 G12180-220A (Td=-20 °C) G12180-210A (Td=-20 °C) 1 10 Reverse voltage (V) KIRDB0542EB KIRDB0607EA 3 InGaAs PIN photodiodes G12180 series Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature (Typ. Ta=25 °C, f=1 MHz) (Typ. VR=10 mV) 1 TΩ 10 nF G12180-003A 100 GΩ G12180-030A/ -130A/-230A G12180-050A/-150A/-250A G12180-005A G12180-020A/ -120A/-220A 1 nF G12180-010A/ -110A/-210A 100 pF G12180-005A Shunt resistance Terminal capacitance 10 GΩ 10 pF 1 GΩ 100 MΩ 10 MΩ G12180-020A/ -120A/-220A 1 MΩ G12180-030A/ -130A/-230A 100 kΩ 10 kΩ G12180-003A 1 pF 0.01 G12180-010A/ -110A/-210A 0.1 1 10 G12180-050A/-150A/-250A 1 kΩ -40 100 -20 0 20 40 60 80 Element temperature (°C) Reverse voltage (V) KIRDB0544EB KIRDB0543EB Thermistor temperature characteristics 105 104 -20 0 20 One-stage TE-cooled type 0 -20 Element temperature (°C) Two-stage TE-cooled type -40 -60 20 (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 40 Element temperature (°C) Resistance (Ω) Cooling characteristics of TE-cooler (Typ.) 106 103 -40 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Current (A) KIRDB0116EA KIRDB0231EA 4 InGaAs PIN photodiodes G12180 series Current vs. voltage (TE-cooler) Dimensional outlines (unit: mm) (1) G12180-003A/-005A/-010A (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 1.6 ϕ5.4 ± 0.2 1.4 1.0 2.6 ± 0.2 Window ϕ2.2 min. 3.7 ± 0.2 One-stage TE-cooled type 1.2 0.8 Photosensitive surface 0.6 Two-stage TE-cooled type 0.4 13 min. Current (A) ϕ4.7 ± 0.1 ϕ0.45 Lead 0.2 ϕ2.54 ± 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Voltage (V) KIRDB0115EB Case KIRDA0150ED 5 InGaAs PIN photodiodes ϕ12.4 ± 0.1 ϕ0.45 Lead 0.5 Photosensitive surface ϕ0.45 Lead ϕ7.5 ± 0.2 ϕ5.1 ± 0.3 2.8 ± 0.2 Window ϕ7.0 min. 18 min. Photosensitive surface 0.4 max. Window ϕ4.5 min. 4.9 ± 0.2 ϕ13.8 ± 0.2 ϕ8.3 ± 0.1 2.5 ± 0.2 ϕ9.2 ± 0.2 4.9 ± 0.2 (3) G12180-050A 14 min. (2) G12180-020A/-030A G12180 series Index mark ϕ1.0 ϕ1.5 max. Case Case KIRDA0052EC KIRDA0155EB 6 InGaAs PIN photodiodes G12180 series (4) G12180-110A/-120A/-130A/-150A (5) G12180-210A/-220A/-230A/-250A ϕ15.3 ± 0.2 ϕ14 ± 0.2 ϕ14 ± 0.2 6.4 ± 0.2 ϕ15.3 ± 0.2 A 12 min. ϕ0.45 Lead 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 ϕ0.45 Lead Photosensitive surface 12 min. Photosensitive surface 10 ± 0.2 Window ϕ10 ± 0.2 A Window ϕ10 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 A G12180-110A G12180-120A /-130A/-150A 4.3 ± 0.2 4.4 ± 0.2 KIRDA0246EA Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 A G12180-210A G12180-220A /-230A/-250A 6.6 ± 0.2 6.7 ± 0.2 KIRDA0247EA 7 InGaAs PIN photodiodes G12180 series Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Infrared detectors Information described in this material is current as of December, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. 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Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1121E05 Dec. 2015 DN 8