Composite Transistors XN4609 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output (Tr1) For general amplification (Tr2) +0.2 2.8 –0.3 +0.25 ■ Tr1 0.95 0.95 3 +0.1 +0.1 0.1 to 0.3 2SD1328+2SB709A 0.4±0.2 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) Absolute Maximum Ratings (Ta=25˚C) Parameter 4 Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V Collector current IC 0.5 A Peak collector current ICP 1 A Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –7 V Collector current IC –100 mA Peak collector current ICP –200 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5F Internal Connection 6 Tr2 0 to 0.05 ● 2 0.16–0.06 ■ Basic Part Number of Element 5 0.8 +0.2 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. +0.2 ● 1.1–0.1 ● 2.9 –0.05 ■ Features 1.9±0.1 +0.1 6 1.45±0.1 0.65±0.15 1 0.5 –0.05 1.5 –0.05 0.3 –0.05 0.65±0.15 Tr1 2 5 4 1 Tr2 3 1 Composite Transistors ■ Electrical Characteristics ● XN4609 (Ta=25˚C) Tr1 Parameter Collector to base voltage Symbol Conditions typ max Unit IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 12 V Collector cutoff current ICBO VCB = 25V, IE = 0 hFE1 VCE = 2V, IC = 0.5A*1 200 hFE2 VCE = 2V, IC = 1A*1 60 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 20mA Base to emitter saturation voltage VBE(sat) IC = 0.5A, IB = 20mA Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz ON Resistance Ron*2 Forward current transfer ratio ● 0.1 µA 800 0.13 0.4 1.2 V V 200 MHz 10 pF 1.0 Ω Tr2 Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 ICBO VCB = –20V, IE = 0 Collector cutoff current ICEO VCE = –10V, IE = 0 Forward current transfer ratio hFE VCE = –10V, IC = –2mA V 160 – 0.1 µA –100 µA 460 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA – 0.3 V Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF *1 Pulse measurement *2 Ron test circuit 1kΩ IB=1mA VB VV VB Ron= ✕1000(Ω) VA–VB 2 min VCBO VA f=1kHz V=0.3V Composite Transistors XN4609 Common characteristics chart PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) Characteristics charts of Tr1 IC — VCE VCE(sat) — IC 1.2 100 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.2 0.5mA 0 1 2 3 4 5 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 6 Collector to emitter voltage VCE (V) 0.1 0.3 hFE — IC Transition frequency fT (MHz) Forward current transfer ratio hFE 800 Ta=75˚C 25˚C –25˚C 200 0.3 1 Collector current IC 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.1 3 (A) 10 1 3 10 Cob — VCB VCB=10V Ta=25˚C 350 300 250 200 150 100 0 –1 0.3 Collector current IC (A) 24 50 0.1 10 fT — I E 1000 0 0.01 0.03 30 0.01 0.01 0.03 10 400 VCE=2V 400 3 IC/IB=10 Collector current IC (A) 1200 600 1 Collector output capacitance Cob (pF) 0 IC/IB=25 Base to emitter saturation voltage VBE(sat) (V) IB=4.0mA 1.0 Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C VBE(sat) — IC 100 f=1MHz IE=0 Ta=25˚C 20 16 12 8 4 0 –2 –3 –5 –10 –20 –30 –50 –100 Emitter current IE (mA) 1 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V) 3 Composite Transistors XN4609 Characteristics charts of Tr2 IC — VCE IC — I B Ta=25˚C –200µA –150µA –20 –100µA –10 Base current IB (µA) –250µA –40 –30 –40 –30 –20 –200 –150 –100 –50 0 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –100 –200 –300 IC — VBE 25˚C –25˚C –160 –120 –80 –40 –3 Ta=75˚C 25˚C –0.3 –25˚C –0.1 –0.03 –0.01 –0.003 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 –0.001 –1 Base to emitter voltage VBE (V) fT — IE 80 60 40 20 3 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 –1 –100 –300 –1000 –3 10 Emitter current IE 30 (mA) 100 –10 –30 –100 –300 –1000 Collector current IC (mA) NF — IE 6 f=1MHz IE=0 Ta=25˚C 7 6 5 4 3 2 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C 5 Noise figure NF (dB) Collector output capacitance Cob (pF) 100 1 500 Cob — VCB VCB=–10V Ta=25˚C 0.3 –30 8 120 0 0.1 –10 –1.6 VCE= –10V Collector current IC (mA) 160 140 –3 –1.2 hFE — IC IC/IB=10 –1 –0.8 600 Forward current transfer ratio hFE VCE=–5V Collector to emitter saturation voltage VCE(sat) (V) –10 Ta=75˚C –0.4 Base to emitter voltage VBE (V) VCE(sat) — IC –240 –200 0 –400 Base current IB (µA) Collector to emitter voltage VCE (V) Transition frequency fT (MHz) –250 0 0 4 –300 –10 –50µA 0 VCE=– 5V Ta=25˚C –350 –50 Collector current IC (mA) Collector current IC (mA) VCE= – 5V Ta=25˚C IB=–300µA –50 Collector current IC (mA) IB — VBE –400 –60 –60 4 3 2 1 1 0 –1 –2 –3 –5 –10 –20–30 –50 –100 Collector to base voltage VCB (V) 0 0.01 0.03 0.1 0.3 1 3 Emitter current IE (mA) 10 Composite Transistors XN4609 NF — IE 20 18 h Parameter — IE VCB=–5V Rg=50kΩ Ta=25˚C 300 300 200 200 hfe hfe 16 IE=2mA f=270Hz Ta=25˚C 100 100 14 f=100Hz 10 1kHz 8 hoe (µS) 30 20 10 50 30 20 hoe (µS) 10 10kHz 6 5 4 5 hie (kΩ) 3 3 VCE= – 5V f=270Hz Ta=25˚C 2 2 0 0.1 50 Parameter h 12 Parameter h Noise figure NF (dB) h Parameter — VCE 0.2 0.3 0.5 1 2 3 5 Emitter current IE (mA) 10 1 0.1 hre 0.2 0.3 0.5 (×10–4) 1 2 3 5 Emitter current IE (mA) 10 hre (×10–4) hie (kΩ) 2 1 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to emitter voltage VCE (V) 5