PHOTODIODE Si PIN photodiode S5980, S5981, S5870 Multi-element photodiodes for surface mounting Features Applications l Large active area l Laser beam axis alignment l Level meters l Pointing devices, etc. S5980: 5 × 5 mm S5981: 10 × 10 mm S5870: 10 × 10 mm l Chip carrier package suitable for surface mounting Facilitates automated surface mounting by solder reflow l Thin package: 1.26 mmt l Photo sensitivity: 0.72 A/W (λ=960 nm) ■ General ratings Parameter Symbol Window material G ap betw een elem ents Active area A S5980 S5981 Resin coating 30 □10.0/4 elements □5.0/4 elements S5870 Unit µm mm □10.0/2 elements ■ Absolute maximum ratings Parameter Symbol Reverse voltage VR Max. O perating tem perature Topr Storage temperature Tstg S5980 S5981 30 -40 to +100 -40 to +125 S5870 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C, per 1 element) Parameter Symbol Condition S5980 Typ. Max. 320 to 1100 - Spectral response range λ Peak sensitivity 960 λp wavelength Photo sensitivity S 0.72 λ=λp Dark current ID VR=10 V 0.3 Tem perature coefficient of I D TCID 1.15 V R =10 V, R L =50 Ω, -3 dB Cut-off frequency fc 25 Term inal capacitance Ct VR=10 V, f=1 MHz 10 N oise equivalent power NEP VR=10 V, λ=λp 1.4 × 10 -14 Note) S5980: For mass production, order unit is 100 pieces. S5981, S5870: For mass production, order unit is 50 pieces. S5981 Typ. Max. 320 to 1100 - S5870 Typ. Max. 320 to 1100 - Unit nm - 960 - 960 - nm 2 - 0.72 0.6 1.15 20 35 1.9 × 10 -14 4 - 0.72 2 1.15 10 50 3.5 × 10 -14 10 - A/W nA times/°C MHz pF W/Hz1/2 Precautions for use ● The light input window of this product uses soft silicone resin. Avoid touching the window to keep it from grime and damage that can decrease sensitivity. External force applied to the resin surface may deform or cut off the wires, so do not touch the window to prevent such troubles. ● Use rosin flux when soldering, to prevent the terminal lead corrosion. Reflow oven temperature should be at 260 °C maximum for 5 seconds maximum time under the conditions that no moisture absorption occurs. Reflow soldering conditions differ depending on the type of PC board and reflow oven. Carefully check these conditions before use. ● Silicone resin swells when it absorbs organic solvent, so do not use any solvent other than alcohol. ● Avoid unpacking until you actually use this product to prevent the terminals from oxidation and dust deposits or the coated resin from absorbing moisture. When the product is stored for 3 months while not unpacked or 24 hours have elapsed after unpacking, perform baking in nitrogen atmosphere at 150 °C for 3 to 5 hours or at 120 °C for 12 to 15 hours before use. 1 S5980, S5981, S5870 Si PIN photodiode ■ Spectral response ■ Photo sensitivity temperature characteristic ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 0.6 0.5 0.4 0.3 0.2 0.1 800 +0.5 WAVELENGTH (nm) 400 600 S5980 800 1 pA 0.01 1000 10 100 REVERSE VOLTAGE (V) KMPDB0124EA ■ Dimensional outlines (unit: mm) (Typ. Ta=25 ˚C, f=1 MHz) S5981 1 KMPDB0123EA ■ Terminal capacitance vs. reverse voltage 1 nF 0.1 WAVELENGTH (nm) KMPDB0122EA S5980 S5870 8.8 ± 0.2 (4 ×) R0.3 ACTIVE AREA 100 pF 10.6 ± 0.2 a d b c 10 pF 1 pF 100 fF 0.1 1 10 SILICONE RESIN 0.46 PHOTOSENSITIVE SURFACE 100 0.03 DETAILS OF ACTIVE AREA ANODE b NC CATHODE COMMON NC ANODE c ANODE d NC NC NC ANODE a 2.5 S5980 1.26 ± 0.15 INDEX MARK 1.5 TERMINAL CAPACITANCE 100 pA 10 pA 0 -0.5 190 1000 S5981 0.03 600 S5870 1 nA +1.0 5.0 400 (Typ. Ta=25 ˚C) 10 nA DARK CURRENT PHOTO SENSITIVITY (A/W) 0.7 200 (Typ. ) +1.5 TEMPERATURE COEFFICIENT (%/˚C) 0.8 1.5 REVERSE VOLTAGE (V) KMPDB0125EA (10 ×) 0.6 1.27 Burrs shall protrude no more than 0.3 mm on any side of package. KMPDA0036EB S5981 S5870 14.5 ± 0.2 14.5 ± 0.2 (4 ×) R0.3 ACTIVE AREA a 1.26 ± 0.15 0.46 DETAILS OF ACTIVE AREA 3.0 3.0 ANODE b NC CATHODE COMMON NC ANODE c ANODE d NC NC NC ANODE a 2.54 SILICONE RESIN 0.03 1.8 PHOTOSENSITIVE SURFACE (10 ×) 1.2 2.54 Burrs shall protrude no more than 0.3 mm on any side of package. b 10.0 16.5 ± 0.2 0.03 10.0 c DETAILS OF ACTIVE AREA 1.8 (10 ×) 1.2 d b 1.8 1.26 ± 0.15 SILICONE RESIN a 0.03 1.8 PHOTOSENSITIVE SURFACE 0.46 16.5 ± 0.2 (4 ×) R0.3 ACTIVE AREA NC ANODE a CATHODE COMMON ANODE b NC NC NC NC NC NC Burrs shall protrude no more than 0.3 mm on any side of package. KMPDA0037EA KMPDA0113EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1012E04 Jun. 2010 DN