Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
PMSS3904
NPN switching transistor
Product data sheet
Supersedes data of 1997 Sep 03
1999 May 27
NXP Semiconductors
Product data sheet
NPN switching transistor
PMSS3904
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 40 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• General purpose switching and amplification
• Telephony and professional communication equipment.
DESCRIPTION
3
handbook, halfpage
NPN switching transistor in an SC-70 (SOT323) plastic
package. PNP complement: PMSS3906.
3
1
MARKING CODE
2
MARKING CODE(1)
TYPE NUMBER
1
∗04
PMSS3904
2
Top view
MAM062
Note
Fig.1
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Simplified outline (SC-70; SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 27
2
NXP Semiconductors
Product data sheet
NPN switching transistor
PMSS3904
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
625
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
−
50
nA
−
10
μA
−
50
nA
IC = 0.1 mA
40
−
IC = 1 mA
70
−
IC = 10 mA
100
300
IC = 50 mA; note 1
60
−
IC = 100 mA; note 1
30
−
IC = 10 mA; IB = 1 mA
−
200
mV
IC = 50 mA; IB = 5 mA; note 1
−
300
mV
IC = 10 mA; IB = 1 mA
650
850
mV
IC = 50 mA; IB = 5 mA; note 1
−
950
mV
IC = 0; VEB = 5 V
hFE
DC current gain
VCE = 1 V; see Fig.2
VBEsat
base-emitter saturation voltage
UNIT
IE = 0; VCB = 30 V; Tj = 150 °C
emitter cut-off current
collector-emitter saturation voltage
MAX.
IE = 0; VCB = 30 V
IEBO
VCEsat
MIN.
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
4
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
12
pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz
180
−
MHz
F
noise figure
IC = 100 μA; VCE = 5 V; RS = 1 kΩ
f = 10 Hz to 15.7 KHz
−
5
dB
−
110
ns
−
50
ns
−
60
ns
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
td
delay time
ICon = 10 mA; IBon = 1 mA;
IBoff = − 1 mA; VCC = 3 V;
VBB = −1.9 V
tr
rise time
toff
turn-off time
−
1200
ns
ts
storage time
−
1000
ns
tf
fall time
−
200
ns
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1999 May 27
3
NXP Semiconductors
Product data sheet
NPN switching transistor
PMSS3904
MBH724
300
handbook, full pagewidth
VCE = 5 V
hFE
200
100
0
10−2
10−1
1
102
10
Fig.2 DC gain current; typical values.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 5 V; T = 500 μs; tp = 10 μs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
1999 May 27
4
oscilloscope
IC (mA)
103
NXP Semiconductors
Product data sheet
NPN switching transistor
PMSS3904
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 May 27
REFERENCES
IEC
JEDEC
EIAJ
SC-70
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
NPN switching transistor
PMSS3904
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any inconsistency or conflict between information
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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accepts no liability for inclusion and/or use of NXP
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 May 27
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/04/pp7
Date of release: 1999 May 27
Document order number: 9397 750 05965
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