Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −7 A Peak collector current ICP −15 A Collector power PC 40 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Ta = 25°C dissipation 16.7±0.3 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C 2.7±0.2 φ 3.1±0.1 1.4±0.1 Solder Dip (4.0) • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw 5.5±0.2 7.5±0.2 ■ Features 4.2±0.2 4.2±0.2 0.7±0.1 Unit: mm 10.0±0.2 1.3±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 2 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0 Conditions Min Typ Max Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0 −10 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −50 µA hFE1 −80 Unit V VCE = −2 V, IC = − 0.1 A 45 hFE2 * VCE = −2 V, IC = −3 A 60 Collector-emitter saturation voltage VCE(sat) IC = −5 A, IB = − 0.25 A − 0.5 V Base-emitter saturation voltage VBE(sat) IC = −5 A, IB = − 0.25 A −1.5 V Forward current transfer ratio 260 Transition frequency fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = −3 A, IB1 = − 0.3 A, IB2 = 0.3 A 0.5 µs Storage time tstg VCC = −50 V 1.5 µs Fall time tf 0.1 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R Q P hFE2 60 to 120 90 to 180 130 to 260 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2003 SJD00025BED 1 2SB0946 PC Ta IC VCE 40 (1) 20 −6 –60mA –40mA −4 –30mA –20mA −2 (2) (3) IB=–120mA –110mA –100mA –90mA –80mA –70mA −8 30 10 Collector-emitter saturation voltage VCE(sat) (V) TC=25˚C (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) IC −100 −10 50 0 –10mA 80 120 160 −2 0 −4 VBE(sat) IC Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) −10 TC=–25˚C 100˚C 25˚C − 0.1 − 0.01 − 0.01 − 0.1 −1 −1 –25˚C 10 −1 IE=0 f=1MHz TC=25˚C −10 103 102 10 −100 100 103 102 10 1 − 0.01 −100 −2 −4 −6 Collector current IC (A) SJD00025BED Non repetitive pulse TC=25˚C ICP ton tf 0 −10 Safe operation area tstg 0.01 −1 −100 1 0.1 − 0.1 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V TC=25˚C 10 −100 VCE=–10V f=10MHz TC=25˚C 25˚C 102 −10 Collector current IC (A) ton, tstg, tf IC Turn-on time ton , Storage time tstg , Fall time tf (µs) Collector output capacitance C (pF) (Common base, input open circuited) ob − 0.01 − 0.1 Collector current IC (A) Collector-base voltage VCB (V) 2 25˚C fT I C TC=100˚C Cob VCB −10 –25˚C 104 103 1 − 0.1 −10 104 −1 −10 VCE=–2V Collector current IC (A) 1 − 0.1 TC=100˚C hFE IC 104 IC/IB=20 −1 −8 −1 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −100 −6 Transition frequency fT (MHz) 40 Collector current IC (A) 0 −10 − 0.1 (4) 0 IC/IB=20 −10 IC t=0.5ms t=1ms t=10ms −1 DC − 0.1 −8 –0.01 −1 −10 −100 −1 000 Collector-emitter voltage VCE (V) 2SB0946 Rth t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink 102 (1) (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00025BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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