Si PIN photodiodes S1223 series For visible to near IR, precision photometry Features Applications High sensitivity in visible to near infrared range Optical measurement equipment High reliability Analytical equipment, etc. High-speed response S1223: fc=30 MHz S1223-01: fc=20 MHz Low capacitance Structure Parameter Dimensional outline Window material Package Photosensitive area size Effective photosensitive area S1223 (1) S1223-01 (2) Unit mm mm2 Borosilicate glass TO-5 2.4 × 2.8 6.6 3.6 × 3.6 13 Absolute maximum ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature Symbol VR max P Topr Tstg S1223 S1223-01 Unit V mW °C °C 30 100 -40 to +100 -55 to +125 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Spectral response range Peak sensitivity wavelength λ λp Photosensitivity Short circuit current Dark current Temp. coefficient of ID Cutoff frequency Terminal capacitance Noise equivalent power S Isc ID TCID fc Ct NEP Condition λ=λp λ=660 nm λ=780 nm λ=830 nm 100 lx VR=20 V VR=20 V, -3 dB VR=20 V, f=1 MHz VR=20 V, λ=λp Min. 5 - S1223 Typ. 320 to 1100 960 0.6 0.45 0.52 0.54 6.3 0.1 1.15 30 10 9.4 × 10-15 Max. 10 - www.hamamatsu.com Min. 10 - S1223-01 Typ. 320 to 1100 960 0.6 0.45 0.52 0.54 13 0.2 1.15 20 20 1.3 × 10-14 Max. 10 - Unit nm nm A/W μA nA times/°C MHz pF W/Hz1/2 1 Si PIN photodiodes S1223 series Photosensitivity temperature characteristic Spectral response (Typ. Ta=25 °C) 0.7 (Typ.) +1.5 Temperature coefficient (%/°C) Photosensitivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 300 400 500 600 700 800 900 +1.0 +0.5 0 -0.5 300 1000 1100 400 500 600 700 800 1000 1100 Wavelength (nm) Wavelength (nm) KPINB0143EB KPINB0144EB Terminal capacitance vs. reverse voltage Dark current vs. reverse voltage (Typ. Ta=25 °C) 10 nA 900 (Typ. Ta=25 °C, f=1 MHz) 1 nF Terminal capacitance Dark current 1 nA 100 pA S1223-01 10 pA S1223 100 pF S1223-01 10 pF S1223 1 pA 0.1 1 10 100 1 pF 0.1 1 10 Reverse voltage (V) Reverse voltage (V) 100 KPINB0146EA KPINB0145EA 2 Si PIN photodiodes S1223 series Dimensional outlines (unit: mm) X Photosensitive area 3.6 × 3.6 Photosensitive area 2.4 × 2.8 0.3 Glass 4.1 ± 0.2 Glass Photosensitive surface 0.45 Lead 20 20 2.8 2.8 Photosensitive surface 9.1 ± 0.2 8.1 ± 0.1 X 4.1 ± 0.2 8.1 ± 0.1 Y 9.1 ± 0.2 Y Window 5.9 ± 0.1 (2) S1223-01 Window 5.9 ± 0.1 (1) S1223 0.45 Lead 5.08 ± 0.2 5.08 ± 0.2 Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Distance from photosensitive area center to cap center -0.6≤X≤0 -0.3≤Y≤+0.3 Connected to case Connected to case The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0196EB The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0193EC Information described in this material is current as of February, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1050E02 Feb. 2013 DN 3