Data Sheet

PMD9010D
MOSFET driver
Rev. 01 — 20 November 2006
Product data sheet
1. Product profile
1.1 General description
Two NPN transistors and high-speed switching diode connected in totem pole
configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic
package.
1.2 Features
n
n
n
n
n
n
Two general-purpose transistors and one high-speed switching diode as driver
Totem pole configuration
Application-optimized pinout
Internal connections to minimize layout effort
Space-saving solution
Reduces component count
1.3 Applications
n MOSFET driver
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
open base
-
-
45
V
-
-
0.1
A
-
-
0.2
A
-
-
−0.2
A
-
-
−1.1
V
Per transistor
VCEO
collector-emitter voltage
IC
collector current
ICM
peak collector current
single pulse;
tp ≤ 1 ms
Diode (D1)
IF
VF
[1]
forward current
forward voltage
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
IF = −200 mA
[1]
PMD9010D
NXP Semiconductors
MOSFET driver
2. Pinning information
Table 2.
Pinning
Pin
Symbol
Description
1
OUT
output
2
GND
ground
3
IN
input
4
RC
collector resistor
5
RC
collector resistor
6
VCC
supply voltage
Simplified outline
6
5
4
1
2
3
Symbol
6
5
TR2
4
TR1
D1
1
2
3
006aaa657
3. Ordering information
Table 3.
Ordering information
Type number
PMD9010D
Package
Name
Description
Version
SC-74
plastic surface-mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMD9010D
AA
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
open emitter
-
50
V
Transistor 1 (TR1)
VCBO
collector-base voltage
VCEO
collector-emitter voltage
open base
-
45
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
0.1
A
ICM
peak collector current
-
0.2
A
single pulse;
tp ≤ 1 ms
PMD9010D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
2 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
-
50
V
Transistor 2 (TR2)
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
IC
collector current
ICM
peak collector current
IBM
Ptot
-
45
V
-
0.1
A
single pulse;
tp ≤ 1 ms
-
0.2
A
peak base current
single pulse;
tp ≤ 1 ms
-
0.2
A
total power dissipation
Tamb ≤ 25 °C
[1]
-
290
mW
[2]
-
325
mW
[3]
-
400
mW
Diode (D1)
IF
forward current
-
−0.2
A
IFRM
repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25
-
−0.6
A
IFSM
non-repetitive peak forward
current
tp = 1 µs
-
−9
A
tp = 100 µs
-
−3
A
tp = 10 ms
-
−1.7
A
square wave
Device
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMD9010D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
3 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
006aaa919
500
Ptot
(mW)
400
(1)
(2)
300
(3)
200
100
0
−75
−25
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. TR2: Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
-
-
430
K/W
[2]
-
-
385
K/W
[3]
-
-
312
K/W
Transistor 2 (TR2)
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMD9010D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
4 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
006aaa920
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa921
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD9010D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
5 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
006aaa922
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD9010D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
6 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Transistor 1 (TR1)
ICBO
collector-base cut-off VCB = 30 V; IE = 0 A
current
-
-
100
nA
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A;
Tj = 150 °C
-
-
50
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
0.1
mA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
200
290
450
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
60
200
mV
VBEsat
base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
0.7
-
V
VBE
base-emitter voltage VCE = 5 V; IC = 2 mA
-
660
-
mV
-
-
15
nA
-
-
5
µA
Transistor 2 (TR2)
ICBO
VCEsat
collector-base cut-off VCB = 30 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
60
200
mV
IC = 100 mA; IB = 5 mA
-
200
400
mV
IC = 200 mA; IB = 20 mA
-
340
500
mV
IC = 10 mA; IB = 0.5 mA
-
0.7
-
V
VBEsat
base-emitter
saturation voltage
VBE
base-emitter voltage VCE = 5 V; IC = 2 mA
IC = 100 mA; IB = 5 mA
-
0.9
-
V
610
660
710
mV
-
-
770
mV
-
-
−1.1
V
VCE = 5 V; IC = 1 mA
200
290
450
VCE = 5 V; IC = 100 mA
95
140
-
VCE = 5 V; IC = 200 mA
24
35
-
IC = 0.05 A; IB = 2.5 mA
-
13
-
ns
VCE = 5 V; IC = 10 mA
Diode (D1)
forward voltage
VF
IF = −200 mA
[1]
TR2 and D1
DC current gain
hFE
Device
td
delay time
tr
rise time
-
77
-
ns
ton
turn-on time
-
90
-
ns
ts
storage time
-
853
-
ns
tf
fall time
-
205
-
ns
toff
turn-off time
-
1058
-
ns
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PMD9010D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
7 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
006aaa923
500
IB (mA) = 5
4.5
4
3.5
3
2.5
2
1.5
1
IC
(A)
(1)
hFE
006aaa924
0.20
400
0.16
(2)
300
0.12
0.5
200
0.08
(3)
100
0.04
0
10−1
1
102
10
103
0
0
1
2
3
4
IC (mA)
5
VCE (V)
Tamb = 25 °C
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. TR1: DC current gain as a function of collector
current; typical values
006aaa925
1.2
VBE
(V)
Fig 6. TR1: Collector current as a function of
collector-emitter voltage; typical values
006aaa926
1.2
VBEsat
(V)
1.0
1.0
(1)
(1)
0.8
0.8
(2)
(2)
(3)
0.6
0.6
(3)
0.4
0.2
10−2
0.4
10−1
1
10
102
103
IC (mA)
0.2
10−1
1
VCE = 5 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
103
Fig 8. TR1: Base-emitter saturation voltage as a
function of collector current; typical values
PMD9010D_1
Product data sheet
102
IC (mA)
(1) Tamb = −55 °C
Fig 7. TR1: Base-emitter voltage as a function of
collector current; typical values
10
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
8 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
006aaa927
1
006aaa928
1
VCEsat
(V)
VCEsat
(V)
10−1
10−1
(1)
(2)
(1)
(3)
(2)
(3)
10−2
10−1
1
10
102
103
10−2
10−1
1
IC (mA)
102
103
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 9. TR1: Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. TR1: Collector-emitter saturation voltage as a
function of collector current; typical values
PMD9010D_1
Product data sheet
10
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
9 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
006aaa929
500
006aaa930
0.20
IB (mA) = 5
4.5
4
3.5
3
2.5
2
1.5
1
IC
(A)
hFE
400
0.16
(2)
300
0.12
(3)
(4)
(5)
0.5
200
(1)
0.08
100
0.04
0
10−1
1
102
10
103
0
0
1
2
3
IC (mA)
4
5
VCE (V)
Tamb = 25 °C
VCE = 5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(4) Tamb = 125 °C
(5) Tamb = 150 °C
Fig 11. TR2 and D1: DC current gain as a function of
collector current; typical values
006aaa931
1.2
VBE
(V)
Fig 12. TR2: Collector current as a function of
collector-emitter voltage; typical values
006aaa932
1.2
VBEsat
(V)
1.0
1.0
(1)
(1)
0.8
(2)
0.8
(2)
(3)
(3)
0.6
0.6
0.4
0.2
10−2
0.4
10−1
1
10
102
103
IC (mA)
VCE = 5 V
0.2
10−2
10−1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 13. TR2: Base-emitter voltage as a function of
collector current; typical values
Fig 14. TR2: Base-emitter saturation voltage as a
function of collector current; typical values
PMD9010D_1
Product data sheet
1
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
10 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
006aaa933
1
006aaa934
1
VCEsat
(V)
VCEsat
(V)
10−1
10−1
(1)
(2)
(1)
(2)
(3)
10−2
10−1
1
(3)
10
102
10−2
10−1
103
1
102
10
IC (mA)
103
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 15. TR2: Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 16. TR2: Collector-emitter saturation voltage as a
function of collector current; typical values
8. Test information
VCC
RC
TR2
oscilloscope
(probe)
VO
450 Ω
VI
450 Ω
D1
R1
(probe)
oscilloscope
TR1
R2
DUT
006aaa935
IC = 0.05 A; IB = 2.5 mA; R1 = 1 kΩ; R2 = 1 kΩ; RC = 180 Ω
Fig 17. Test circuit for switching times
PMD9010D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
11 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
9. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.40
0.25
0.95
0.26
0.10
1.9
Dimensions in mm
04-11-08
Fig 18. Package outline SOT457 (SC-74)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PMD9010D
Package
SOT457
Description
3000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
PMD9010D_1
Product data sheet
Packing quantity
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
12 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
11. Soldering
3.45
1.95
solder lands
0.95
solder resist
0.45 0.55
3.30 2.825
occupied area
solder paste
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 19. Reflow soldering footprint SOT457 (SC-74)
5.30
solder lands
5.05
0.45 1.45 4.45
solder resist
occupied area
1.40
msc423
4.30
Dimensions in mm
Fig 20. Wave soldering footprint SOT457 (SC-74)
PMD9010D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
13 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMD9010D_1
20061120
Product data sheet
-
-
PMD9010D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
14 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PMD9010D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 20 November 2006
15 of 16
PMD9010D
NXP Semiconductors
MOSFET driver
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 November 2006
Document identifier: PMD9010D_1
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