datasheet

SKiiP 28ANB18V3
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT 1
VCES
IC
IC
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper
SKiiP 28ANB18V3
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Ts = 25 °C
VGES
tpsc
Tj
A
Ts = 70 °C
88
A
128
A
Ts = 70 °C
104
A
100
A
200
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Values
Unit
1700
V
Ts = 25 °C
105
A
Ts = 70 °C
76
A
Ts = 25 °C
119
A
Ts = 70 °C
93
A
150
A
ICRM = 2 x ICnom
VCC = 1200 V
VGE ≤ 20 V
VCES ≤ 1700 V
V
115
Ts = 25 °C
ICnom
ICRM
1700
Tj = 150 °C
Absolute Maximum Ratings
Symbol
Conditions
Diode 1
Features
• Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤150°C (recommended
Tj,op=-40...+150°C)
• IGBT 1: brake chopper IGBT
• Diode 1: brake chopper diode
• Diode 4: rectifier diode
• The distance between terminals of
temperature sensor and –rect is not
sufficient for basic insulation
VRRM
IF
IF
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
IFnom
IFRM
IFRM = 2 x IFnom
300
A
IFSM
10 ms, sin 180°, Tj = 150 °C
860
A
-40 ... 175
°C
Values
Unit
Tj
Absolute Maximum Ratings
Symbol
Conditions
Diode 4
1800
V
Ts = 25 °C
139
A
Ts = 70 °C
98
A
VRRM
IF
Tj = 150 °C
IFnom
DC current
88
A
IFSM
10 ms, sin 180°, Tj = 150 °C
890
A
I2t
10 ms, sin. 180°, Tj = 150 °C
3900
A2s
-40 ... 150
°C
Values
Unit
Tj
Absolute Maximum Ratings
Symbol
Conditions
Module
It(RMS)
Tterminal = 80 °C, 20 A per spring
Tstg
Visol
AC sinus 50 Hz, t = 1 min
80
A
-40 ... 125
°C
2500
V
ANB
© by SEMIKRON
Rev. 1 – 04.11.2014
1
SKiiP 28ANB18V3
Characteristics
Symbol
IGBT 1
VCE(sat)
VCE0
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper
SKiiP 28ANB18V3
• Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤150°C (recommended
Tj,op=-40...+150°C)
• IGBT 1: brake chopper IGBT
• Diode 1: brake chopper diode
• Diode 4: rectifier diode
• The distance between terminals of
temperature sensor and –rect is not
sufficient for basic insulation
IC = 100 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
2.00
2.40
V
Tj = 150 °C
2.45
2.90
V
Tj = 25 °C
1
1.2
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
10
12
mΩ
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE V, IC = 4 mA
ICES
VGE = 0 V
VCE = 1700 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 150 °C
16
18
mΩ
5.8
6.4
V
Tj = 25 °C
0.1
0.3
mA
f = 1 MHz
8.82
nF
f = 1 MHz
0.37
nF
f = 1 MHz
0.29
nF
934
nC
- 8 V...+ 15 V
RGint
Tj = 25 °C
VCC = 900 V
Tj = 150 °C
IC = 100 A
Tj = 150 °C
RG on = 1 Ω
Tj = 150 °C
RG off = 1 Ω
di/dton = 3000 A/µs Tj = 150 °C
di/dtoff = 600 A/µs Tj = 150 °C
VGE neg = -15 V
Tj = 150 °C
VGE pos = 15 V
per IGBT, λpaste=0.8 W/K*m
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
5.2
mA
QG
td(on)
Features
Conditions
4.8
Ω
160
ns
35
ns
23
mJ
580
ns
150
ns
32.7
mJ
0.33
K/W
Characteristics
Symbol
Diode 1
VF = VEC
VF0
rF
Conditions
IF = 100 A
VGE = 0 V
chiplevel
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.8
2.1
V
Tj = 150 °C
1.8
2.1
V
Tj = 25 °C
1.3
1.6
V
Tj = 150 °C
1.1
1.2
V
Tj = 25 °C
4.4
5.4
mΩ
6.9
8.7
mΩ
Err
Tj = 150 °C
IF = 100 A
Tj = 150 °C
di/dtoff = 4000 A/µs T = 150 °C
j
VGE = -15 V
Tj = 150 °C
Rth(j-s)
per Diode, λpaste=0.8 W/K*m
IRRM
Qrr
226
A
38.5
µC
26.4
mJ
0.58
K/W
Characteristics
Symbol
Diode 4
VF = VEC
VF0
rF
Rth(j-s)
Conditions
IF = 88 A
VGE = 0 V
chiplevel
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.1
1.3
V
Tj = 125 °C
1
1.3
V
Tj = 25 °C
0.9
1.1
V
Tj = 125 °C
0.7
1
V
Tj = 25 °C
2.3
2.6
mΩ
Tj = 125 °C
3
3.3
per Diode, λpaste=0.8 W/K*m
0.6
0.64
mΩ
K/W
ANB
2
Rev. 1 – 04.11.2014
© by SEMIKRON
SKiiP 28ANB18V3
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Temperature Sensor
R100
R(T)
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper
1670 ±
3%
Tr=100°C (R25=1000Ω)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2
Ω
], A = 7.635*10-3 °C-1,
B = 1.731*10-5 °C-2
Characteristics
Symbol
Conditions
min.
Ms
to heat sink
2
w
weight
typ.
max.
Unit
2.5
Nm
Module
55
g
SKiiP 28ANB18V3
Features
• Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤150°C (recommended
Tj,op=-40...+150°C)
• IGBT 1: brake chopper IGBT
• Diode 1: brake chopper diode
• Diode 4: rectifier diode
• The distance between terminals of
temperature sensor and –rect is not
sufficient for basic insulation
ANB
© by SEMIKRON
Rev. 1 – 04.11.2014
3
SKiiP 28ANB18V3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
4
Rev. 1 – 04.11.2014
© by SEMIKRON
SKiiP 28ANB18V3
Fig. 7: Transient thermal impedance of IGBT and Diode
Fig. 8: CAL diode forward characteristic
Fig. 9: Typ. input bridge forward characteristic
© by SEMIKRON
Rev. 1 – 04.11.2014
5
SKiiP 28ANB18V3
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
6
Rev. 1 – 04.11.2014
© by SEMIKRON
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