Data Sheet

SO
T2
23
PBHV8560Z
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
13 March 2015
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223
(SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9560Z
2. Features and benefits
•
•
•
•
Low collector-emitter saturation voltage VCEsat
High collector current capability
High collector current gain hFE at high IC
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
•
Electronic ballast for fluorescent lighting
LED driver for LED chain module
LCD backlighting
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
600
V
IC
collector current
-
-
0.5
A
hFE
DC current gain
70
135
-
VCE = 10 V; IC = 50 mA; Tamb = 25 °C
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PBHV8560Z
NXP Semiconductors
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
B
base
2
C
collector
3
E
emitter
4
C
collector
Simplified outline
Graphic symbol
2, 4
4
1
1
2
3
SC-73 (SOT223)
3
sym016
6. Ordering information
Table 3.
Ordering information
Type number
PBHV8560Z
Package
Name
Description
Version
SC-73
plastic surface-mounted package with increased heatsink; 4
leads
SOT223
7. Marking
Table 4.
Marking codes
Type number
Marking code
PBHV8560Z
HV856Z
PBHV8560Z
Product data sheet
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PBHV8560Z
NXP Semiconductors
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
600
V
VCEO
collector-emitter voltage
open base
-
600
V
VCESM
collector-emitter peak voltage
VBE = 0 V
-
600
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
0.5
A
Ptot
total power dissipation
[1]
-
0.65
W
[2]
-
1.4
W
Tamb ≤ 25 °C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
aaa-013425
1.6
Ptot
(W)
(1)
1.2
0.8
(2)
0.4
0
-60
20
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, standard footprint
Fig. 1.
100
Tamb (°C)
180
2
Power derating curves
PBHV8560Z
Product data sheet
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PBHV8560Z
NXP Semiconductors
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
Min
Typ
Max
Unit
[1]
-
-
190
K/W
[2]
-
-
89
K/W
-
-
20
K/W
thermal resistance
from junction to solder
point
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-013426
103
Zth(j-a)
(K/W)
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
duty cycle = 1
102
0.75
0.5
0.33
10
0.2
0.1
0.05
0.02
1
0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, single-sided copper, tin-plated and standard footprint.
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013427
102
0.75
Zth(j-a)
(K/W)
duty cycle = 1
0.5
0.33
0.2
10
0.1
0.05
0.02
1
0.01
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
2
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV8560Z
Product data sheet
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PBHV8560Z
NXP Semiconductors
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 400 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
VCB = 400 V; IE = 0 A; Tj = 150 °C
-
-
10
µA
ICES
collector-emitter cut-off VCE = 400 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 4 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
hFE
DC current gain
VCE = 10 V; IC = 50 mA; Tamb = 25 °C
70
135
-
VCE = 10 V; IC = 100 mA; tp ≤ 300 µs;
70
135
-
IC = 50 mA; IB = 5 mA; Tamb = 25 °C
-
50
100
mV
IC = 100 mA; IB = 20 mA; tp ≤ 300 µs;
-
50
100
mV
δ ≤ 0.02 ; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
δ ≤ 0.02 ; Tamb = 25 °C
VBEsat
base-emitter saturation IC = 50 mA; IB = 5 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
-
950
mV
Cc
collector capacitance
-
7.5
-
pF
-
710
-
pF
VCB = 20 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
Ce
emitter capacitance
VEB = 0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
PBHV8560Z
Product data sheet
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PBHV8560Z
NXP Semiconductors
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
aaa-013428
200
aaa-014049
200
hFE
hFE
150
150
(1)
(1)
(2)
100
(2)
100
(3)
(3)
50
50
0
10-1
Fig. 4.
1
102
10
IC (mA)
0
10-1
103
1
VCE = 10 V
Tamb = 25 °C
(1) Tamb = 100 °C
(1) VCE = 10 V
(2) Tamb = 25 °C
(2) VCE = 25 V
(3) Tamb = −55 °C
(3) VCE = 50 V
DC current gain as a function of collector
current; typical values
Fig. 5.
aaa-013429
0.5
IB = 30 mA
IC
(A)
27
21
0.4
24
IC (mA)
103
DC current gain as a function of collector
current; typical values
aaa-013430
VBE
(V)
18
0.8
12
(1)
9
(2)
6
0.2
102
1.2
15
0.3
10
0.4
3
(3)
0.1
0
Fig. 6.
0
1
2
3
4
VCE (V)
0
10-1
5
1
Tamb = 25 °C
VCE = 10 V
Collector current as a function of collectoremitter voltage; typical values
(1) Tamb = −55 °C
Product data sheet
102
IC (mA)
103
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 7.
PBHV8560Z
10
Base-emitter voltage as a function of collector
current; typical values
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PBHV8560Z
NXP Semiconductors
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
aaa-013431
1.2
aaa-013432
1
VBEsat
(V)
1.0
VCEsat
(V)
0.8
10-1
(3)
(2)
(3)
0.4
0.2
10-1
Fig. 8.
(2)
(1)
0.6
(1)
1
10
102
IC (mA)
10-2
10-1
103
1
10
102
IC (mA)
103
IC/IB = 5
IC/IB = 5
(1) Tamb = −55 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb= 100 °C
(3) Tamb = −55 °C
Base-emitter saturation voltage as a function of Fig. 9.
collector current; typical values
Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-013433
1
aaa-013434
103
RCEsat
(Ω)
VCEsat
(V)
102
10-1
10
(1)
(1)
(2)
(3)
(2)
1
(3)
10-2
10-1
1
10
102
IC (mA)
10-1
10-1
103
1
Tamb = 25 °C
IC/IB = 5
(1) IC/IB = 10
(1) Tamb = 100 °C
(2) IC/IB = 5
(2) Tamb = 25 °C
(3) IC/IB = 2.5
(3) Tamb = −55 °C
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
PBHV8560Z
Product data sheet
10
102
IC (mA)
103
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
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PBHV8560Z
NXP Semiconductors
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
aaa-013435
103
RCEsat
(Ω)
(1)
(2)
102
(3)
10
1
10-1
10-1
1
102
10
IC (mA)
103
Tamb = 25 °C
(1) IC/IB = 10
(2) IC/IB = 5
(3) IC/IB = 2.5
Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
6.7
3.7
3.3
1
2
2.3
3
4.6
0.8
0.6
0.32
0.22
Dimensions in mm
04-11-10
Fig. 13. Package outline SC-73 (SOT223)
PBHV8560Z
Product data sheet
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PBHV8560Z
NXP Semiconductors
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
4
solder resist
3.9
6.1 7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 14. Reflow soldering footprint for SC-73 (SOT223)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
1
2
8.7
Dimensions in mm
3
1.9
(3×)
2.7
occupied area
preferred transport
direction during soldering
2.7
1.1
1.9
(2×)
sot223_fw
Fig. 15. Wave soldering footprint for SC-73 (SOT223)
PBHV8560Z
Product data sheet
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PBHV8560Z
NXP Semiconductors
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBHV8560Z v.1
20150313
Product data sheet
-
-
PBHV8560Z
Product data sheet
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PBHV8560Z
NXP Semiconductors
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
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Please consult the most recently issued document before initiating or
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PBHV8560Z
Product data sheet
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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PBHV8560Z
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600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PBHV8560Z
Product data sheet
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600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
11.1
Test information ..................................................... 8
Quality information ............................................... 8
12
Package outline ..................................................... 8
13
Soldering ................................................................ 9
14
Revision history ................................................... 10
15
15.1
15.2
15.3
15.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 March 2015
PBHV8560Z
Product data sheet
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