Data Sheet

PMD2001D
MOSFET driver
Rev. 02 — 28 August 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
n
n
n
n
n
Switching transistors in push-pull configuration
Application-optimized pinout
Space-saving solution
Internal connections to minimize layout effort
Reduces component count
1.3 Applications
n MOSFET driver
n Power bipolar transistor driver
n Output current booster for operational amplifier
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
open base
-
-
40
V
-
-
0.6
A
single pulse;
tp ≤ 1 ms
-
-
1
A
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter voltage
IC
collector current
ICM
peak collector current
PMD2001D
NXP Semiconductors
MOSFET driver
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
1
base TR1, TR2
2
collector TR2
3
collector TR2
4
emitter TR1, TR2
5
collector TR1
6
collector TR1
6
5
4
1
2
3
Symbol
6
5
TR1
1
4
TR2
2
3
006aaa659
3. Ordering information
Table 3.
Ordering information
Type number
PMD2001D
Package
Name
Description
Version
SC-74
plastic surface-mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMD2001D
9E
PMD2001D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
2 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
40
V
VCEO
collector-emitter voltage
open base
-
40
V
IC
collector current
-
0.6
A
ICM
peak collector current
-
1
A
IBM
peak base current
-
0.1
A
-
0.2
A
[1]
-
320
mW
[2]
-
400
mW
[3]
-
540
mW
single pulse;
tp ≤ 1 ms
single pulse;
tp ≤ 1 ms
Per device
Tamb ≤ 25 °C
total power dissipation
Ptot
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa768
600
(1)
Ptot
(mW)
400
(2)
(3)
200
0
−75
−25
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1cm2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PMD2001D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
3 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from
junction to ambient
Rth(j-a)
in free air
Min
Typ
Max
Unit
[1]
-
-
390
K/W
[2]
-
-
315
K/W
[3]
-
-
230
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa769
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD2001D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
4 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
006aaa770
103
duty cycle =
Zth(j-a)
(K/W)
102
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa771
103
duty cycle =
Zth(j-a)
(K/W)
102
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD2001D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
5 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
collector-base cut-off VCB = 40 V; IE = 0 A
current
VCB = 40 V; IE = 0 A;
Tj = 150 °C
-
-
10
nA
-
-
10
µA
DC current gain
100
210
-
Per NPN transistor
ICBO
hFE
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 200 mA
VCE = 5 V; IC = 500 mA
VCEsat
VBEsat
collector-emitter
saturation voltage
base-emitter
saturation voltage
[1]
IC = 200 mA; IB = 20 mA
IC = 500 mA; IB = 50 mA
[1]
IC = 200 mA; IB = 20 mA
IC = 500 mA; IB = 50 mA
[1]
100
170
300
50
100
-
-
150
250
mV
-
300
500
mV
-
0.86
1
V
-
0.95
1.1
V
-
-
−10
nA
-
-
−10
µA
100
180
-
80
125
300
Per PNP transistor
ICBO
collector-base cut-off VCB = −40 V; IE = 0 A
current
VCB = −40 V; IE = 0 A;
Tj = 150 °C
DC current gain
hFE
VCE = −5 V; IC = −1 mA
VCE = −5 V; IC = −200 mA
VCE = −5 V; IC = −500 mA
VCEsat
VBEsat
collector-emitter
saturation voltage
base-emitter
saturation voltage
[1]
IC = −200 mA; IB = −20 mA
IC = −500 mA; IB = −50 mA
[1]
IC = −200 mA; IB = −20 mA
IC = −500 mA; IB = −50 mA
[1]
50
80
-
-
−130
−250
mV
-
−280
−500
mV
-
−0.87
−1
V
-
−0.98
−1.1
V
-
3
-
ns
Per device
td
delay time
tr
rise time
-
3
-
ns
ton
turn-on time
-
6
-
ns
ts
storage time
-
2
-
ns
tf
fall time
-
3
-
ns
toff
turn-off time
-
5
-
ns
[1]
IC = 0.15 A; VI = 7.5 V
Pulse test: tp ≤ 300 µs; δ ≤ 0.02
PMD2001D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
6 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
006aaa772
800
hFE
IB (mA) = 30
27
24
21
IC
(A)
(1)
600
006aaa777
1.2
18
15
12
9
0.8
400
6
(2)
(3)
3
0.4
(4)
200
(5)
0
10−1
1
10
102
0
103
IC (mA)
0
2
4
6
8
10
VCE (V)
Tamb = 25 °C
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb = 100 °C
(4) Tamb = 25 °C
(5) Tamb = −55 °C
Fig 5.
TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 6.
006aaa773
1.2
VBE
(V)
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
006aaa776
1.2
VBEsat
(V)
1.0
1.0
(1)
(1)
0.8
0.8
(2)
(2)
0.6
(3)
0.6
(3)
0.4
0.4
0.2
10−1
1
10
102
0.2
10−1
103
1
IC (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
Fig 8.
103
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
PMD2001D_2
Product data sheet
102
IC (mA)
(2) Tamb = 25 °C
Fig 7.
10
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
7 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
006aaa774
1
VCEsat
(V)
006aaa775
1
VCEsat
(V)
(1)
(2)
(3)
(1)
(2)
10−1
10−1
10−2
10−1
1
10
102
103
(3)
10−2
10−1
1
IC (mA)
103
Tamb = 25 °C
IC/IB = 20
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 10. TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
PMD2001D_2
Product data sheet
102
IC (mA)
(1) Tamb = 100 °C
Fig 9.
10
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
8 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
006aaa778
300
hFE
006aaa783
−1.2
IB (mA) = −25
−22.5
−20
−17.5
−15
−12.5
IC
(A)
(1)
−0.8
200
−10
(2)
−7.5
−5
100
−0.4
(3)
0
−10−1
−1
−10
−2.5
−102
−103
0
0
−2
−4
−6
IC (mA)
VCE = −5 V
−8
−10
VCE (V)
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. TR2 (PNP): DC current gain as a function of
collector current; typical values
006aaa779
−1.2
VBE
(V)
Fig 12. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
006aaa782
−1.2
VBEsat
(V)
−1.0
−1.0
(1)
(1)
−0.8
−0.8
(2)
(2)
−0.6
(3)
−0.6
(3)
−0.4
−0.4
−0.2
−10−1
−1
−10
−102
−103
−0.2
−10−1
−1
IC (mA)
−102
−103
IC (mA)
VCE = −5 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 13. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 14. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PMD2001D_2
Product data sheet
−10
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
9 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
006aaa780
−1
006aaa781
−1
VCEsat
(V)
VCEsat
(V)
(1)
(2)
(3)
−10−1
(1)
−10−1
(2)
(3)
−10−2
−10−1
−1
−10
−102
−10−2
−10−1
−103
IC (mA)
−1
−10
−102
−103
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 15. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 16. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
8. Test information
VCC
oscilloscope
(probe)
DUT
450 Ω
TR1
VI
VO
(probe)
450 Ω
R1
TR2
oscilloscope
RE
006aaa858
IC = 0.15 A; VI = 7.5 V; R1 = 56 Ω; RE = 47 Ω
Fig 17. Test circuit for switching times
PMD2001D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
10 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
9. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.40
0.25
0.95
0.26
0.10
1.9
Dimensions in mm
04-11-08
Fig 18. Package outline SOT457 (SC-74)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PMD2001D
Package
SOT457
Description
3000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
PMD2001D_2
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
11 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
11. Soldering
3.45
1.95
solder lands
0.95
solder resist
0.45 0.55
3.30 2.825
occupied area
solder paste
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 19. Reflow soldering footprint SOT457 (SC-74)
5.30
solder lands
5.05
0.45 1.45 4.45
solder resist
occupied area
1.40
msc423
4.30
Dimensions in mm
Fig 20. Wave soldering footprint SOT457 (SC-74)
PMD2001D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
12 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMD2001D_2
20090828
Product data sheet
-
PMD2001D_1
Modifications:
PMD2001D_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
Figure 20 “Wave soldering footprint SOT457 (SC-74)”: updated
20060925
Product data sheet
PMD2001D_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
13 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMD2001D_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 28 August 2009
14 of 15
PMD2001D
NXP Semiconductors
MOSFET driver
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 28 August 2009
Document identifier: PMD2001D_2
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