Si photodiodes S2592/S3477 series Thermoelectrically cooled photodiodes for low-light-level detection in UV to near IR The S2592/S3477 series sensors combine a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same package to sense the Si photodiode chip temperature. This allows stable operation over long periods of time, making these sensors suitable for low-light-level detection where a high S/N is required. The S2592 series is hermetically sealed in a TO-8 package, and the S3477 series in a TO-66 package. A dedicated temperature controller (C1103-04) and heatsink (A3179 series) are also available as options (sold separately). Features Applications High S/N Low-light-level detection High UV sensitivity Built-in thermistor allows stable operation. Structure Parameter Built-in photodiode Window material Photosensitive area Package S2592-03 S3477-03 S2592-04 S1336 series Sapphire glass 2.4 × 2.4 TO-8 S3477-04 5.8 × 5.8 TO-66 TO-8 Unit mm TO-66 Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Allowable current for thermoelectric cooler Thermistor power dissipation Symbol VR Topr Tstg Value 5 -40 to +70 -55 to +85 Unit V °C °C Ite 1.5 A Pth 0.2 mW Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photosensitivity Short circuit current Dark current Temperature coefficient of dark current Rise time Terminal capacitance Shunt resistance Noise equivalent power Cooling temperature Symbol λ λp S Isc ID Condition λ=λp 100 lx, 2856 K VR=10 mV S2592-03 S3477-03 S2592-04 190 to 1100 960 0.5 5 10 28 25 1.15 TCID tr Ct Rsh NEP ∆T S3477-04 VR=0 V, RL=1 kΩ VR=0 V VR=10 mV VR=0 V, λ=λp 0.2 65 1 8.1 × 10-15 www.hamamatsu.com times/°C 1 380 0.4 1.3 × 10-14 35 Unit nm nm A/W μA pA μs pF GΩ W/Hz1/2 °C 1 S2592/S3477 series Si photodiodes Spectral response Photosensitivity temperature characteristics (Typ. Ta=25 °C) 0.7 Temperature coefficient (%/°C) Photosensitivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 190 300 400 500 (Typ. ) +1.5 +1.0 +0.5 0 -0.5 190 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) 600 700 800 900 1000 1100 Wavelength (nm) KSPDB0182EB KSPDB0053EC Shunt resistance vs. element temperature Cooling characteristics of TE-cooler (Typ. VR=10 mV) 40 1 TΩ (Typ. Ta=25 °C, thermal resistance of heatsink=3 °C/W) Element temperature (°C) 100 GΩ 10 GΩ Shunt resistance S2592-03, S3477-03 1 GΩ 100 MΩ S2592-04, S3477-04 10 MΩ 1 MΩ 20 0 S2592 series -20 S3477 series -40 100 kΩ 10 kΩ -20 0 20 40 60 80 -60 0 0.4 0.8 1.2 1.6 Current (A) Element temperature (°C) KSPDB0183EA KSPDB0184EA 2 S2592/S3477 series Si photodiodes Current vs. voltage characteristics of TE-cooler 1.6 Thermistor temperature characteristics (Typ. Ta=25 °C, thermal resistance of heatsink=3 °C/W) (Typ.) 106 1.4 105 Resistance (Ω) 1.0 0.8 0.6 4 10 0.4 0.2 0 3 0 0.2 0.4 0.6 0.8 1.0 10 1.2 -40 -30 -20 -10 0 10 20 30 Element temperature (°C) Voltage (V) KSPDB0185EC KIRDB0116EB Dimensional outlines (unit: mm) S2592 series ɸ15.3 ± 0.2 12 Min. Photosensitive surface 6.4 ± 0.2 Window ɸ10 ± 0.2 2.0 ± 0.2 ɸ14 ± 0.2 ɸ0.45 lead 5.1 ± 0.2 Current (A) 1.2 10.2 ± 0.2 Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor 5.1 ± 0.2 KSPDA0133EB 3 S2592/S3477 series Si photodiodes S3477 series 32 Max. ϕ14 ± 0.1 Window ϕ10 ± 0.1 20 ± 1 Photosensitive surface 8.6 ± 0.2 ϕ3.7 4.1 ± 0.2 17 ± 0.4 24.4 ± 0.1 ϕ9.3 Thermistor Thermistor Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) KSPDA0134EC 4 Si photodiodes S2592/S3477 series Temperature controller for TE-cooled detector C1103-04 By adjusting the current flowing through the thermoelectric cooler in a one-stage or twostage thermoelectrically cooled detector, the C1103-04 maintains the detector element at a constant temperature. The cooling temperature can be easily set by using the control knob on the front panel. Accessories Instruction manual 4-conductor cable (with a connector, 3 m) A4372-05*1 Power supply cable Specifications Setting element temperature Applicable detectors*2 Temperature stability Temperature control output current Power supply Power consumption Dimensions and weight Operating temperature Operating humidity Storage temperature -30 to +20 °C One-stage or two-stage thermoelectrically cooled detectors Within ±0.1 °C 1.1 A min., 1.2 A typ., 1.3 A max. 100 V ± 10% ∙ 50/60 Hz*3 30 W 107 (W) × 84 (H) × 190 (D) mm/approx. 1.9 kg +10 to +40 °C Equal to or less than 90%*4 +20 to +40 °C *1: When used in combination with the A3179 series heatsink, do not use the 4-conductor cable supplied with the A3179 series, but use the A4372-05 instead. *2: It doesn't correspond to TE-cooled type infrared detector module with preamp. *3: Power requirement (AC line voltage) can be selected from among 100 V, 115 V and 230 V at the factory prior to shipping. *4: No condensation Block diagram C1103-04 TE-cooled detector Thermistor Comparator Amp circuit Current circuit TE-cooled detector Power supply AC input KACCC0143EB 5 Si photodiodes S2592/S3477 series Heatsink for TE-cooled detector (TO-8 package) A3179 The A3179 heatsink is designed for thermoelectrically cooled detectors having a 6-pin TO-8 package. Heat dissipation capacity for the A3179 is about 35 °C versus the ambient temperature 25 °C. Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.3) ϕ32 3 3 ϕ46 0.4 ± 0.3*2 ϕ26 ± 0.2 *1 Photosensitive surface*3 Detector metal package 32 (4 ×) ϕ3.5 ϕ40 60° 32.6 Weight: 50 g approx. *1: Bottom surface (reference surface) of detector metal package *2: When the detector is installed *3: The position of the photosensitive surface differs according to the detector used. Refer to the dimensional outline for the detector. KIRDA0018ED 6 Si photodiodes S2592/S3477 series Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like. Related information http://www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode / Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1003E09 Oct. 2015 DN 7