SO T2 23 PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9560Z 2. Features and benefits • • • • Low collector-emitter saturation voltage VCEsat High collector current capability High collector current gain hFE at high IC AEC-Q101 qualified 3. Applications • • • • • • • Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 600 V IC collector current - - 0.5 A hFE DC current gain 70 135 - VCE = 10 V; IC = 50 mA; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PBHV8560Z NXP Semiconductors 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline Graphic symbol 2, 4 4 1 1 2 3 SC-73 (SOT223) 3 sym016 6. Ordering information Table 3. Ordering information Type number PBHV8560Z Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 7. Marking Table 4. Marking codes Type number Marking code PBHV8560Z HV856Z PBHV8560Z Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 13 PBHV8560Z NXP Semiconductors 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 600 V VCEO collector-emitter voltage open base - 600 V VCESM collector-emitter peak voltage VBE = 0 V - 600 V VEBO emitter-base voltage open collector - 6 V IC collector current - 0.5 A Ptot total power dissipation [1] - 0.65 W [2] - 1.4 W Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . aaa-013425 1.6 Ptot (W) (1) 1.2 0.8 (2) 0.4 0 -60 20 (1) FR4 PCB, mounting pad for collector 6 cm (2) FR4 PCB, standard footprint Fig. 1. 100 Tamb (°C) 180 2 Power derating curves PBHV8560Z Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 13 PBHV8560Z NXP Semiconductors 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - - 190 K/W [2] - - 89 K/W - - 20 K/W thermal resistance from junction to solder point [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. aaa-013426 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . duty cycle = 1 102 0.75 0.5 0.33 10 0.2 0.1 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, tin-plated and standard footprint. Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-013427 102 0.75 Zth(j-a) (K/W) duty cycle = 1 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV8560Z Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 13 PBHV8560Z NXP Semiconductors 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 400 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 400 V; IE = 0 A; Tj = 150 °C - - 10 µA ICES collector-emitter cut-off VCE = 400 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 4 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 10 V; IC = 50 mA; Tamb = 25 °C 70 135 - VCE = 10 V; IC = 100 mA; tp ≤ 300 µs; 70 135 - IC = 50 mA; IB = 5 mA; Tamb = 25 °C - 50 100 mV IC = 100 mA; IB = 20 mA; tp ≤ 300 µs; - 50 100 mV δ ≤ 0.02 ; Tamb = 25 °C VCEsat collector-emitter saturation voltage δ ≤ 0.02 ; Tamb = 25 °C VBEsat base-emitter saturation IC = 50 mA; IB = 5 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - - 950 mV Cc collector capacitance - 7.5 - pF - 710 - pF VCB = 20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C Ce emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C PBHV8560Z Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 13 PBHV8560Z NXP Semiconductors 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor aaa-013428 200 aaa-014049 200 hFE hFE 150 150 (1) (1) (2) 100 (2) 100 (3) (3) 50 50 0 10-1 Fig. 4. 1 102 10 IC (mA) 0 10-1 103 1 VCE = 10 V Tamb = 25 °C (1) Tamb = 100 °C (1) VCE = 10 V (2) Tamb = 25 °C (2) VCE = 25 V (3) Tamb = −55 °C (3) VCE = 50 V DC current gain as a function of collector current; typical values Fig. 5. aaa-013429 0.5 IB = 30 mA IC (A) 27 21 0.4 24 IC (mA) 103 DC current gain as a function of collector current; typical values aaa-013430 VBE (V) 18 0.8 12 (1) 9 (2) 6 0.2 102 1.2 15 0.3 10 0.4 3 (3) 0.1 0 Fig. 6. 0 1 2 3 4 VCE (V) 0 10-1 5 1 Tamb = 25 °C VCE = 10 V Collector current as a function of collectoremitter voltage; typical values (1) Tamb = −55 °C Product data sheet 102 IC (mA) 103 (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 7. PBHV8560Z 10 Base-emitter voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 13 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 13 PBHV8560Z NXP Semiconductors 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor aaa-013431 1.2 aaa-013432 1 VBEsat (V) 1.0 VCEsat (V) 0.8 10-1 (3) (2) (3) 0.4 0.2 10-1 Fig. 8. (2) (1) 0.6 (1) 1 10 102 IC (mA) 10-2 10-1 103 1 10 102 IC (mA) 103 IC/IB = 5 IC/IB = 5 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb= 100 °C (3) Tamb = −55 °C Base-emitter saturation voltage as a function of Fig. 9. collector current; typical values Collector-emitter saturation voltage as a function of collector current; typical values aaa-013433 1 aaa-013434 103 RCEsat (Ω) VCEsat (V) 102 10-1 10 (1) (1) (2) (3) (2) 1 (3) 10-2 10-1 1 10 102 IC (mA) 10-1 10-1 103 1 Tamb = 25 °C IC/IB = 5 (1) IC/IB = 10 (1) Tamb = 100 °C (2) IC/IB = 5 (2) Tamb = 25 °C (3) IC/IB = 2.5 (3) Tamb = −55 °C Fig. 10. Collector-emitter saturation voltage as a function of collector current; typical values PBHV8560Z Product data sheet 10 102 IC (mA) 103 Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 13 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 13 PBHV8560Z NXP Semiconductors 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor aaa-013435 103 RCEsat (Ω) (1) (2) 102 (3) 10 1 10-1 10-1 1 102 10 IC (mA) 103 Tamb = 25 °C (1) IC/IB = 10 (2) IC/IB = 5 (3) IC/IB = 2.5 Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values 11. Test information 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 2.3 3 4.6 0.8 0.6 0.32 0.22 Dimensions in mm 04-11-10 Fig. 13. Package outline SC-73 (SOT223) PBHV8560Z Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 13 PBHV8560Z NXP Semiconductors 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig. 14. Reflow soldering footprint for SC-73 (SOT223) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 1 2 8.7 Dimensions in mm 3 1.9 (3×) 2.7 occupied area preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig. 15. Wave soldering footprint for SC-73 (SOT223) PBHV8560Z Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 13 PBHV8560Z NXP Semiconductors 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBHV8560Z v.1 20150313 Product data sheet - - PBHV8560Z Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 13 PBHV8560Z NXP Semiconductors 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 11.1 Test information ..................................................... 8 Quality information ............................................... 8 12 Package outline ..................................................... 8 13 Soldering ................................................................ 9 14 Revision history ................................................... 10 15 15.1 15.2 15.3 15.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 13 March 2015 PBHV8560Z Product data sheet All information provided in this document is subject to legal disclaimers. 13 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 13