Two-color detectors K3413-05/-08/-09 Sensors with a wide spectral response range from UV to IR The K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.32 μm to nearly 2.6 μm. The built-in thermoelectric cooler maintains a constant temperature during operation, allowing precision measurement with an improved S/N. Features Applications Wide spectral response range Spectrophotometers Si photodiode and InGaAs PIN photodiode are arranged along the same optical axis. Laser monitors One-stage thermoelectrically cooled type Flame monitors Radiation thermometers Structure/Absolute maximum ratings Absolute maximum ratings TE-cooler Reverse Operating Storage Type No. Package Cooling allowable voltage temperature temperature current VR Topr Tstg (mm) (A) (V) (°C) (°C) Si 2.4 × 2.4 5 K3413-05 InGaAs 20 φ0.5 Si 2.4 × 2.4 5 One-stage TO-8 K3413-08 0.2 1.5 -40 to +70 -55 to +85 TE-cooled InGaAs 2 φ1 Si 2.4 × 2.4 5 K3413-09 InGaAs 10 φ1 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Photosensitive Detector area element Thermistor allowable dissipation (mW) Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Measurement condition Type No. K3413-05 K3413-08 K3413-09 *1: *2: *3: *4: *5: Peak PhotoSpectral sensitivity sensitivity Element response S wavelength Detector temperature range λ=λp λp element T Si InGaAs Si InGaAs Si InGaAs (°C) 25 -10 25 -10 25 -10 (μm) 0.32 to 1.67 0.32 to 2.57 0.32 to 1.67 (μm) 0.94 1.55 0.94 2.30 0.94 1.55 Dark current ID VR=10 mV Shunt Resistance Rsh D* λ=λp (MΩ) 200 3000 200 0.03 200 1500 (cm · Hz1/2/W) 1.4 × 1013 1.2 × 1013 1.4 × 1013 7.4 × 1010 1.4 × 1013 1.2 × 1013 Typ. Max. (A/W) (pA) (pA) 0.45 50 100 0.55 50 *1 250 *1 0.45 50 100 0.60 1.5 (μA) *2 7.5 (μA) *2 0.45 50 100 0.55 70 *2 350 *2 Terminal Rise time capacitance tr Ct VR=0 V VR=5 V RL=1 kΩ 10 to 90 % f=1 MHz (ns) 200 *3 1.5 *4 200 *3 23 *4 200 *3 7 *4 (pF) 60 *5 12 60 *5 200 *2 60 *5 90 VR=5 V VR=1 V λ=655 nm VR=5 V, RL=50 Ω VR=0 V, f=10 kHz www.hamamatsu.com 1 Two-color detectors K3413-05/-08/-09 Spectral response Si photodiode InGaAs PIN photodiode (Typ. Ta=25 °C) 0.7 0.6 Photosensitivity (A/W) Photosensitivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0.2 (Typ. T=-10 °C) 0.7 0.5 0.4 K3413-08 0.3 K3413-05/-09 0.2 0.1 0.4 0.6 0.8 1.0 0 0.8 1.0 1.2 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Wavelength (µm) Wavelength (µm) KIRDB0199EA KIRDB0212EA Dark current vs. reverse voltage Si photodiode InGaAs PIN photodiode (Typ. Ta=25 °C) 1 nA (Typ. Ta=25 °C) 100 µA 10 µA K3413-08 Dark current Dark current 1 µA 100 pA 100 nA 10 nA K3413-09 1 nA K3413-05 10 pA 0.01 0.1 1 10 100 pA 0.01 0.1 1 10 100 Reverse voltage (V) Reverse voltage (V) KIRDB0200EA KIRDB0213EA 2 Two-color detectors K3413-05/-08/-09 Terminal capacitance vs. reverse voltage Si photodiode InGaAs PIN photodiode (Typ. Ta=25 °C, f=10 kHz) 100 pF (Typ. Ta=25 °C, f=1 MHz) 10 nF K3413-08 Terminal capacitance Terminal capacitance 1 nF 10 pF 100 pF 10 pF K3413-09 K3413-05 1 pF 1 pF 0.01 0.1 1 100 fF 0.01 10 0.1 Reverse voltage (V) 1 10 100 Reverse voltage (V) KIRDB0202EA KIRDB0214EA Shunt resistance vs. element temperature Si photodiode InGaAs PIN photodiode (Typ. VR=10 mV) 10 TΩ 10 GΩ 1 TΩ 100 MΩ Shunt resistance Shunt resistance K3413-05 1 GΩ 100 GΩ 10 GΩ 1 GΩ 100 MΩ 10 MΩ K3413-09 10 MΩ 1 MΩ K3413-08 100 kΩ 10 kΩ 1 MΩ 100 kΩ -40 (Typ. VR=10 mV) 100 GΩ 1 kΩ -20 0 20 40 60 80 100 Element temperature (°C) 100 Ω -40 -20 0 20 40 60 80 100 Element temperature (°C) KIRDB0204EA KIRDB0215EA 3 Two-color detectors K3413-05/-08/-09 Dimensional outline (unit: mm) 15.3 ± 0.2 14 ± 0.2 10.0 ± 0.2 0.45 Lead 6.0 ± 0.2 4.4 ± 0.2 InGaAs 12 Min. Si Window 10 ± 0.2 10.2 ± 0.2 5.1 ± 0.2 10.2 ± 0.2 InGaAs (Anode) InGaAs (Cathode) TE-Cooler (-) TE-Cooler (+) Thermistor Si (Cathode) Si (Anode) 5.1 ± 0.2 KIRDA0156EE Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic products Technical information ∙ Infrared detectors Information described in this material is current as of November, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1041E05 Nov. 2015 DN 4