1n1183a.pdf

1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307
1N1183 ... 1N1190, 1N3766, 1N3768,
PBY301 ... PB307
Silicon-Power-Rectifiers
Silizium-Leistungs-Gleichrichter
Version 2007-05-09
Nominal Current
Nennstrom
13.6
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
14.5
Ø 4+0.5
SW17
M6
50 ... 1000 V
36.7
Metal case
Metallgehäuse
DO-5
Weight approx.
Gewicht ca.
6g
Standard polarity: Cathode to stud / Kathode am Gewinde
Index R: Anode to stud / Anode am Gewinde (e. g. 1N1183R)
10.7
Type
35 A
Standard packaging: bulk
Standard Lieferform: lose im Karton
Dimensions - Maße [mm]
Maximum ratings
Type
Typ
Grenzwerte
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
1N1183 = PBY301
50
60
1N1184 = PBY302
100
120
1N1186 = PBY303
200
240
1N1188 = PBY304
400
480
1N1190 = PBY305
600
720
1N3766 = PBY306
800
1000
1N3768 = PBY307
1000
1200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
35 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
110 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
450/500 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
1000 A2s
Tj
TS
-65...+175°C
-65...+175°C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
Max. case temperature TC = 100°C – Max. Gehäusetemperatur TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307
Characteristics
Kennwerte
Forward Voltage – Durchlass-Spannung
Tj = 25°C
IF = 100 A
VF
< 1.5 V
Leakage Current – Sperrstrom
Tj = 25°C
VR = VRRM
IR
< 500 µA
Thermal Resistance Junction – Case
Wärmewiderstand Sperrschicht – Gehäuse
RthC
< 1 K/W
Recommended mounting torque
Empfohlenes Anzugsdrehmoment
M6
26 ± 10% lb.in.
3 ± 10% Nm
120
103
[%]
[A]
100
102
80
Tj = 125°C
10
60
Tj = 25°C
40
1
20
IF
IFAV
10-1
0
0
TC
100
50
150
[°C]
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
450a-(100a-1,5v)
0.4
VF
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
103
[A]
2
10
îF
10
1
2
10
102
[n]
103
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
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© Diotec Semiconductor AG
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