Si photodiode S4349 Quadrant Si PIN photodiode The S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing such as for laser beam axis alignment. Features Applications Quadrant (2 × 2) element format Laser beam axis alignment Low crosstalk: 2% max. Position sensing Wide spectral response range: 190 to 1000 nm High-speed response: fc=20 MHz TO-5 metal package Structure Parameter Window material Photosensitive area Element gap Symbol A - Value Quartz glass 3.0/4 elements 100 Unit mm μm Value 20 -20 to +60 -55 to +80 Unit V °C °C Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR max Topr Tstg Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, per 1 element) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Dark current Temperature coefficient of ID Cutoff frequency Terminal capacitance Noise equivalent power Crosstalk Symbol λ λp S ID TCID fc Ct NEP CL Condition λ=λp VR=5 V VR=5 V, RL=50 Ω λ=780 nm, -3 dB VR=5 V, f=1 MHz VR=5 V, λ=λp VR=5 V, λ=780 nm Typ. 190 to 1000 720 0.45 0.01 1.12 Max. 0.2 - Unit nm nm A/W nA times/°C 20 - MHz 25 4.0 × 10-15 - 2 pF W/Hz1/2 % www.hamamatsu.com 1 Si photodiode S4349 Spectral response Photosensitivity temperature characteristics (Typ. Ta=25 °C) 0.8 (Typ.) +1.5 Temperature coefficient (%/°C) Photosensitivity (A/W) 0.7 0.6 0.5 0.4 0.3 0.2 +1.0 +0.5 0 0.1 0 190 400 600 800 -0.5 190 1000 400 600 800 Wavelength (nm) Wavelength (nm) KMPDB0126EA KMPDB0127EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 1 nA 1000 (Typ. Ta=25 °C, f=1 MHz) 1 nF Terminal capacitance Dark current 100 pA 10 pA 1 pA 100 pF 10 pF 1 pF 100 fA 10 fA 0.01 0.1 1 10 100 Reverse voltage (V) 100 fF 0.1 1 10 100 Reverse voltage (V) KMPDB0128EA KMPDB0129EA 2 Si photodiode S4349 Dimensional outline (unit: mm) 9.2 ± 0.2 8.1 ± 0.2 D B C 4.1 ± 0.2 Photosensitive area 0.1 Details of photodiode ɸ0.45 lead 13.5 2.95 Photosensitive surface 3.0 A 0.1 Window 5.9 ± 0.1 ɸ5.08 ± 0.2 Anode D Anode A Cathode (case) Anode B Anode C Cathode (case) NC KMPDA0114EA Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like. 3 Si photodiode S4349 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1007E03 Oct. 2015 DN 4