PANASONIC 2SK3046

Power F-MOS FETs
2SK3046
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 130mJ
● VGSS = ±30V guaranteed
● High-speed switching: tf = 60ns
● No secondary breakdown
unit: mm
3.0±0.5
φ3.2±0.1
1.4±0.2
13.7±0.2
4.2±0.2
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
Symbol
Unit
Drain to Source breakdown voltage
VDSS
500
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±7
A
Pulse
IDP
±14
A
EAS*
130
mJ
Avalanche energy capacity
*
Ratings
Allowable power
TC = 25°C
dissipation
Ta = 25°C
40
PD
2.6±0.1
1.6±0.2
0.8±0.1
■ Absolute Maximum Ratings (TC = 25°C)
Drain current
2.9±0.2
15.0±0.5
■ Applications
Parameter
4.6±0.2
9.9±0.3
1
2
0.55±0.15
2.54±0.3
3 5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 5.4mH, IL = 7A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 400V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 4A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 4A
Diode forward voltage
VDSF
IDR = 7A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
500
V
2
0.7
3
5
V
1
Ω
5
S
−1.6
V
1200
pF
160
pF
70
pF
Turn-on time (delay time)
td(on)
30
ns
Rise time
tr
VGS = 10V, ID = 5A
70
ns
Turn-off time (delay time)
td(off)
VDD = 150V, RL = 30Ω
140
ns
Fall time
tf
60
ns
1
Power F-MOS FETs
2SK3046
PD  Ta
Area of safe operation (ASO)
100
3
DC
100µs
1
1ms
0.3
10ms
0.1
100ms
0.03
100
(1) TC=Ta
(2) Without heat sink
Avalanche energy capacity EAS (mJ)
t=10µs
10
Allowable power dissipation PD (W)
60
Non repetitive pulse
TC=25˚C
30
Drain current ID (A)
EAS  Tj
50
40
(1)
30
20
10
(2)
0.01
0
1
3
10
30
100
300
1000
0
Drain to source voltage VDS (V)
20
40
60
ID  VDS
6V
8
5.5V
4
150˚C
25˚C
100˚C
6
4
2
5V
2
50W
4V
20
30
40
50
0
Drain to source voltage VDS (V)
2
4
ID=14A
10
7A
3.5A
0
0
5
10
15
20
25
30
Gate to source voltage VGS (V)
2
Drain to source ON-resistance RDS(on) (Ω)
20
1.75A
Drain to source voltage VDS (V)
30
175
5
4
3
2
1
6
8
10
12
0
25
50
75
100
125
150
Case temperature TC (˚C)
RDS(on)  ID
TC=25˚C
150
VDS=25V
ID=1mA
Gate to source voltage VGS (V)
VDS  VGS
40
125
0
0
60
| Yfs |  ID
2.4
6
VGS=10V
Forward transfer admittance |Yfs| (S)
0
100
Vth  TC
Gate threshold voltage Vth (V)
Drain current ID (A)
Drain current ID (A)
TC=0˚C
8
7V
75
VDS=25V
10V
10
50
Junction temperature Tj (˚C)
6
TC=25˚C
0
20
ID  VGS
14 VGS=15V
6
40
0
25
80 100 120 140 160
10
10
60
Ambient temperature Ta (˚C)
16
12
80
2.0
1.6
TC=150˚C
1.2
100˚C
0.8
25˚C
0˚C
0.4
0
VDS=25V
TC=25˚C
5
4
3
2
1
0
0
2
4
6
8
Drain current ID (A)
10
0
2
4
6
8
Drain current ID (A)
10
Power F-MOS FETs
2SK3046
Ciss, Coss, Crss  VDS
VDS, VGS  Qg
400
100
Coss
Crss
10
350
300
0
50
100
150
12
VDS
250
10
200
8
150
6
VGS
100
1
4
50
2
0
200
14
0
Drain to source voltage VDS (V)
10
20
30
40
0
60
50
Gate charge amount Qg (nC)
Switching time td(on),tr,tf,td(off) (ns)
Ciss
1000
300
16
ID=8A
TC=25˚C
Gate to source voltage VGS (V)
f=1MHz
TC=25˚C
Drain to source voltage VDS (V)
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10000
td(on), tr, tf, td(off)  ID
VDD=200V
VGS=10V
TC=25˚C
250
200
150
td(on)
100
tf
tr
50
td(off)
0
0
2
4
6
8
10
Drain current ID (A)
Rth(t)  t
Thermal resistance Rth(t) (˚C/W)
102
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
10
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3