Si photodiode S10917-35GT RGB color sensor integrated in small and thin package The S10917-35GT is a compact color sensor with a 3-channel photodiode mounted in one package, and sensitive to red (λ=590 to 680 nm), green (λ=470 to 600 nm) and blue (λ=390 to 530 nm) light. An infrared-cut filter is formed on the photosensitive area. This color sensor achieves superior cost performance and is suitable for monitoring brightness of RGB-LED backlight LCD in hand-held devices such as cell phones. Features Applications Infrared-cut filter formed on photosensitive area Portable or mobile equipment Superior cost performance RGB-LED type LCD backlight monitors Small, thin package: 3.0 × 1.6 × 1.0 tmm Detectors for various light sources 3-channel (RGB) Si photodiode Color detection Photosensitive area: 1 × 1 mm/3-segment (RGB) RoHS-compatible Surface mount type Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage 10 V VR max Operating temperature Topr -25 to +85 °C Storage temperature Tstg -40 to +85 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, per element) Parameter Symbol Spectral response range λ Peak sensitivity wavelength λp Photosensitivity S Dark current Temperature coefficient of ID Rise time Terminal capacitance ID TCID tr Ct Condition Blue Green Red Blue Green Red Blue (λ=λp) Green (λ=λp) Red (λ=λp) VR=1 V, all elements VR=0 V, RL=1 kΩ, 10 to 90% VR=0 V, f=10 kHz Min. 0.15 0.18 0.12 5 www.hamamatsu.com Typ. 390 to 530 470 to 600 590 to 680 460 540 620 0.2 0.23 0.17 1 1.12 0.1 12 Max. 0.25 0.28 0.22 50 0.5 25 Unit nm nm A/W pA times/°C μs pF 1 Si photodiode S10917-35GT Spectral response (typical example) Linearity (Ta=25 °C) Short circuit current Photosensitivity (A/W) Green 0.2 (Typ. Ta=25 °C, VR=0 V, 2856 K) 10 μA 0.3 Blue Red 0.1 1 μA Red Green 100 nA Blue 0 200 300 400 500 600 700 800 900 1000 1100 10 nA 100 Wavelength (nm) 1000 10000 Illuminance (lx) KSPDB0295EA KSPDB0328EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 100 pA (Typ. Ta=25 °C) 100 pF Terminal capacitance Dark current 10 pA 1 pA 100 fA 10 fA 0.01 0.1 1 10 100 Reverse voltage (V) 10 pF 1 pF 100 fF 0.1 1 10 100 Reverse voltage (V) KSPDB0252EA KSPDB0253EA 2 Si photodiode S10917-35GT Dimensional outline (uint: mm) (3 ×) index mark 0.03 1.0 Photosensitive area Anode (green) Anode (blue) Cathode common Anode (red) 0.65 1.5 0.65 0.4 Tolerance unless otherwise noted: ±0.2 Chip position accuracy with respect to the package dimensions marked *1 X, Y≤±0.3 Values in parentheses indicate reference value. *2: Do not allow metal/conductive objects to contact the part where the wiring is exposed. Doing so may cause short circuits. Electrode Standard packing: reel (3000 pcs/reel) 0.9 0.9 B 1.0 (0.29) * 2 1.0 0.4 0.3 Photosensitive surface G R 0.6 1.6*1 G R B 0.03 0.62 1.5 0.62 0.6 3.0*1 Recommended land pattern KSPDA0174ED Measured example of temperature profile with our hot-air reflow oven for product testing This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours. 300 °C 245 °C max. Temperature 230 °C 190 °C 170 °C Preheat 60 ŵŰġ120 s Soldering 40 s max. Time KSPDB0139EA 3 Si photodiode S10917-35GT Lineup of RGB color sensors S10942-01CT Photodiode 1.0 × 1.0 3 × 1.6 × 1.0t COB (on-chip filter) * S9706 Digital photo IC 1.2 × 1.2 4 × 4.8 × 1.8t 6 pin (filter 0.75t) S11012-01CR Digital photo IC 1.2 × 1.2 3.43 × 3.8 × 1.6t COB (on-chip filter) S11059-02DT /-03DS I2C compatible color sensor 0.56 × 1.22 3 × 4.2 ×1.3t 10 pin (on-chip filter) Photodiode ϕ2.0 4 × 4.8 × 1.8t 6 pin (filter 0.75t) B G R B G R IR 465 540 615 Photosensitivity B G R B G R B G R B G R * Low (mm) 460 530 615 855 Low (mm) B G R B G R B G R IR Photo 0.18 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.16 (A/W) [λ=620 nm] 0.18 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.16 (A/W) [λ=620 nm] 0.2 (A/W) [λ=460 nm] 0.23 (A/W) [λ=540 nm] 0.17 (A/W) [λ=620 nm] 0.21 (A/W) [λ=460 nm] 0.25 (A/W) [λ=540 nm] 0.45 (A/W) [λ=640 nm] B 0.21 (LSB/lx) 1.9 (LSB/lx) G 0.45 (LSB/lx) 4.1 (LSB/lx) R 0.64 (LSB/lx) 5.8 (LSB/lx) B 0.3 (LSB/lx) 2.6 (LSB/lx) G 0.6 (LSB/lx) 5.3 (LSB/lx) R 12.9 (LSB/lx) 1.4 (LSB/lx) B 44.8 (count/lx) 4.4 (count/lx) G 85.0 (count/lx) 8.3 (count/lx) R 117.0 (count/lx) 11.2 (count/lx) IR 30.0 (count/lx) 3.0 (count/lx) High Photodiode 3 × 1.6 × 1.0t COB (on-chip filter) Package High S10917-35GT 1.0 × 1.0 S9702 Photosensitive area High 1.0 × 1.0 S9032-02 Type Low Photodiode 3 × 4 × 1.3t 4 pin (filter 0.75t) Peak sensitivity wavelength (nm) B 460 G 540 R 620 B 460 G 540 R 620 B 460 G 540 R 620 Type no. * Refer to the spectral response of each product’s datasheet. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, Plastic Package products ∙ Surface mount type products Information described in this material is current as of February, 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1078E08 Feb. 2016 DN 4