MPPC® (multi-pixel photon counter) S12572-010, -015C/P Low afterpulse, wide dynamic range, for high-speed measurement Photosensitive area: 3 × 3 mm These MPPCs utilize very small pixels arrayed at high densities to achieve a high-speed recovery time and wide dynamic range. Hamamatsu currently produces MPPC with a pixel density up to 10000 pixels/mm2 (pixel pitch: 10 μm). Utilizing advanced technology to enhance photon detection efficiency minimizes the drop in photon detection efficiency that usually occurs due to shrinking the pixel pitch. Features Applications Low afterpulse Scintillation measurement High fill factor Low-light-level detection High photon detection efficiency Scattered light measurement Wide operating voltage range Related product (sold separately) Short recovery time High count rate MPPC module C11209-110 Low afterpulse When an MPPC detects photons, the output may contain spurious signals appearing with a time delay from the light input to the MPPC. These signals are called afterpulses. Compared to our previously marketed products, the S12572 series have drastically reduced afterpulses due to use of improved materials and wafer process technologies. Reducing afterpulses brings various benefits such as a better S/N, a wider operating voltage range, and improved time resolution and photon detection efficiency in high voltage regions. Pulse waveform comparison Previous product Improved product (reference data: S12571 series) (M=1.25 × 106) 50 mV 50 mV (M=1.25 × 106) 10 ns 10 ns www.hamamatsu.com 1 S12572-010, -015C/P MPPC (multi-pixel photon counter) Structure Parameter Effective photosensitive area Pixel pitch Number of pixels Geometrical fill factor Package Window Window refractive index Symbol - S12572 -010C -010P -015C 3×3 10 90000 33 Ceramic Surface mount type Epoxy resin 1.59 1.55 -015P 3×3 15 40000 53 Ceramic Surface mount type Epoxy resin 1.59 1.55 Unit mm μm % - Absolute maximum ratings (Ta=25 °C) Parameter Symbol Operating temperature*1 Storage temperature*1 Topr Tstg Reflow soldering conditions*2 Tsol Soldering conditions - S12572 -010C -010P -015C -015P -20 to +60 -20 to +60 -20 to +80 -20 to +80 Peak temperature: Peak temperature: 240 °C, twice (see P.6) 240 °C, twice (see P.6) 350 °C max. once, 350 °C max. once, 3 s max.*3 3 s max.*3 Unit °C °C - *1: No condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: JEDEC level 5a *3: At least 1 mm away from lead root Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) S12572 Parameter Symbol Spectral response range Peak sensitivity wavelength Photon detection efficiency (λ=λp)*4 Typ. Dark count*5 Max. Time resolution (FWHM)*6 Terminal capacitance Gain Gain temperature coefficient Breakdown voltage Recommended operating voltage Temperature coefficient of recommended operating voltage λ λp 320 to 900 470 320 to 900 460 nm nm PDE 10 25 % Ct M ΔTM VBR Vop 1000 2000 500 320 1.35 × 105 1.6 × 103 65 ± 10 VBR + 4.5 1000 2000 400 320 2.3 × 105 3.5 × 103 65 ± 10 VBR + 4.0 ΔTVop 60 60 - -010C -010P -015C -015P Unit kcps ps pF /°C V V mV/°C *4: Photon detection efficiency does not include crosstalk or afterpulses. *5: Threshold=0.5 p.e. *6: Single photon level Note: The above characteristics were measured at the operating voltage that yields the gain listed in this catalog. (Refer to the data attached to each product.) The last letter of each type number indicates the package type (C: ceramic, P: surface mount type). 2 S12572-010, -015C/P MPPC (multi-pixel photon counter) Photon detection efficiency vs. wavelength S12572-010C/P (Typ.=25 °C, Vop=VBR + 4.5 V) 40 30 20 10 0 300 400 500 600 700 800 (Typ.=25 °C, Vop=VBR + 4.0 V) 50 Photon detection efficiency (%) 50 Photon detection efficiency (%) S12572-015C/P 40 30 20 10 0 300 900 400 500 Wavelength (nm) 600 700 800 900 Wavelength (nm) KAPDB0225EA KAPDB0224EA Photon detection efficiency does not include crosstalk or afterpulses. Gain vs. overvoltage Photon detection efficiency vs. overvoltage (Typ. Ta=25 °C) S12572-015C 4 × 105 Gain 3 × 105 2 × 105 1 × 105 S12572-010C (Typ. Ta=25 °C, λ=408 nm) 60 Photon detection efficiency (%) 5 × 105 50 S12572-015C 40 30 20 10 S12572-010C 0 0 0 1 2 3 4 5 6 7 8 9 Overvoltage (V) 0 1 2 3 4 5 6 7 8 Overvoltage (V) KAPDB0253EA KAPDB0254EB 3 MPPC (multi-pixel photon counter) S12572-010, -015C/P Crosstalk probability vs. overvoltage (Typ. Ta=25 °C) 50 Crosstalk probability (%) 40 S12572-015C 30 20 S12572-010C 10 0 0 1 2 3 4 5 6 7 8 Overvoltage (V) KAPDB0255EB Because the high-speed, wide dynamic range MPPC has a small pixel capacitance, the gain is smaller than the MPPC for general measurement. The gain and photon detection efficiency are increased by applying the higher operating voltage. Please use it with the appropriate operating voltage because the crosstalk increases at the same time. 4 S12572-010, -015C/P MPPC (multi-pixel photon counter) Dimensional outlines (unit: mm) S12572-010/-015C S12572-010/-015P 6.55 ± 0.15 4.35 1.45 ± 0.15 0.925 ± 0.15 Photosensitive area 3.0 × 3.0 3.85 * 0.3 Photosensitive surface 0.425 ± 0.15 5.9 ± 0.15 * 0.33 Photosensitive area 3.0 × 3.0 Epoxy resin 1.0 1.0 Epoxy resin 2.2 2.0 ± 0.2 0.45 ± 0.15 4.25 * Tolerance unless otherwise noted: ±0.1 0.46 Lead (2.0) 2.54 ± 0.15 6.0 ± 0.5 Photosensitive surface Index mark ɸ0.2 KAPDA0144EA Tolerance unless otherwise noted: ±0.2 * Metal electrodes connecting to the internal electrodes are exposed on the sides of the ceramic package. To avoid short circuits, never allow other conductors to come in contact with these metal electrodes. KAPDA0143EA Connection example +V 1 kΩ 0.1 μF MPPC Signal Amplifier KAPDC0024EB 5 S12572-010, -015C/P MPPC (multi-pixel photon counter) Measured example of temperature profile with our hot-air reflow oven for product testing 300 °C 240 °C max. Temperature 220 °C 190 °C 170 °C Preheat 70 to 90 s Soldering 40 s max. Time KPICB0171EA ∙ This surface mount type product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 25°C or less and a humidity of 60% or less, and perform soldering within 24 hours. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. Precautions ∙ If necessary, incorporate appropriate protective circuits in power supplies, devices, and measuring instruments to prevent overvoltage and overcurrent. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products ∙ Surface mount type products MPPC is a registered trademark of Hamamatsu Photonics K.K. Information described in this material is current as of December, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No.KAPD1045E04 Dec. 2015 DN 6