s5971 etc kpin1025e

Si PIN photodiodes
S5971
S5972
S5973 series
High-speed photodiodes
(S5973 series: 1 GHz)
The S5971, S5972 and S5973 series are high-speed Si PIN photodiodes designed for visible to near infrared light detection. These photodiodes provide wideband characteristics at a low bias, making them suitable for optical communications
and other high-speed photometry. The S5973 series includes a mini-lens type (S5973-01) that can be efficiently coupled
to an optical fiber and a violet sensitivity enhanced type (S5973-02) ideal for violet laser detection.
Features
Applications
High-speed response
S5971
: 100 MHz (VR=10 V)
S5972
: 500 MHz (VR=10 V)
S5973 series: 1 GHz (VR=3.3 V)
Optical fiber communications
High-speed photometry
Violet laser detection (S5973-02)
Low price
High sensitivity
S5973-02: 0.3 A/W, QE=91 % (λ=410 nm)
High reliability
Structure / Absolute maximum ratings
Type no.
S5971
S5972
S5973
S5973-01
S5973-02
Dimensional
outline/
Window
material*1
Package
Photosensitive
area size
Effective
photosensitive
area
(mm)
φ1.2
φ0.8
(mm2)
1.1
0.5
φ0.4
0.12
(mm)
(1)/K
Reverse
voltage
VR Max.
(V)
TO-18
Absolute maximum ratings
Power
Operating
Storage
dissipation temperature temperature
P
Topr
Tstg
(mW)
(°C)
(°C)
20
(2)/L
(3)/K
50
-40 to +100 -55 to +125
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics
Type no.
Photosensitivity
S
(A/W)
Spectral Peak
response sensitivity
range wavelength
λ
λp
λp
S5971
S5972
S5973
S5973-01
S5973-02
*1:
*2:
*3:
*4:
(nm) (nm)
320 to 1060 900
800
0.64
0.57
320 to 1000
0.52
760
0.4
660
nm
780
nm
0.55
0.6
0.55
0.51
0.47
0.42
0.37
0.44
0.3*2
830
nm
Short
circuit
current
Isc
100 lx
(μA)
1.0
0.42
0.09
0.42
0.07
Dark
current
ID
Typ.
(nA)
0.07*3
0.01*3
Max.
(nA)
1*3
0.5*3
0.001*4
0.1*4
Noise
Temp.
Terminal
equivalent power
coefficient Cutoff
capacitance
frequency
NEP
of
Ct
fc
VR=10 V
ID
f=1 MHz
λ=λp
TCID
(times/°C)
(GHz)
0.1*3
0.5*3
(pF)
1*4
1.6*4
3*3
1.15
(W/Hz1/2)
7.4 × 10-15
3.1 × 10-15
1.1 × 10-15 *4
1.9 × 10-15 *2 *4
Window material K: borosilicate glass, L: lens type borosilicate glass
λ=410 nm
VR=10 V
VR=3.3 V
www.hamamatsu.com
1
Si PIN photodiodes
S5971, S5972, S5973 series
Spectral response
Photosensitivity temperature characteristics
(Typ. Ta=25 °C)
0.7
(Typ.)
+1.5
S5971
S5971
Temperature coefficient (%/°C)
Photosensitivity (A/W)
0.6
0.5
0.4
S5973-02
S5972
0.3
S5973/-01
0.2
0.1
0
300
400
500
600
700
800
+1.0
S5972
S5973 series
+0.5
0
-0.5
200
900 1000 1100
Wavelength (nm)
400
600
800
Wavelength (nm)
KPINB0157EB
KPINB0158EA
Frequency response
+10
1000
Cutoff frequency vs. reverse voltage
(Typ. Ta=25 °C, λ=830 nm, RL=50 Ω)
(Typ. Ta=25 °C, λ=830 nm, RL=50 Ω)
10 GHz
S5973 series
0
Cutoff frequency
Relative output (dB)
S5973 series
(VR=3.3 V)
-3
S5971
(VR=10 V)
-10
1 GHz
S5972
100 MHz
S5971
S5972
(VR=10 V)
-20
1 MHz
10 MHz
100 MHz
1 GHz
10 GHz
10 MHz
1
10
100
Reverse voltage (V)
Frequency
KPINB0159EB
KPINB0160EB
2
Si PIN photodiodes
S5971, S5972, S5973 series
Dark current vs. reverse voltage
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C, f=1 MHz)
(Typ. Ta=25 °C)
100 pA
100 pF
Terminal capacitance
S5971
Dark current
10 pA
S5972
1 pA
S5971
10 pF
S5972
S5973 series
S5973 series
100 fA
0.1
10
1
1 pF
0.1
100
1
Reverse voltage (V)
10
100
Reverse voltage (V)
KPINB0161EA
KPINB0162EA
Fiber coupling characteristics (S5973-01)
X, Y direction
(Typ. Ta=25 °C, λ=780 nm, NA=0.2)
0.6
0.5
0.4
0.3
0.2
Optical fiber
(core diameter: 50 µm)
Y
X
0.1
0
-0.8
Z
Light source=780 nm LD
Z=0.5 mm
-0.4
0
+0.4
+0.8
Shift from lens center X, Y (mm)
(Typ. Ta=25 °C, λ=780 nm, NA=0.2)
0.6
Fiber-coupled sensitivity (A/W)
Fiber-coupled sensitivity (A/W)
Z direction
0.5
0.4
0.3
Optical fiber
(core diameter: 50 µm)
Y
0.2
X
Z
Light source =780 nm LD
X, Y= 0 mm
0.1
0
0.2
0.5
1
2
5
10
20
Distance between lens and fiber end Z (mm)
KPINB0088EA
KPINB0089EA
3
Si PIN photodiodes
S5971, S5972, S5973 series
Dimensional outlines (unit: mm)
3.6 ± 0.2
Photosensitive
surface
Photosensitive
surface
0.45
Lead
13
0.45
Lead
4.6 ± 0.1
13.5
4.7 ± 0.1
2.8
Window
3.0 ± 0.2
5.4 ± 0.2
0.65 ± 0.15
Window
1.5 lens
5.4 ± 0.2
3.75 ± 0.2
(2) S5973-01
2.8
(1) S5971, S5972, S5973
2.54 ± 0.2
2.54 ± 0.2
Case
KPINA0022EB
Case
KPINA0023EA
(3) S5973-02
0.45
Lead
3.75 ± 0.2
4.7 ± 0.1
2.8
Photosensitive
surface
5.4 ± 0.2
13
Window
2.0 min.
2.54 ± 0.2
Case
KPINA0061EB
4
Si PIN photodiodes
S5971, S5972, S5973 series
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic package products
Technical information
∙ Si photodiode / Application circuit example
Information described in this material is current as of November, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KPIN1025E08 Nov. 2015 DN
5