PANASONIC 2SC4559

Power Transistors
2SC4559
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
0.7±0.1
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
VCES
500
V
VCEO
400
V
Collector to emitter voltage
4.2±0.2
7.5±0.2
16.7±0.3
φ3.1±0.1
1.4±0.1
0.8±0.1
VEBO
7
V
Peak collector current
ICP
15
A
Collector current
IC
7
A
Base current
IB
3
A
Collector power TC=25°C
dissipation
Ta=25°C
40
PC
Junction temperature
Tj
Storage temperature
Tstg
2.54±0.25
5.08±0.5
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
W
2.0
■ Electrical Characteristics
1.3±0.2
0.5 +0.2
–0.1
1
Emitter to base voltage
2.7±0.2
4.0
●
High collector to emitter VCEO
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
14.0±0.5
●
4.2±0.2
5.5±0.2
Solder Dip
■ Features
●
10.0±0.2
150
˚C
–55 to +150
˚C
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
Unit
100
µA
100
µA
ICBO
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
400
hFE1
VCE = 5V, IC = 0.1A
10
hFE2
VCE = 5V, IC = 3A
8
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.6A
1.0
V
Base to emitter saturation voltage
VBE(sat)
IC = 3A, IB = 0.6A
1.5
V
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Forward current transfer ratio
VCB = 500V, IE = 0
max
Collector cutoff current
IC = 3A, IB1 = 0.6A, IB2 = –1.2A,
VCC = 150V
V
5.5
MHz
1.0
µs
3.0
µs
0.3
µs
1
Power Transistors
2SC4559
IC — VCE
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
70
60
Collector current IC (A)
Collector power dissipation PC (W)
VCE(sat) — IC
5
50
(1)
40
30
20
IB=300mA
4
250mA
200mA
3
150mA
100mA
2
80mA
60mA
40mA
1
(2)
10
20mA
(3)
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
TC=–25˚C
100˚C
0.3
0.1
0.03
0.3
1
3
100
25˚C
TC=100˚C
30
–25˚C
10
3
1
0.3
0.1
0.3
1
3
0.3
1
Switching time ton,tstg,tf (µs)
300
100
30
10
3
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
(2IB1=–IB2)
VCC=150V
TC=25˚C
VCE=10V
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.1
0.3
1
3
10
10
3
tstg
1
ton
0.3
tf
0.1
Non repetitive pulse
TC=25˚C
30
ICP
IC
10
t=0.5ms
3
1ms
1
10ms
0.3
DC
0.1
0.03
0.01
0.01
Collector to base voltage VCB (V)
10
Area of safe operation (ASO)
0.03
100
3
100
30
1000
30
0.1
Collector current IC (A)
ton, tstg, tf — IC
IE=0
f=1MHz
TC=25˚C
10
0.01
0.01 0.03
0.1
0.01 0.03
10
100
3
0.03
Collector current IC (A)
Cob — VCB
1
–25˚C
0.1
0.3
0.1
0.01 0.03
10
10000
0.3
TC=100˚C
0.3
fT — IC
300
Collector current IC (A)
3000
25˚C
1
Collector current IC (A)
Transition frequency fT (MHz)
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
3
0.1
3
VCE=5V
10
1
10
1000
IC/IB=5
25˚C
IC/IB=5
30
hFE — IC
30
1
0.1
10
1000
0.01
0.01 0.03
Collector output capacitance Cob (pF)
8
100
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
2
6
Collector current IC (A)
0
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
80
0
1
2
3
4
5
6
7
Collector current IC (A)
8
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Power Transistors
2SC4559
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
16
Lcoil=200µH
IC/IB=5
(IB1=–IB2)
TC=25˚C
Collector current IC (A)
14
L coil
12
IB1
10
–IB2
Vin
8
T.U.T
IC
VCC
IC
6
4
Vclamp
tW
2
0
0
100
200
300
400
500
Collector to emitter voltage VCE (V)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
102
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3