VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P Datasheet

VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
MTP PressFit Power Module
Three Phase Bridge, 45 A to 100 A
FEATURES
• Low VF
• Low profile package
• Direct mounting to heatsink
• PressFit pins technology
• Low junction to case thermal resistance
• 3500 VRMS insulation voltage
• Designed and qualified for industrial level
• PressFit pins locking technology. Patent # US.263.820 B2
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MTP PressFit
APPLICATIONS
• Power conversion machines
• Welding
• UPS
PRODUCT SUMMARY
IO
45 A to 100 A
VRRM
1600 V
Package
MTP PressFit
Circuit
Three phase bridge
• SMPS
• Motor drives
• General purpose and heavy duty application
DESCRIPTION
The new MTP module is easy to use thanks to solder less
method for contacting PressFit pins to the PCB. The low
profile package has been specifically conceived to
maximize space saving and optimize the electrical layout of
the application specific power supplies.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IO
IFSM
I2t
VALUES
40MT
VALUES
70MT
VALUES
100MT
UNITS
45
75
100
A
TC
100
80
80
°C
50 Hz
270
380
450
60 Hz
280
398
470
CHARACTERISTICS
50 Hz
365
724
1013
60 Hz
325
660
920
3650
7240
10 130
I2t
VRRM
TStg
TJ
1600
Range
-40 to +125
-40 to +150
A
A2s
A2s
V
°C

PATENT(S): www.vishay.com/patents 
This Vishay product is protected by one or more United States and International patents.
Revision: 16-Jun-16
Document Number: 94870
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE CODE
REVERSE VOLTAGE
V
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
160
1600
VS-40MT160P-P, VS-70MT160P-P,
VS-100MT160P-P
VRSM, MAXIMUM
IRRM MAXIMUM AT
NON-REPETITIVE PEAK
TJ = 150 °C
V
mA
1700
5
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum DC output
current at case
temperature
IO
TEST CONDITIONS
IFSM
75
100
A
80
°C
No voltage
reapplied
270
380
450
280
398
470
100 % VRRM
reapplied
225
320
380
240
335
400
365
724
1013
325
660
920
100 % VRRM
reapplied
253
512
600
240
467
665
t = 0.1 ms to 10 ms, no voltage reapplied
3650
7240
10 130
t = 8.3 ms
t = 10 ms
No voltage
reapplied
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2t for fusing
I2t
Value of threshold voltage
VF(TO)
Slope resistance
rt
Maximum forward voltage
drop
VFM
UNITS
80
t = 10 ms
I2t
VALUES
100MT
45
t = 8.3 ms
Maximum I2t for fusing
VALUES
70MT
100
120° rect. to conduction angle
t = 10 ms
Maximum peak, one cycle
forward, non-repetitive on
state surge current
VALUE
40MT
Initial 
TJ = TJ maximum

A2s
A2s
0.78
0.82
0.75
V
14.8
9.5
8.1
m
TJ = 25 °C; tp = 400 μs single junction 
(40MT, Ipk = 40 A) (70MT, Ipk = 70 A) (100MT, Ipk = 100 A)
1.45
1.45
1.51
V
TEST CONDITIONS
40MT
70MT
TJ maximum
INSULATION TABLE
PARAMETER
SYMBOL
RMS insulation voltage
VINS
TJ = 25 °C, all terminal shorted, f = 50 Hz, t = 1 s
100MT
3500
UNITS
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance, case to
heatsink per module
Mounting torque to heatsink
± 10 %
Approximate weight
SYMBOL
TEST CONDITIONS
40MT
70MT
TJ
-40 to +150
TStg
-40 to +125
100MT
UNITS
°C
RthJC
RthCS
DC operation per module
0.27
0.23
0.19
DC operation per junction
1.6
1.38
1.14
120° rect. condunction angle per module
0.38
0.29
0.22
120° rect. condunction angle per junction
2.25
1.76
1.29
Mounting surface smooth, flat and greased
heatsink compound thermal conductivity
= 0.42 W/mK
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound. Lubricated threads
K/W
0.1
4
Nm
65
g
Revision: 16-Jun-16
Document Number: 94870
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
CLEARANCE AND CREEPAGE DISTANCES
PARAMETER
TEST CONDITIONS
MTP PressFit
Creepage distance
Shortest distance along external surface of the insulating material 
between terminals which are not internally short circuited together
40MT...P
R thJC (DC) = 0.27 K/W
Per Module
150
140
130
120
120 ˚
(Rect)
110
100
90
80
0
10
20
30
40
50
Total Output Current (A)
Peak Half Sine Wave On-State Current (A)
160
250
300
Instantaneous On-State Current (A)
TJ = 25 ˚C
TJ = 150 ˚C
100
10
40MT...P
1
0
1
2
3
4
5
6
Instantaneous On-State Voltage (V)
Fig. 2 - On-State Voltage Drop Characteristics
mm
13
At any rated load condition and with
rated VRRM applied following surge.
Initial Tj = 150 ˚ C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
40MT...P
Per Junction
50
1
10
100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 3 - Maximum Non-Repetitive Surge Current
Fig. 1 - Current Rating Characteristics
1000
UNITS
10.2
Peak Half Sine Wave On-State Current (A)
Maximum Allowable Case Temperature (°C)
Clearance
External shortest distances in air between terminals 
which are not internally short circuited together
Maximum non repetitive surge current
vs. pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 150 ˚ C
No voltage reapplied
Rated VRRM reapplied
250
200
150
100
40MT...P
Per Junction
50
0.01
0.1
1
Pulse Train Duration(s)
Fig. 4 - Maximum Non-Repetitive Surge Current
Revision: 16-Jun-16
Document Number: 94870
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
250
1
0.
=
A
hS
Rt
W
K/
200
2
0.
Tj = 150˚C
0.
3
K
0.5 /W
K/
W
0.4
K/
W
a
elt
-D
R
120˚
(Rect)
150
W
K/
Maximum Total Power Loss (W)
40MT...P
1K
/W
100
50
0
0
10
20
30
40
Total Output Current (A)
50
0
30
60
90
120
150
60
Maximum Allowable Ambient Temperature (°C)
160
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink)
70MT...P
R thJC (DC) = 0.23 K/W
Per Module
150
140
130
120
110
120˚
(Rect)
100
90
80
70
60
0
200
150
Tj = 25˚C
Tj = 150˚C
100
10
70MT...P
1
2
3
4
70MT...P
Per Junction
100
1
10
100
Fig. 8 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
1000
Instantaneous On-state Current (A)
250
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 6 - Current Rating Characteristics
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
300
10 20 30 40 50 60 70 80
Total Output Current (A)
0
350
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
400
350
300
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T j = 150˚C
No Voltage Reapplied
Rated V rrm Reapplied
250
200
150
100
70MT...P
Per Junction
50
0.01
0.1
1
Pulse Train Duration(s)
Fig. 9 - Maximum Non-Repetitive Surge Current
Revision: 16-Jun-16
Document Number: 94870
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
300
a
elt
-D
R
120˚
(Rect)
150
W
K/
200
1
0.
0.
2
K/
W
0.3
K/
0.4 W
K/W
0.5
K/W
Tj = 150˚C
=
Maximum Total Power Loss (W)
A
hS
Rt
70MT...P
250
1K
/W
100
50
0
0
20
40
Total Output Current (A)
60
0
80
30
60
90
120
150
Maximum Allowable Ambient Temperature (°C)
140
100MT...P
R thJC (DC) = 0.19 K/W
120
Per Module
100
80
120˚
(Rect)
60
40
40 50 60 70 80 90 100 110 120 130
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink)
100MT...P
100
10
Tj = 150˚C
Tj = 25˚C
2
2.5
3
300
250
200
100MT...P
Per Junction
150
100
10
100
Fig. 13 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
Instantaneous On-state Current (A)
1000
1.5
350
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 11 - Current Rating Characteristics
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1
Total Output Current (A)
1
0.5
400
3.5
4
Instantaneous On-state Voltage (V)
Fig. 12 - On-State Voltage Drop Characteristics
500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
400
Initial T j = 125˚C
No Voltage Reapplied
350
Rated V rrm Reapplied
450
300
250
200
150
100
50
100MT...P
Per Junction
0
0.01
0.1
1
10
Pulse Train Duration(s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Revision: 16-Jun-16
Document Number: 94870
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
Maximum Total Power Loss (W)
500
Rt
hS
0.0 A =
5K 0
.0
0.1 /W 25
K/
K/
W
W
100MT...P
Tj = 150˚C
400
300
120˚
(Rect)
200
0.2
K/W
0.3
K/W
-D
elt
a
R
0.5
K/W
1 K/W
100
0
0
20
40
60
80
Total Output Current (A)
0
30
60
90
120
150
100
Maximum Allowable Ambient Temperature (°C)
Transient Thermal Impedance Z thJC (K/W)
Fig. 15 - Current Rating Nomogram (1 Module Per Heatsink)
10
Steady State Value
RthJC per junction =
1.6 K/W (40MT...P)
1
1.38 K/W (70MT...P
1.14 K/W (100MT...P)
40MT...P
70MT...P
100MT...P
DC Operation)
0.1
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 16 - Thermal Impedance ZthJC Characteristics
Revision: 16-Jun-16
Document Number: 94870
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
0
MT
160
1
2
3
4
5
P
-P
6
1
-
Vishay Semiconductors product
2
-
Current rating code
3
-
Circuit configuration code: 0 = Three Phase Bridge
4
-
Package indicator
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
Pinout code (PressFit pins)
4 = 45 A
7 = 75 A
10 = 100 A
CIRCUIT CONFIGURATION
MTP PressFit
Three Phase Bridge
D1
D3
D5
D2
D4
D6
A1
B1
C1
A7
A6
E7
F7
L7
M7
I1
L1
M1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95595
Revision: 16-Jun-16
Document Number: 94870
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
MTP Three Phase PressFit
20 ±0,2
2,5
13,5 ±0,2
17 ±0,35
3 ±0,15
DIMENSIONS in millimeters
45 ±0,3
39,5 ±0,2
x8
22,8 ±0,15
27,5 ±0,2
31,8 ±0,2
33,2 ±0,3
1
7,6 ±0,15
2,
1,3
,6
R2
6
X
45
°
3 ±0,15
12 ±0,15
30 ±0,15
0,4
Typical Pin position
Revision: 18-Mar-14
48,7 ±0,3
63,5 ±0,3
Document Number: 95595
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000