Si PIN photodiode S3590-08/-09/-18/-19 Large active area Si PIN photodiode Features Applications Sensitivity matching with BGO and CsI (TI) scintillators: S3590-08/-09 Scintillation detectors Sensitivity matching with blue scintillator (LSO, GSO, etc.): S3590-18/-19 Bare chip type (unsealed): S3590-09/-19 High quantum efficiency: S3590-09 (λ=540 nm) S3590-19 (λ=400 nm) Hodoscopes TOF counters Radiation detection X-ray detection Low capacitance High-speed response High stability Good energy resolution Structure / Absolute maximum ratings Type No. S3590-08 S3590-09 S3590-18 S3590-19 Window material Epoxy resin Unsealed Epoxy resin Unsealed Active area Depletion layer thickness (mm) (mm) 10 × 10 0.3 Reverse voltage VR max 100 Absolute maximum ratings Power Operating dissipation temperature P Topr (mW) (°C) 100 -20 to +60 Storage temperature Tstg (°C) -20 to +80 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. S3590-08 S3590-09 S3590-18 S3590-19 Spectral response range λ Peak sensitivity wavelength λp (nm) (nm) 340 to 1100 960 Dark Short Terminal Temp. Cut-off current circuit coefficient Frequency capacitance ID NEP current VR=70 V of ID Ct VR=70 V fc f=1MHz TCID Isc LSO BGO CsI(TI) VR=70 V VR=70 V 100 lx Typ. Max. VR=70 V λ=λp 420 nm 480 nm 540 nm (nA) (nA) (times/°C) (MHz) (A/W) (A/W) (A/W) (A/W) (μA) (pF) (W/Hz1/2) 0.20 0.30 0.36 100 3.8 × 10 -14 0.66 2 6 0.22 0.33 0.41 90 1.12 40 40 0.65 0.28 0.34 0.38 100 4 10 7.6 × 10 -14 0.58 0.33 0.37 0.4 86 Photo sensitivity S www.hamamatsu.com 1 Si PIN photodiode S3590-08/-09/-18/-19 Spectral response S3590-08 S3590-09 (Typ. Ta=25 °C) 0.7 QE=100% 0.5 0.4 0.3 0.2 0.1 0 300 QE=100 % 0.6 Photosensitivity (A/W) Photosensitivity (A/W) 0.6 (Typ. Ta=25 °C) 0.7 0.5 0.4 0.3 0.2 0.1 400 500 600 700 800 900 0 300 1000 1100 400 500 Wavelength (nm) 600 700 800 900 Wavelength (nm) KPINB0231EC KPINB0263EC S3590-18 S3590-19 (Bare chip type) (Typ. Ta=25 °C) 0.7 (Typ. Ta=25 °C) 0.7 QE=100 % QE=100 % 0.6 Photosensitivity (A/W) Photosensitivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 300 1000 1100 0.5 0.4 0.3 0.2 0.1 400 500 600 700 800 900 1000 1100 Wavelength (nm) 0 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) KPINB0223EC KPINB0224EC 2 Si PIN photodiode S3590-08/-09/-18/-19 Dark current vs. reverse voltage Photosensitivity temperature characteristic (Typ.) (Typ. Ta=25 °C) 100 nA +1.0 10 nA Dark current Temperature coefficient (%/°C) +1.5 +0.5 S3590-18/-19 1 nA 0 -0.5 300 S3590-08/-09 400 500 600 700 800 900 1000 1100 Wavelength (nm) 100 pA 0.1 1 10 100 Reverse voltage (V) KPINB0093EE KPINB0232ED Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C, f=1 MHz) Terminal capacitance 10 nF 1 nF S3590-18/-19 S3590-08/-09 100 pF 10 pF 0.1 1 10 100 Reverse voltage (V) KPINB0234ED 3 Si PIN photodiode S3590-08/-09/-18/-19 Dimensional outline (unit: mm) S3590-08/-18 S3590-09/-19 +0 +0 14.5 - 0.5 14.5 - 0.5 1.4 Active area 10 × 10 White ceramic White ceramic Photosensitive surface 0.45 Lead 10 0.45 Lead 0.7 Photosensitive surface 10 0.7 Resin 1.78 ± 0.2 Active area 10 × 10 1.78 ± 0.2 +0 +0 12.7 - 0.5 12.7 - 0.5 1.4 1.25 KPINA0014EG 5.0 ± 0.2 1.25 5.0 ± 0.2 The coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. KPINA0098EE Information described in this material is current as of July, 2012. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIN1052E09 Jul. 2012 DN 4