InGaAs PIN photodiodes G12183 series Long wavelength type (cutoff wavelength: 2.55 to 2.6 μm) Features Applications Cutoff wavelength: 2.55 to 2.6 μm Optical power meters Low cost Gas analyzers Photosensitive area: φ0.3 to φ3 mm Moisture meters Low noise NIR (near infrared) photometry High sensitivity Options High reliability High-speed response Amplifier for InGaAs PIN photodiode C4159-03 Heatsink for one-stage TE-cooled type A3179 Heatsink for two-stage TE-cooled type A3179-01 Temperature controller for TE-cooled type C1103-04 Structure / Absolute maximum ratings Absolute maximum ratings Photosensitive Thermister TE-cooler TE-cooler Reverse Operating Storage area power allowable allowable voltage temperature temperature Soldering Type no. Cooling dissipation current Topr voltage Tstg VR max conditions (mm) (mW) (A) (V) (V) (°C) (°C) φ0.3 G12183-003K (1)/B TO-18 φ0.5 G12183-005K Non-40 to +85*2 -55 to +125*2 φ1 G12183-010K cooled φ2 G12183-020K (2)/B TO-5 φ3 G12183-030K φ0.3 G12183-103K φ0.5 G12183-105K 260 °C or One-stage 1.5 1.0 (3)/B TO-8 1 less, φ1 G12183-110K TE-cooled within 10 s φ2 G12183-120K φ3 G12183-130K -40 to +70*2 -55 to +85*2 0.2 φ0.3 G12183-203K φ0.5 G12183-205K Two-stage 1.0 1.2 (4)/B TO-8 φ1 G12183-210K TE-cooled φ2 G12183-220K φ3 G12183-230K Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: B=Borosilicate glass *2: No condensation Dimensional outline Package /Window material*1 The G12183 series may be destroyed or deteriorated by electrostatic discharge, etc. Be carefull when using the G12183 series. www.hamamatsu.com 1 InGaAs PIN photodiodes G12183 series Electrical and optical characteristics (Typ., unless otherwise noted) Measurement Condition Type no. G12183-003K G12183-005K G12183-010K G12183-020K G12183-030K G12183-103K G12183-105K G12183-110K G12183-120K G12183-130K G12183-203K G12183-205K G12183-210K G12183-220K G12183-230K Cutoff Terminal Peak Shunt Dark PhotoDetectivity frequency capacitance Spectral sensiresistance sensitivity current Temp. Ct D* fc response tivity S Rsh ID coefficient λ=λp VR=0 V range waveVR=0 V Element λ=λp VR=0.5 V of ID VR=10 mV RL=50 Ω f=1 MHz length λ temperature VR=0.5 V λp Min. Typ. Typ. Max. Min. Typ. Typ. Max. Min. Typ. Min. Typ. (°C) (μm) (μm) (A/W) (A/W) (μA) (μA) (MHz) (MHz) (pF) (pF) (kΩ) (kΩ) (cm·Hz1/2/W) (cm·Hz1/2/W) 0.4 4 20 50 50 100 20 100 1 10 5 20 140 300 10 50 25 0.9 to 2.6 3 30 2 6 500 1000 2.8 14 3 × 1010 9 × 1010 10 100 1 1.5 1800 3000 0.65 3 30 300 0.5 0.8 4000 5000 0.25 1.4 0.12 1.2 20 70 44 100 200 1000 0.3 3 5 25 120 300 100 500 -10 0.9 to 2.57 2.3 2 7 440 1000 28 140 1 × 1011 3 × 1011 1 1.3 0.9 9 1.035 3 30 1 2 1500 3000 6.5 30 9 90 0.5 0.9 3400 5000 2.8 14 0.085 0.85 20 75 40 100 400 2000 0.21 2.1 5 28 110 300 200 1000 -20 0.9 to 2.55 0.65 6.5 2 8 400 1000 55 280 1.5 × 1011 4.5 × 1011 2.1 21 1 2.3 1400 3000 13 60 6 60 0.5 1 3200 5000 5.5 28 (Typ. VR=0 V) 1.4 Td=25 ˚C Td=-10 ˚C Td=-20 ˚C Photosensitivity (A/W) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.8 1.0 1.2 1.4 Typ. (W/Hz1/2) 4 × 10-13 5 × 10-13 1 × 10-12 2 × 10-12 3 × 10-12 1 × 10-13 1.5 × 10-13 2.5 × 10-13 5.5 × 13-13 8.5 × 10-13 7 × 10-14 1 × 10-13 2 × 10-13 4 × 10-13 6 × 10-13 Max. (W/Hz1/2) 9 × 10-13 1.5 × 10-12 3 × 10-12 5 × 10-12 8 × 10-12 3 × 10-13 4.5 × 10-13 8 × 10-13 2 × 10-12 2.5 × 10-12 2 × 10-13 3 × 10-13 5.5 × 10-13 1 × 10-12 2 × 10-12 Photosensitivity temperature characteristics 1.6 1.8 2.0 2.2 2.4 2.6 Photosensitivity temperature coefficient (%/°C) Spectral response Noize equivalent power NEP λ=λp (Typ.) 2 1 0 -1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Wavelength (μm) Wavelength (μm) KIRDB0491EC KIRDB0206EA 2 InGaAs PIN photodiodes G12183 series Linearity (G12183-010K) (Typ. Ta=25 °C, λ=1.55 μm, RL=2 Ω, VR=0 V) 102 100 Relative sensitivity (%) 98 96 94 92 90 88 86 84 82 80 0 2 4 6 10 8 Incident light level (mW) KIRDB0539EA Dark current vs. reverse voltage Non-cooled type TE-cooled type (Typ. Ta=25 °C) 100 μA (Typ.) 100 μA G12183-130K (Td=-10 °C) G12183-230K (Td=-20 °C) G12183-030K 10 μA G12183-120K (Td=-10 °C) 10 μA Dark current Dark current G12183-020K G12183-010K 1 μA G12183-005K G12183-003K G12183-220K (Td=-20 °C) 1 μA G12183-110K (Td=-10 °C) G12183-210K (Td=-20 °C) G12183-105K (Td=-10 °C) 100 nA 100 nA G12183-205K (Td=-20 °C) G12183-103K (Td=-10 °C) G12183-203K (Td=-20 °C) 10 nA 0.01 0.1 1 10 Reverse voltage (V) 10 nA 0.01 0.1 1 10 Reverse voltage (V) KIRDB0492EA KIRDB0531EA 3 InGaAs PIN photodiodes G12183 series Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature (Typ. Ta=25 °C, f=1 MHz) 10 nF (Typ. VR=10 mV) 10 MΩ G12183-003K/-103K/-203K G12183-030K/-130K/-230K G12183-005K/-105K/-205K G12183-010K/-110K/-210K 1 nF Shunt resistance Terminal capacitance 1 MΩ G12183-020K/-120K/-220K G12183-010K/-110K/-210K G12183-005K/-105K/-205K 100 pF 100 kΩ 10 kΩ 1 kΩ G12183-020K/-120K/-220K 100 Ω G12183-030K/-130K/-230K G12183-003K/-103K/-203K 10 pF 0.001 0.01 0.1 1 10 Ω -40 10 -20 Revers voltage(V) 0 20 40 60 80 100 Element temperature (°C) KIRDB0493EB KIRDB0494EB The operating temperature for one-stage and two-stage TE-cooled types is up to 70 °C. Thermistor temperature characteristics (Typ.) 105 104 3 10 -40 -30 -20 -10 0 10 20 30 Element temperature (°C) (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 40 Element temperature (°C) 106 Resistance (Ω) Cooling characteristics of TE-cooler 20 One-stage TE-cooled type 0 -20 Two-stage TE-cooled type -40 -60 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Current (A) KIRDB0116EA KIRDB0231EA 4 InGaAs PIN photodiodes G12183 series Current vs. voltage (TE-cooler) (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 1.6 1.4 One-stage TE-cooled type Current (A) 1.2 1.0 0.8 0.6 Two-stage TE-cooled type 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Voltage (V) KIRDB0115EB Dimensional outlines (unit: mm) (1) G12183-003K/-005K/-010K (2) G12183-020K/-030K 9.2 ± 0.2 5.4 ± 0.2 0.45 Lead 4.2 ± 0.2 0.45 Lead 18 min. 13 min. Photosensitive surface 2.5 ± 0.2 0.15 max. 3.6 ± 0.2 2.6 ± 0.2 0.1 max. Photosensitive surface Window 5.9 ± 0.1 0.4 max. 8.1 ± 0.1 4.7 ± 0.1 Window 3.0 ± 0.1 5.1 ± 0.3 2.54 ± 0.2 1.5 max. Case Case Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 KIRDA0220EA Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 KIRDA0221EA 5 InGaAs PIN photodiodes G12183 series (3) G12183-103K/-105K/-110K/-120K/-130K (4) G12183-203K/-205K/-210K/-220K/-230K 15.3 ± 0.2 15.3 ± 0.2 14 ± 0.2 A A 12 min. 0.45 Lead 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 0.45 Lead Photosensitive surfacae 12 min. Photosensitive surfacae 10 ± 0.2 Window 10 ± 0.2 0.2 max. 6.4 ± 0.2 0.2 max. 14 ± 0.2 Window 10 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) Te-cooler (+) Thermistor Detector (anode) Detector (cathode) TE-cooler (-) Te-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 G12183-103K G12183-120K /-105K/110K /-130K A 4.3 ± 0.2 G12183-203K G12183-220K /-205K/-210K /-230K 4.4 ± 0.2 KIRDA0228EA A 6.6 ± 0.2 6.7 ± 0.2 KIRDA0229EA Information described in this material is current as of April, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1119E02 Apr. 2013 DN 6