Photo IC for laser beam synchronous detection S10317 series S11257 series Low voltage operation (3.3 V) The S10317/S11257 series photo IC use a high-speed PIN photodiode designed for laser beam synchronous detection. They operate at a low voltage (3.3 V) compatible with low-voltage peripheral components mounted on the same PC board. Two types of current amplifiers are available with a gain of 6 times (S10317-01, S11257-01DT) and 20 times (S10317, S11257-02DT) that can be selected according to laser power to be used. HAMAMATSU also provides a 5 V operation type (S9703 series) and dual-element Si PIN photodiode types (S9684 series, S11282-01DS). Features Applications Low voltage operation (3.3 V) Print start timing detection for laser printers, digital copiers, fax machines, etc. High sensitivity Current amplifier gain: 20 times (S10317, S11257-02DT) 6 times (S10317-01, S11257-01DT) Digital output Small package Suitable for lead-free solder reflow photosensitive area: 2.84 × 0.5 mm (S10317 series) 2.84 × 0.25 mm (S11257 series) Absolute maximum ratings Parameter Supply voltage Power dissipation*1 Output voltage*2 Output current Ro terminal current Operating temperature Storage temperature Reflow soldering conditions*3 Symbol Vcc P Vo Io IRO Topr Tstg Tsol Condition Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Value -0.5 to +7 300 -0.5 to +7 5 3 -25 to +80 -40 to +85 Peak temperature 240 °C max., 1 time Unit V mW V mA mA °C °C - *1: Power dissipation decreases at a rate of 4 mW/°C above Ta=25 °C. *2: Vcc=+0.5 V or less *3: JEDEC level 5a Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 Photo IC for laser beam synchronous detection S10317/S11257 series Electrical and optical characteristics (Ta=25 °C, λ=780 nm, Vcc=3.3 V, Ro=5.1 kΩ, light incident angle=normal line direction ±0°, unless otherwise noted) Parameter Symbol S10317 series S11257 series Recommended operation voltage Condition - Current consumption High level output voltage Low level output voltage S10317, S11257-02DT Threshold input power S10317-01, S11257-01DT H→L propagation delay S10317, S11257-02DT time S10317-01, S11257-01DT L→H propagation delay S10317, S11257-02DT time S10317-01, S11257-01DT Rise time Fall time Maximum input power Icc VOH VOL No input IOH=4 mA IOL=4 mA*4 PTH tPHL tPLH tr tf PI max. PI=57 μW (S10317, S11257-02DT) PI=186 μW (S10317-01, S11257-01DT) Duty ratio 1:1 CL=15 pF*5 Min. Typ. Max. Unit 3.13 3.135 3.3 3.3 3.6 3.45 V 2.9 14 49.5 - 0.7 19 62 130 100 200 150 4 4 - 1.5 0.3 24 74.5 250 200 300 250 7 7 PTH × 8 mA V V μW ns ns ns μW *4: Input power PI=57 μW (S10317, S11257-02DT), 186 μW (S10317-01, S11257-01DT) *5: Measured with a pulse-driven laser diode. Input light-pulse rise time and fall times are 1 ns or less. 100% Input light level 50% 0% tPHL tPLH 90% Output 1.5 V 10% tf tr KPICC0112EA Spectral response (Typ. Ta=25 °C) 0.5 Photosensitivity (A/W) 0.4 0.3 0.2 0.1 0 200 400 600 800 1000 1200 Wavelength (nm) KPICB0166EA 2 Photo IC for laser beam synchronous detection S10317/S11257 series Block diagram Vcc Vref Current amplifier Photodiode 0.1 μF 3.3 V Vo Ro External gain resistance Ro GND KPICC0127EA Function These products integrate a photodiode chip and an IC chip into the same package. The photodiode chip is internally connected to the IC chip as shown in the block diagram. The products should be used with terminal Ro connected to an external gain resistance Ro. A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and, after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages VRO at terminal Ro is given by the following expression. VRO=A × S × PI × Ro [V] ·········· (1) A: Current amplifier gain (S10317, S11257-02DT: 20 times, S10317-01, S11257-01DT: 6 times) S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm) PI: Input power [W] Ro: External gain resistance [Ω]; usable range 2 kΩ to 10 kΩ VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 0.8 V) so the output Vo is “High” when VRO < Vref or “Low” when VRO > Vref. We recommend that VRO be set higher than 1.5 V but lower than 8 times of VRO calculated from equation (1) where P1 is the threshold input power. Also set the Ro resistance so that the Ro terminal current does not exceed the absolute maximum rating of 3 mA. (Monitoring VRO shows that it is limited to about 2 V (with respect to GND) by the voltage limiting circuit. Keep this in mind when monitoring.) 3 Photo IC for laser beam synchronous detection S10317/S11257 series Dimensional outline (unit: mm) S10317 series 3.2 ± 0.2 (Including burr) 0.66 3.0* 1.0 ± 0.4 4.0* 3.9 3.4 Mirror area range 3.8 4.2 ± 0.2 0.8 0.8 0.8 0.8 0.15 2.84 1.0 ± 0.4 4.0* Photosensitive surface 0.5 (9 ×) 0.3 (9 ×) 0.4 Center of photosensitive area 0.05 0.35 5.0 ± 0.3 0.45 ± 0.3 0.75 3.0* 0.45 ± 0.3 2.8 Photosensitive surface Tolerance unless otherwise noted: ±0.1, ±2° Shaded area indicates burr. Chip position accuracy with respect to package dimensions marked * X, Y≤±0.2, θ≤±2° 0.1 ± 0.1 0.15 2.4 Mirror area range 1.3 Vcc NC OUT GND Ro 2.9 3.0* GND GND GND GND KPICA0070ED KPICA0070ED S11257 series 3.2 ± 0.2 (Including burr) 0.54 ± 0.2 (0.3) 1.0 ± 0.4 3.0* 3.9 4.0* 3.4 Mirror area range 3.8 4.0* 0.8 0.8 0.8 0.8 0.15 ± 0.2 4.2 ± 0.2 Photosensitive surface 0.25 2.84 (9 ×) 0.3 (9 ×) 0.4 Center of photosensitive area 0.05 1.0 ± 0.4 0.35 0.75 5.0 ± 0.3 0.45 ± 0.3 0.45 ± 0.3 2.8 Photosensitive surface 0.1 ± 0.1 2.4 Mirror area range 0.15 1.3 3.0* 2.9 3.0* Tolerance unless otherwise noted: ±0.1, ±2° Shaded area indicates burr. Values in parentheses indicate reference value. Chip position accuracy with respect to package dimensions marked * X, Y≤±0.2, θ≤2° Vcc NC OUT GND Ro GND GND GND GND KPICA0089EB 4 Photo IC for laser beam synchronous detection S10317/S11257 series Recommended land pattern (unit: mm) 1.65 0.8 0.7 4.75 KPICB0224EA Standard packing specifications Reel (conforms to JEITA ET-7200) Dimensions 254 mm Hub diameter 100 mm Tape width 12 mm Material PS Electrostatic characteristics Antistatic treatmet 8.0 ± 0.1 4.0 ± 0.1 1.55 ± 0.1 2.0 ± 0.1 1.75 ± 0.1 Embossed tape (unit: mm, material: PS, conductive) 0.3 ± 0.05 12.0 ± 0.3 4.5 ± 0.2 5.5 ± 0.1 2.3 ± 0.2 5.4 ± 0.2 Reel feed direction KPICC0225EA Packing quantity 2000 pcs/reel Packing type Reel and desiccant in moisture-proof packaging (vacuum-sealed) 5 Photo IC for laser beam synchronous detection S10317/S11257 series Measured example of temperature profile with our hot-air reflow oven for product testing 300 °C 240 °C max. Temperature 220 °C 190 °C 170 °C Preheat 70 ŵŰġ90 s Soldering 40 s max. Time KPICB0164EC ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 24 hours. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Surface mount type products / Precautions Information described in this material is current as of December, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KPIC1067E05 Dec. 2013 DN 6