16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 S11299-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product (S5668 series). The back-illuminated photodiode array is also simple to handle and easily couples to scintillators without having to worry about wire damage because there are no bonding wires and photosensitive areas on the back side. The S11299 series is compatible with dual energy imaging because it can be used in combination with our S11212 series [board size: 25.4 (W) × 20.0 (H) mm] to configure an upper and lower two layer structure capable of simultaneous detection of high and low X-rays. Features Applications Spectral response range: 340 to 1100 nm (S11299-021) X-ray non-destructive inspection, etc. Element size: 1.175 (W) × 2.0 (H) mm/one element Element pitch: 1.575 mm (× 16 pixels) Mounted on board size: 25.4 (W) × 10.2 (H) mm Long and narrow format by multiple arrays Supports dual energy imaging (When used in an upper and lower two-layer combination. See page 7.) Selection guide S11299-021 Type None* Scintillator Afterglow - Crosstalk - S11299-121 CsI(Tl) Large Low S11299-321 GOS ceramic Small Low S11299-421 Phosphor sheet Small May occur. Type no. Application example General photometry X-ray non-destructive inspection of slow-moving objects (baggage inspection, etc.) X-ray non-destructive inspection of fast-moving objects (baggage inspection, etc.) X-ray non-destructive inspection (at low X-ray energy) * This photodiode array as it is does not function as an X-ray detector. An appropriate scintillator or phosphor sheet should be added at user’s side. Precautions CsI(TI) scintillator of the S11299-121 has deliquescence. Avoid storing or using the S11212-121 at high humidity. www.hamamatsu.com 1 16-element Si photodiode arrays Feature S11299 series 01 Back-illuminated type The S11299 series photodiode arrays have a back-illuminated type structure. This structure uses no fragile easily-broken bonding wires since the photodiode array output terminals are directly connected by bump bonding to the electrodes on the board. This structure is robust since the board wiring is laid out within the board. The photodiode surface for coupling the scintillator has no bonding wires or photosensitive areas, so there is less risk of damaging the photodiode array. The S11299 series is also resistant to effects from temperature cycle and so ensures high reliability. Cross-section diagram (comparison between front-illuminated type and back-illuminated type) Front-illuminated type (previous product) X-ray Back-illuminated type (New) Scintillator X-ray Scintillator Protective resin Photodiode Active area Bonding wire Active area Photodiode Bump electrode KMPDA0280EA Feature 02 Multiple applications Feature 03 Superb uniformity The S11299 series supports dual energy imaging. To simultaneously Our unique sensor design minimizes variations in sensitivity between detect high energy X-rays and low energy X-rays, the S11299 series photodiode elements as well as at the sensor ends. The S11299 se- is designed so that two photodiode arrays, each with a different ries offers significantly improved sensitivity uniformity compared to scintillator, are combined in an upper and lower two-layer format. our previous product (S5668 series) and so provides optimal X-ray Arranging two or more S11299 series photodiode arrays in a row in images. close proximity also forms a line sensor that allows measurement of long objects. Uniformity Sensor structure example Relative sensitivity (%) Two-layer combination Multi-array format (Photo shows S11212-121.) (Typ. Ta=25 °C) 110 105 S11299 series 100 95 Previous product 90 85 80 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Element no. KMPDB0353EA 2 16-element Si photodiode arrays S11299 series Absolute maximum ratings Parameter Reverse voltage Operating temperature*1 Storage temperature*1 Symbol VR Max. Topr Tstg S11299-121/-321/-421 10 -10 to +60 -20 to +70 S11299-021 10 -20 to +60 -20 to +80 Unit V °C °C *1: No condensation Electrical and optical characteristics (Ta=25 °C, per element, S11299-021 characteristics except X-ray sensitivity) Parameter Spectral response range Peak sensitivity wavelength Symbol λ λp Photo sensitivity S X-ray sensitivity Condition λ=540 nm λ=λp *2 IscX Dark current ID Rise time tr Terminal capacitance Ct S11299-021 S11299-121 S11299-321 S11299-421 VR=10 mV VR=0 V, RL=1 kΩ 10 to 90%, λ=658 nm Min. 380 550 - Typ. 340 to 1100 920 420 610 6.0 3.5 3.0 5 Max. 460 670 30 - 6.5 - μs 30 40 50 pF VR=0 V, f=10 kHz Unit nm nm mA/W nA pA * These are reference (X-ray tube voltage 120 kV, tube current 1.0 mA, aluminum fi lter t=6 mm, distance 830 mm). X-ray sensitivity depends on the X-ray equipment operating and setup conditions. Spectral response (characteristics without scintillator) (Typ. Ta=25 °C) 0.8 QE=100 % Photo sensitivity (A/W) 0.7 S11299-021 0.6 0.5 Previous product 0.4 0.3 S11299-121 S11299-321 S11299-421 0.2 0.1 0 200 400 600 800 1000 1200 Wavelength (nm) * Spectral response characteristics of the S11299-121/ -321/-421 include the transmittance and reflectance of the adhesive resin used to bond a scintillator. KMPDB0351EA 3 16-element Si photodiode arrays S11299 series Emission spectrum of scintillator and spectral response S11299-121 S11299-321 (Typ.) (Typ.) 100 100 100 QE withcut scintillator 80 Emission spectrum of CsI(TI) scintillator 60 60 40 40 20 20 0 0 200 400 600 800 1000 0 1200 Relative emission output (%) 80 Quantum efficiency (%) Relative emission output (%) QE withcut scintillator 80 80 Emission spectrum of ceramic scintillator 60 60 40 40 20 20 0 0 Wavelength (nm) 200 400 600 800 1000 Quantum efficiency (%) 100 0 1200 Wavelength (nm) KSPDB0282EB KSPDB0281EB Scintillator specifications Parameter Peak emission wavelength X-ray absorption coefficient Refractive index Decay constant Afterglow Density Color Sensitivity non-uniformity Condition 100 keV at peak emission wavelength 100 ms after X-ray turn off CsI(TI) 560 10 1.7 1 0.3 4.51 Transparent ±10 Ceramic 512 7 2.2 3 0.01 7.34 Light yellow-green ±5 Unit nm cm-1 μs % g/cm3 % 4 16-element Si photodiode arrays S11299 series Dimensional outlines (unit: mm, tolerance: ±0.1 mm unless otherwise noted) S11299-021 +0 25.4 -0.3 P1.575 × 15 = 23.625 +0.3 1.2 -0.2 2.0 7.62 ± 0.1 10.2 ± 0.2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 4.0 Active area 1.175 × 2.0 KC (18 ×) 0.45 Fe Ni Co pin 1.0 ± 0.15 1.575 Photodiode chip Glass epoxy board KC 3.5 ± 0.5 2.54 P 2.54 × 8 = 20.32 KMPDA0272EA S11299-121 +0 25.4 -0.3 +0.3 1.2 -0.2 1.575 4.0 KC 2.54 CsI(Tl) 3.0t Photodiode chip 2.0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Active area 1.175 × 2.0 3.1 [CsI(Tl)] 7.62 ± 0.1 10.2 ± 0.2 KC (18 ×) 0.45 Fe Ni Co pin 1.0 ± 0.15 P1.575 × 15 = 23.625 Glass epoxy board 3.5 ± 0.5 P 2.54 × 8 = 20.32 KMPDA0276EA 5 16-element Si photodiode arrays S11299 series S11299-321 +0 25.4 -0.3 +0.3 1.2 -0.2 1.575 1.36 GOS ceramic 1.3t Photodiode chip 2.0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Active area 1.175 × 2.0 Glass epoxy board 3.1(GOS ceramic) 7.62 ± 0.1 10.2 ± 0.2 KC (18 ×) 0.45 Fe Ni Co pin 1.0 ± 0.15 P1.575 × 15 = 23.625 KC 2.54 P 2.54 × 8 = 20.32 3.5 ± 0.5 KMPDA0277EA S11299-421 +0 25.4 -0.3 +0.3 1.2 -0.2 1.575 0.75 KC 2.54 P 2.54 × 8 = 20.32 3.0 (Phosphor sheet) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Phosphor sheet 0.3t Photodiode chip 2.0 7.62 ± 0.1 10.2 ± 0.2 KC Active area 1.175 × 2.0 (18 ×) 0.45 Fe Ni Co pin 1.0 ± 0.15 P1.575 × 15 = 23.625 Glass epoxy board 3.5 ± 0.5 KMPDA0278EA 6 16-element Si photodiode arrays S11299 series Lineup of Si photodiode arrays for X-ray non-destructive inspection Scintillator Type no. Number of elements Element pitch (mm) Element size (mm) Board size (mm) Suitable X-ray energy Photo 25.4 (W) × 20.0 (H) S11212-021* -* None* S11299-021* 25.4 (W) × 10.2 (H) S11212-121 25.4 (W) × 20.0 (H) Csl(TI) 25.4 (W) × 10.2 (H) S11299-121 16 1.575 High-energy 1.175 (W) × 2.0 (H) S11212-321 25.4 (W) × 20.0 (H) S11299-321 25.4 (W) × 10.2 (H) S11212-421 25.4 (W) × 20.0 (H) GOS ceramic Phosphor sheet Low-energy S11299-421 25.4 (W) × 10.2 (H) * These photodiode arrays as they are do not function as X-ray detectors. Appropriate scintillators or phosphor sheets should be added at user’s side. The S11212/S11299 series are also compatible with other scintillators than those listed in the above table (custom made devices). Please consult our sales office. Combination examples (for dual energy imaging) Dual energy imaging is a technique that acquires and superimposes two types of data in a single scan by using X-rays at two different energy levels (high energy and low energy). Two photodiode arrays with scintillators are used: one at the upper stage and the other at the lower stage. The upper stage is used for low energy detection, and the lower stage for high energy detection. Arranging two or more of these devices in a row also forms a line sensor for dual energy imaging. This combination uses the S11212 series in both upper and lower stages. Upper stage: low-energy photodiode array X-ray · [Upper stage] S11212-421 + [Lower stage] S11212-121 · [Upper stage] S11212-421 + [Lower stage] S11212-321 Lower stage: high-energy photodiode array This combination uses the S11212 series in the upper stage and the S11299 series in the lower stage · [Upper stage] S11212-421 + [Lower stage] S11299-121 Upper stage: low-energy photodiode array X-ray · [Upper stage] S11212-421 + [Lower stage] S11299-321 Lower stage: high-energy photodiode array Note: For details on the S11212 series, refer to the S11212 series datasheet. 7 16-element Si photodiode arrays S11299 series Information described in this material is current as of May, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1128E03 Jul. 2011 DN 8