SKiiP 28ANB18V3 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC MiniSKiiP® 2 3-phase bridge rectifier + brake chopper SKiiP 28ANB18V3 Tj = 25 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C VGES tpsc Tj A Ts = 70 °C 88 A 128 A Ts = 70 °C 104 A 100 A 200 A -20 ... 20 V 10 µs -40 ... 175 °C Values Unit 1700 V Ts = 25 °C 105 A Ts = 70 °C 76 A Ts = 25 °C 119 A Ts = 70 °C 93 A 150 A ICRM = 2 x ICnom VCC = 1200 V VGE ≤ 20 V VCES ≤ 1700 V V 115 Ts = 25 °C ICnom ICRM 1700 Tj = 150 °C Absolute Maximum Ratings Symbol Conditions Diode 1 Features • Trench IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Remarks • Max. case temperature limited to TC=125°C • Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C) • IGBT 1: brake chopper IGBT • Diode 1: brake chopper diode • Diode 4: rectifier diode • The distance between terminals of temperature sensor and –rect is not sufficient for basic insulation VRRM IF IF Tj = 25 °C Tj = 150 °C Tj = 175 °C IFnom IFRM IFRM = 2 x IFnom 300 A IFSM 10 ms, sin 180°, Tj = 150 °C 860 A -40 ... 175 °C Values Unit Tj Absolute Maximum Ratings Symbol Conditions Diode 4 1800 V Ts = 25 °C 139 A Ts = 70 °C 98 A VRRM IF Tj = 150 °C IFnom DC current 88 A IFSM 10 ms, sin 180°, Tj = 150 °C 890 A I2t 10 ms, sin. 180°, Tj = 150 °C 3900 A2s -40 ... 150 °C Values Unit Tj Absolute Maximum Ratings Symbol Conditions Module It(RMS) Tterminal = 80 °C, 20 A per spring Tstg Visol AC sinus 50 Hz, t = 1 min 80 A -40 ... 125 °C 2500 V ANB © by SEMIKRON Rev. 1 – 04.11.2014 1 SKiiP 28ANB18V3 Characteristics Symbol IGBT 1 VCE(sat) VCE0 MiniSKiiP® 2 3-phase bridge rectifier + brake chopper SKiiP 28ANB18V3 • Trench IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Remarks • Max. case temperature limited to TC=125°C • Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C) • IGBT 1: brake chopper IGBT • Diode 1: brake chopper diode • Diode 4: rectifier diode • The distance between terminals of temperature sensor and –rect is not sufficient for basic insulation IC = 100 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 2.00 2.40 V Tj = 150 °C 2.45 2.90 V Tj = 25 °C 1 1.2 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 10 12 mΩ rCE VGE = 15 V chiplevel VGE(th) VGE = VCE V, IC = 4 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 150 °C 16 18 mΩ 5.8 6.4 V Tj = 25 °C 0.1 0.3 mA f = 1 MHz 8.82 nF f = 1 MHz 0.37 nF f = 1 MHz 0.29 nF 934 nC - 8 V...+ 15 V RGint Tj = 25 °C VCC = 900 V Tj = 150 °C IC = 100 A Tj = 150 °C RG on = 1 Ω Tj = 150 °C RG off = 1 Ω di/dton = 3000 A/µs Tj = 150 °C di/dtoff = 600 A/µs Tj = 150 °C VGE neg = -15 V Tj = 150 °C VGE pos = 15 V per IGBT, λpaste=0.8 W/K*m tr Eon td(off) tf Eoff Rth(j-s) 5.2 mA QG td(on) Features Conditions 4.8 Ω 160 ns 35 ns 23 mJ 580 ns 150 ns 32.7 mJ 0.33 K/W Characteristics Symbol Diode 1 VF = VEC VF0 rF Conditions IF = 100 A VGE = 0 V chiplevel chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.8 2.1 V Tj = 150 °C 1.8 2.1 V Tj = 25 °C 1.3 1.6 V Tj = 150 °C 1.1 1.2 V Tj = 25 °C 4.4 5.4 mΩ 6.9 8.7 mΩ Err Tj = 150 °C IF = 100 A Tj = 150 °C di/dtoff = 4000 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C Rth(j-s) per Diode, λpaste=0.8 W/K*m IRRM Qrr 226 A 38.5 µC 26.4 mJ 0.58 K/W Characteristics Symbol Diode 4 VF = VEC VF0 rF Rth(j-s) Conditions IF = 88 A VGE = 0 V chiplevel chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.1 1.3 V Tj = 125 °C 1 1.3 V Tj = 25 °C 0.9 1.1 V Tj = 125 °C 0.7 1 V Tj = 25 °C 2.3 2.6 mΩ Tj = 125 °C 3 3.3 per Diode, λpaste=0.8 W/K*m 0.6 0.64 mΩ K/W ANB 2 Rev. 1 – 04.11.2014 © by SEMIKRON SKiiP 28ANB18V3 Characteristics Symbol Conditions min. typ. max. Unit Temperature Sensor R100 R(T) MiniSKiiP® 2 3-phase bridge rectifier + brake chopper 1670 ± 3% Tr=100°C (R25=1000Ω) R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2 Ω ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 Characteristics Symbol Conditions min. Ms to heat sink 2 w weight typ. max. Unit 2.5 Nm Module 55 g SKiiP 28ANB18V3 Features • Trench IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Remarks • Max. case temperature limited to TC=125°C • Product reliability results valid for Tj≤150°C (recommended Tj,op=-40...+150°C) • IGBT 1: brake chopper IGBT • Diode 1: brake chopper diode • Diode 4: rectifier diode • The distance between terminals of temperature sensor and –rect is not sufficient for basic insulation ANB © by SEMIKRON Rev. 1 – 04.11.2014 3 SKiiP 28ANB18V3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Typ. rated current vs. temperature IC = f(TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic 4 Rev. 1 – 04.11.2014 © by SEMIKRON SKiiP 28ANB18V3 Fig. 7: Transient thermal impedance of IGBT and Diode Fig. 8: CAL diode forward characteristic Fig. 9: Typ. input bridge forward characteristic © by SEMIKRON Rev. 1 – 04.11.2014 5 SKiiP 28ANB18V3 pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 6 Rev. 1 – 04.11.2014 © by SEMIKRON