PMD9001D MOSFET driver Rev. 01 — 16 November 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features n n n n n n Two transistors and one high-speed switching diode as driver Totem pole configuration Application-optimized pinout Internal connections to minimize layout effort Space-saving solution Reduces component count 1.3 Applications n MOSFET driver 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit - - 0.1 A Per transistor collector current IC Transistor 2 (TR2) VCEO collector-emitter voltage open base - - 45 V ICM peak collector current single pulse; tp ≤ 1 ms - - 0.2 A - - −0.2 A - - −1.1 V Diode (D1) IF VF [1] forward current forward voltage Pulse test: tp ≤ 300 µs; δ ≤ 0.02. IF = −200 mA [1] PMD9001D NXP Semiconductors MOSFET driver 2. Pinning information Table 2. Pinning Pin Symbol Description 1 OUT output 2 GND ground 3 IN input 4 RC collector resistor 5 RC collector resistor 6 VCC supply voltage Simplified outline 6 5 4 1 2 3 Symbol 6 5 TR2 TR1 4 R2 D1 1 R1 2 3 006aaa658 3. Ordering information Table 3. Ordering information Type number PMD9001D Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMD9001D 9B 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Transistor 1 (TR1) VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V IC collector current - 0.1 A ICM peak collector current - 0.1 A VI input voltage positive - +12 V negative - −10 V single pulse; tp ≤ 1 ms Transistor 2 (TR2) VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V PMD9001D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 2 of 15 PMD9001D NXP Semiconductors MOSFET driver Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter IC collector current ICM peak collector current IBM Ptot Conditions Min Max Unit - 0.1 A single pulse; tp ≤ 1 ms - 0.2 A peak base current single pulse; tp ≤ 1 ms - 0.2 A total power dissipation Tamb ≤ 25 °C [1] - 290 mW [2] - 325 mW [3] - 400 mW - −0.2 A - −0.6 A tp = 1 µs - −9 A tp = 100 µs - −3 A tp = 10 ms - −1.7 A Diode (D1) IF forward current IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 IFSM non-repetitive peak forward current square wave Device Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PMD9001D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 3 of 15 PMD9001D NXP Semiconductors MOSFET driver 006aaa919 500 Ptot (mW) 400 (1) (2) 300 (3) 200 100 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. TR2: Power derating curves 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - - 430 K/W [2] - - 385 K/W [3] - - 312 K/W Transistor 2 (TR2) Rth(j-a) thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PMD9001D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 4 of 15 PMD9001D NXP Semiconductors MOSFET driver 006aaa920 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa921 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMD9001D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 5 of 15 PMD9001D NXP Semiconductors MOSFET driver 006aaa922 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Transistor 1 (TR1) ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IE = 0 A - - 1 µA VCE = 30 V; IE = 0 A; Tj = 150 °C - - 50 µA mA IEBO emitter-base cut-off current VEB = 5 V; IE = 0 A - - 2 hFE DC current gain VCE = 5 V; IC = 20 mA 30 55 - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 60 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 0.1 mA - 1.1 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA 2 1.6 - V R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 VCB = 30 V; IE = 0 A - - 15 nA VCB = 30 V; IE = 0 A; Tj = 150 °C - - 5 µA IC = 10 mA; IB = 0.5 mA - 60 200 mV IC = 100 mA; IB = 5 mA - 200 400 mV IC = 200 mA; IB = 20 mA - 340 500 mV Transistor 2 (TR2) ICBO VCEsat collector-base cut-off current collector-emitter saturation voltage PMD9001D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 6 of 15 PMD9001D NXP Semiconductors MOSFET driver Table 7. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 0.7 - V IC = 100 mA; IB = 5 mA - 0.9 - V base-emitter voltage VCE = 5 V; IC = 2 mA 610 660 710 mV VCE = 5 V; IC = 10 mA - - 770 mV - - −1.1 V VCE = 5 V; IC = 1 mA 200 290 450 VCE = 5 V; IC = 100 mA 95 140 - VCE = 5 V; IC = 200 mA 24 35 - IC = 0.05 A; IB = 2.5 mA - 11 - ns VBE Diode (D1) forward voltage VF IF = −200 mA [1] TR2 and D1 DC current gain hFE Device td delay time tr rise time - 54 - ns ton turn-on time - 65 - ns ts storage time - 1100 - ns tf fall time - 207 - ns toff turn-off time - 1307 - ns [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PMD9001D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 7 of 15 PMD9001D NXP Semiconductors MOSFET driver 006aaa015 103 006aaa014 103 hFE (1) (2) (3) 102 VCEsat (mV) 102 (1) (2) (3) 10 1 10−1 1 102 10 10 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 5. TR1: DC current gain as a function of collector current; typical values 006aaa016 102 102 10 IC (mA) VI(on) (V) Fig 6. TR1: Collector-emitter saturation voltage as a function of collector current; typical values 006aaa017 10 VI(off) (V) 10 (1) 1 1 (3) (1) (2) (3) 10−1 10−1 (2) 1 102 10 10−1 10−2 IC (mA) 1 10 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 7. TR1: On-state input voltage as a function of collector current; typical values Fig 8. TR1: Off-state input voltage as a function of collector current; typical values PMD9001D_1 Product data sheet 10−1 © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 8 of 15 PMD9001D NXP Semiconductors MOSFET driver 006aaa929 500 006aaa930 0.20 IB (mA) = 5 4.5 4 3.5 3 2.5 2 1.5 1 IC (A) hFE 400 0.16 (2) 300 0.12 (3) (4) (5) 0.5 200 (1) 0.08 100 0.04 0 10−1 1 102 10 103 0 0 1 2 3 IC (mA) 4 5 VCE (V) Tamb = 25 °C VCE = 5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (4) Tamb = 125 °C (5) Tamb = 150 °C Fig 9. TR2 and D1: DC current gain as a function of collector current; typical values 006aaa931 1.2 VBE (V) Fig 10. TR2: Collector current as a function of collector-emitter voltage; typical values 006aaa932 1.2 VBEsat (V) 1.0 1.0 (1) (1) 0.8 (2) 0.8 (2) (3) (3) 0.6 0.6 0.4 0.2 10−2 0.4 10−1 1 10 102 103 IC (mA) VCE = 5 V 0.2 10−2 10−1 10 102 103 IC (mA) IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 11. TR2: Base-emitter voltage as a function of collector current; typical values Fig 12. TR2: Base-emitter saturation voltage as a function of collector current; typical values PMD9001D_1 Product data sheet 1 © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 9 of 15 PMD9001D NXP Semiconductors MOSFET driver 006aaa933 1 006aaa934 1 VCEsat (V) VCEsat (V) 10−1 10−1 (1) (2) (1) (2) (3) 10−2 10−1 1 (3) 10 102 10−2 10−1 103 1 102 10 IC (mA) 103 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 13. TR2: Collector-emitter saturation voltage as a function of collector current; typical values Fig 14. TR2: Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information VCC RC DUT TR2 oscilloscope (probe) VO 450 Ω D1 R1 VI (probe) 450 Ω oscilloscope TR1 R2 006aaa936 IC = 0.05 A; IB = 2.5 mA; RC = 180 Ω Fig 15. Test circuit for switching times PMD9001D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 10 of 15 PMD9001D NXP Semiconductors MOSFET driver 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 16. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PMD9001D Package SOT457 Description 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping PMD9001D_1 Product data sheet Packing quantity © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 11 of 15 PMD9001D NXP Semiconductors MOSFET driver 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 17. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 18. Wave soldering footprint SOT457 (SC-74) PMD9001D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 12 of 15 PMD9001D NXP Semiconductors MOSFET driver 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMD9001D_1 20061116 Product data sheet - - PMD9001D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 13 of 15 PMD9001D NXP Semiconductors MOSFET driver 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] PMD9001D_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 16 November 2006 14 of 15 PMD9001D NXP Semiconductors MOSFET driver 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 November 2006 Document identifier: PMD9001D_1