Data Sheet

PMD9050D
MOSFET driver
Rev. 01 — 27 November 2006
Product data sheet
1. Product profile
1.1 General description
NPN transistor and high-speed switching diode supplemented by an NPN/PNP transistor
pair connected as a silicon-controlled switch in a SOT457 (SC-74) small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
n
n
n
n
n
n
General-purpose transistor and high-speed switching diode as driver
Silicon-controlled switch to bypass the driver transistor
Application-optimized pinout
Internal connections to minimize layout effort
Space-saving solution
Reduces component count
1.3 Applications
n MOSFET driver with silicon-controlled switch
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
-
-
45
V
-
-
0.1
A
-
-
0.2
A
-
-
0.2
A
-
-
1.1
V
-
-
60
V
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter voltage
IC
collector current
ICM
peak collector current
open base
single pulse;
tp ≤ 1 ms
Diode (D1)
IF
forward current
VF
forward voltage
VR
reverse voltage
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
IF = 200 mA
[1]
PMD9050D
NXP Semiconductors
MOSFET driver
2. Pinning information
Table 2.
Pinning
Pin
Symbol
Description
1
IN
input
2
OUT
output
3
RC
collector resistor
4
GND
ground
5
ON
output enable
6
OFF
output disable
Simplified outline
6
5
4
Symbol
6
5
4
TR3
1
2
TR2
3
TR1
D1
1
2
3
006aaa654
3. Ordering information
Table 3.
Ordering information
Type number
PMD9050D
Package
Name
Description
Version
SC-74
plastic surface-mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMD9050D
9G
PMD9050D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 27 November 2006
2 of 13
PMD9050D
NXP Semiconductors
MOSFET driver
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
45
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
0.1
A
ICM
peak collector current
-
0.2
A
IB
base current
-
0.1
A
IBM
peak base current
-
0.2
A
single pulse;
tp ≤ 1 ms
single pulse;
tp ≤ 1 ms
Diode (D1)
VRRM
repetitive peak reverse
voltage
-
60
V
VR
reverse voltage
-
60
V
IF
forward current
-
0.2
A
IFRM
repetitive peak forward
current
tp ≤ 1 ms; δ = 0.25
-
0.6
A
IFSM
non-repetitive peak forward
current
square wave
tp ≤ 1 µs
-
9
A
tp ≤ 100 µs
-
3
A
tp ≤ 10 ms
-
1.7
A
[1]
-
290
mW
[2]
-
400
mW
Device
total power dissipation
Ptot
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMD9050D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 27 November 2006
3 of 13
PMD9050D
NXP Semiconductors
MOSFET driver
006aaa909
500
Ptot
(mW)
400
300
(1)
(2)
200
100
0
−75
−25
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
[1]
-
-
430
K/W
[2]
-
-
312
K/W
Device
Rth(j-a)
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
PMD9050D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 27 November 2006
4 of 13
PMD9050D
NXP Semiconductors
MOSFET driver
006aaa910
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa911
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMD9050D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 27 November 2006
5 of 13
PMD9050D
NXP Semiconductors
MOSFET driver
7. Characteristics
Table 7.
Characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VCB = 30 V; IE = 0 A
-
-
50
nA
VCB = 30 V; IE = 0 A;
Tj = 150 °C
-
-
10
µA
VEB = 5 V; IC = 0 A
-
-
100
nA
200
320
450
VCE = 5 V; IC = 100 mA
95
165
-
VCE = 5 V; IC = 200 mA
24
40
-
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off
current
IEBO
emitter-base cut-off
current
hFE
DC current gain
TR1 and TR3 (NPN) VCE = 5 V; IC = 1 mA
TR2 (PNP)
VCEsat
VBEsat
VBE
collector-emitter
saturation voltage
VCE = 5 V; IC = 1 mA
200
270
450
VCE = 5 V; IC = 100 mA
95
120
-
VCE = 5 V; IC = 200 mA
24
45
-
IC = 10 mA; IB = 0.5 mA
-
70
200
mV
IC = 100 mA; IB = 5 mA
-
200
400
mV
IC = 200 mA; IB = 20 mA
-
350
500
mV
base-emitter saturation IC = 10 mA; IB = 0.5 mA
voltage
IC = 100 mA; IB = 5 mA
-
0.74
-
V
-
0.91
-
V
base-emitter voltage
IC = 200 mA; IB = 20 mA
-
1
1.2
V
VCE = 5 V; IC = 2 mA
-
660
-
mV
-
-
1.1
V
Diode (D1)
[1]
VF
forward voltage
IF = 200 mA
IR
reverse current
VR = 60 V
-
-
100
nA
VR = 60 V; Tj = 150 °C
-
-
100
µA
reverse recovery time
[2]
-
-
6
ns
forward recovery
voltage
[3]
-
-
2
V
-
12
-
ns
-
78
-
ns
trr
VFR
Transistor 1 (TR1)
td
delay time
IC = 0.05 A; IBon = 2.5 mA;
IBoff = −2.5 mA
tr
rise time
ton
turn-on time
-
90
-
ns
ts
storage time
-
853
-
ns
tf
fall time
-
205
-
ns
toff
turn-off time
-
1058
-
ns
[1]
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2]
When switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA.
[3]
When switched from IF = 400 mA; tr = 30 ns.
PMD9050D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 27 November 2006
6 of 13
PMD9050D
NXP Semiconductors
MOSFET driver
006aaa912
500
hFE
0.20
IC
(A)
(1)
006aaa913
IB (mA) = 5.0
4.5
4.0
0.16
400
(2)
0.12
300
200
0.08
(3)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.04
100
0
10−1
1
102
10
103
0
0
1
2
3
4
IC (mA)
5
VCE (V)
Tamb = 25 °C
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4. TR1 (NPN): DC current gain as a function of
collector current; typical values
006aaa914
1.1
VBE
(V)
Fig 5. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
006aaa915
1.2
VBEsat
(V)
0.9
1.0
(1)
(1)
0.7
0.8
(2)
(2)
0.5
0.6
(3)
(3)
0.3
10−2
10−1
1
10
102
103
IC (mA)
0.4
10−1
1
VCE = 5 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
103
Fig 7. TR1 (NPN): Base-emitter saturation voltage as a
function of collector current; typical values
PMD9050D_1
Product data sheet
102
IC (mA)
(1) Tamb = −55 °C
Fig 6. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
10
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 27 November 2006
7 of 13
PMD9050D
NXP Semiconductors
MOSFET driver
006aaa916
1
006aaa917
1
VCEsat
(V)
VCEsat
(V)
(1)
(2)
(3)
10−1
(1)
10−1
(2)
(3)
10−2
10−1
1
10
102
10−2
10−1
103
1
102
10
IC (mA)
103
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 8. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
Fig 9. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
8. Test information
RC
D1
VBB
oscilloscope
VCC
DUT
VO
(probe)
(probe)
4.5 kΩ
1.5 kΩ
RB
oscilloscope
R4
R2
VI
TR1
TR2
R1
TR3
R3
006aaa918
IC = 0.05 A; IBon = 2.5 mA; IBoff = −2.5 mA; R1 = 50 Ω; R2 = 1 kΩ; R3 = 1 kΩ; R4 = 1 kΩ;
RB = 1.5 kΩ; RC = 150 Ω
Fig 10. Test circuit for switching times per TR1
PMD9050D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 27 November 2006
8 of 13
PMD9050D
NXP Semiconductors
MOSFET driver
9. Package outline
3.1
2.7
6
3.0
2.5
1.7
1.3
1.1
0.9
5
4
2
3
0.6
0.2
pin 1 index
1
0.40
0.25
0.95
0.26
0.10
1.9
Dimensions in mm
04-11-08
Fig 11. Package outline SOT457 (SC-74)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PMD9050D
Package
SOT457
Description
3000
10000
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
PMD9050D_1
Product data sheet
Packing quantity
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 27 November 2006
9 of 13
PMD9050D
NXP Semiconductors
MOSFET driver
11. Soldering
3.45
1.95
solder lands
0.95
solder resist
0.45 0.55
3.30 2.825
occupied area
solder paste
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 12. Reflow soldering footprint
5.30
solder lands
5.05
0.45 1.45 4.45
solder resist
occupied area
1.40
msc423
4.30
Dimensions in mm
Fig 13. Wave soldering footprint
PMD9050D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 27 November 2006
10 of 13
PMD9050D
NXP Semiconductors
MOSFET driver
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMD9050D_1
20061127
Product data sheet
-
-
PMD9050D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 27 November 2006
11 of 13
PMD9050D
NXP Semiconductors
MOSFET driver
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PMD9050D_1
Product data sheet
© NXP B.V. 2006. All rights reserved.
Rev. 01 — 27 November 2006
12 of 13
PMD9050D
NXP Semiconductors
MOSFET driver
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 27 November 2006
Document identifier: PMD9050D_1
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