Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET ■ Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS(on), high-speed switching characteristic Symbol Ratings Unit Drain to Source breakdown voltage VDSS 800 V Gate to Source voltage VGSS ±30 V DC ID ±3 A Pulse IDP ±6 A EAS* 20 mJ Drain current Avalanche energy capacity 16.7±0.3 2.7±0.2 4.2±0.2 0.7±0.1 Parameter 14.0±0.5 ■ Absolute Maximum Ratings (TC = 25°C) 5.5±0.2 φ3.1±0.1 4.0 ● High-speed switching (switching power supply, AC adaptor) ● For high-frequency power amplification 4.2±0.2 10.0±0.2 1.4±0.1 Solder Dip ■ Applications 7.5±0.2 unit: mm 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 * Allowable power TC = 25°C dissipation Ta = 25°C 50 PD 1 W 2 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 2 1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a) 3 Single pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions IDSS Gate to Source leakage current IGSS VGS = ±30V, VDS = 0 Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 800 Avalanche energy capacity EAS* L = 4.5mH, ID = 3A, VDD = 50V 20 Gate threshold voltage Vth VDS = 25V, ID = 1mA 1 Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 2A Forward transfer admittance | Yfs | VDS = 25V, ID = 2A typ VDS = 640V, VGS = 0 Unit 0.1 mA ±1 µA V mJ 3.2 5 V 4 Ω S 730 pF 90 pF Reverse transfer capacitance (Common Source) Crss 40 pF Turn-on time ton 40 ns Fall time tf 35 ns Turn-off time (delay time) td(off) 105 ns Output capacitance (Common Source) Coss VDS = 20V, VGS = 0, f = 1MHz VGS = 10V, ID = 2A VDD = 200V, RL = 100Ω 1.5 max 2.4 Input capacitance (Common Source) Ciss * min Drain to Source cut-off current Avalanche energy capacity test circuit L ID Gate PVS RGS VDS Drain C VDD Source 1 Power F-MOS FETs 2SK1611 | Yfs | ID 6 VGS=15V 10V 5 7V 6V 4 3 2 5V 50W 1 Forward transfer admittance |Yfs| (S) 3.2 TC=25˚C VDS=25V TC=25˚C 2.8 2.4 2.0 1.6 1.2 0.8 0.4 4V 0 0 0 10 20 30 40 50 60 0 Drain to source voltage VDS (V) 3 4 5 2 1 0 8 (1) 30 20 300 100 Coss 30 Crss 40 80 120 160 200 Ambient temperature Ta (˚C) 2 6 td(off) 100 80 60 ton 40 tf 0 1 2 3 4 5 6 Drain current ID (A) EAS Tj Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25˚C 30 10 IDP ID 3 t=1ms DC 1 0.3 10ms 0.1 0.01 80 100 120 140 160 5 120 240 0.03 60 4 0 10 (2) 40 3 20 10 0 2 VDD=200V VGS=10V TC=25˚C Drain to source voltage VDS (V) Drain current ID (A) 40 20 1 ton, tf, td(off) ID Ciss 0 (1) TC=Ta (2) Without heat sink (PD=2W) 0 0 140 10 PD Ta 50 15V 2 TC=25˚C Gate to source voltage VGS (V) 60 VGS=10V 0 Switching time ton,tf,td(off) (ns) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 3 6 4 160 1000 4 4 6 Drain current ID (A) 3000 2 8 Ciss, Coss, Crss VDS 5 0 TC=25˚C 6 10000 VDS=25V TC=25V Drain current ID (A) 2 10 Drain current ID (A) ID VGS 6 Allowable power dissipation PD (W) 1 1 3 10 30 100 300 1000 Drain to source voltage VDS (V) Avalanche energy capacity EAS (mJ) Drain current ID (A) RDS(on) ID Drain to source ON-resistance RDS(on) (Ω) ID VDS ID=3A VDD=50V 25 20 15 10 5 0 25 50 75 100 125 150 175 Junction temperature Tj (˚C)