Si PIN photodiode S3204/S3584 series Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI (TI) scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance TOF counters High-speed response High stability Good energy resolution Structure / Absolute maximum ratings Type No. S3204-08 S3204-09 S3584-08 S3584-09 Window material Active area Depletion layer thickness (mm) (mm) Epoxy resin Unsealed Epoxy resin Unsealed Reverse voltage VR max Absolute maximum ratings Power Operating dissipation temperature P Topr (mW) (°C) Storage temperature Tstg (°C) 18 × 18 0.3 100 100 -20 to +60 -20 to +80 28 × 28 Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. S3204-08 S3204-09 S3584-08 S3584-09 Spectral response range λ Peak sensitivity wavelength λp (nm) (nm) 340 to 1100 960 Dark Cut-off Short Terminal current Temp. Frequency circuit capacitance ID NEP fc current VR=70 V coefficient Ct VR=70 V D of I Isc VR=70 V f=1MHz TCID LSO BGO CsI(TI) -3 dB VR=70 V 100 lx Typ. Max. λ=λp 420 nm 480 nm 540 nm (nA) (nA) (times/°C) (MHz) (A/W) (A/W) (A/W) (A/W) (μA) (pF) (W/Hz1/2) 0.20 0.30 0.36 340 6 20 20 130 6.6 × 10 -14 0.22 0.33 0.41 300 0.66 1.12 0.20 0.30 0.36 780 10 30 10 300 8.6 × 10 -14 0.22 0.33 0.41 730 Photo sensitivity S www.hamamatsu.com 1 Si PIN photodiode S3204/S3584 series Spectral response (without window) Spectral response (Typ. Ta=25 °C) 0.7 0.6 0.6 S3204/S3584-09 0.5 Photo sensitivity (A/W) Photo sensitivity (A/W) S3204/S3584-08 0.4 0.3 0.2 0.1 0 300 (Typ. Ta=25 °C) 0.7 0.5 0.4 0.3 0.2 0.1 400 500 600 700 800 900 0 300 1000 1100 Wavelength (nm) 400 500 600 700 800 900 Wavelength (nm) KPINB0227ED KPINB0264ED Photo sensitivity temperature characteristic Dark current vs. reverse voltage (Typ.) +1.5 (Typ. Ta=25 °C) 100 nA +1.0 10 nA Dark current Temperature coefficient (%/°C) 1000 1100 +0.5 S3204-08/-09 1 nA S3584-08/-09 0 -0.5 300 400 500 600 700 800 900 1000 1100 100 pA 0.1 1 10 100 Reverse voltage (V) Wavelength (nm) KPINB0093ED KPINB0228EE 2 Si PIN photodiode S3204/S3584 series Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C, f=1 MHz) 10 nF S3584-08/-09 Terminal capacitance S3204-08/-09 1 nF 100 pF 10 pF 0.1 1 10 100 Reverse voltage (V) KPINB0230EE Dimensional outline (unit: mm) S3204-08 S3204-09 25.5 +0 - 0.6 25.5 +0 - 0.6 3.4 25.5 +0 - 0.6 25.5 +0 - 0.6 3.4 2.54 ± 0.2 1.2 White ceramic 0.45 Lead 10 Photosensitive surface 0.45 Lead 1.75 5.0 ± 0.2 1.75 5.0 ± 0.2 White ceramic 10 Photosensitive surface 1.2 Resin 2.54 ± 0.2 Active area 18 × 18 Active area 18 × 18 KPINA0040EC KPINA0110EA 3 Si PIN photodiode S3204/S3584 series S3584-08 S3584-09 35.6 +0 - 0.8 35.6 +0 - 0.8 3.4 35.6 +0 - 0.8 35.6 +0 - 0.8 3.4 Active area 28 × 28 White ceramic 0.45 Lead 2.54 ± 0.2 10 1.2 Photosensitive surface 10 White ceramic 2.54 ± 0.2 Photosensitive surface 1.2 Resin Active area 28 × 28 0.45 Lead 1.75 5.0 ± 0.2 5.0 ± 0.2 1.75 KPINA0041ED KPINA0111EA Information described in this material is current as of January, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1051E10 Jan. 2012 DN 4