Data Sheet

LFP
AK
56
D
PHPT610035PK
PNP/PNP matched high power double bipolar transistor
24 October 2014
Product data sheet
1. General description
PNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D)
Surface-Mounted Device (SMD) power plastic package. Matched version of
PHPT610030PK.
NPN/NPN complement: PHPT610035NK.
2. Features and benefits
•
•
•
•
•
•
Current gain matching 10 %
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Current mirror
Motor control
Power management
Backlighting applications
Relay replacement
Differential amplifiers
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-100
V
IC
collector current
-
-
-3
A
-
110
180
mΩ
Per transistor
Per transistor
RCEsat
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Scan or click this QR code to view the latest information for this product
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
E1
emitter TR1
2
B1
base TR1
3
E2
emitter TR2
4
B2
base TR2
5
C2
collector TR2
6
C2
collector TR2
7
C1
collector TR1
8
C1
collector TR1
Simplified outline
8
7
6
Graphic symbol
5
C1
B2
TR2
TR1
E1
E2
B1
C2
sym138
1
2
3
4
LFPAK56D (SOT1205)
6. Ordering information
Table 3.
Ordering information
Type number
PHPT610035PK
PHPT610035PK
Product data sheet
Package
Name
Description
Version
LFPAK56D
Plastic single ended surface mounted package (LFPAK56D); 8
leads
SOT1205
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
-100
V
VCEO
collector-emitter voltage
open base
-
-100
V
VEBO
emitter-base voltage
open collector
-
-8
V
IC
collector current
-
-3
A
ICM
peak collector current
-
-8
A
IB
base current
-
-0.5
A
Ptot
total power dissipation
[1]
-
1
W
[2]
-
2.4
W
[3]
-
25
W
[1]
-
1.25
W
[2]
-
3
W
[4]
-
5
W
Per transistor
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
[1]
[2]
[3]
[4]
PHPT610035PK
Product data sheet
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Power dissipation from junction to mounting base.
Device mounted on a ceramic PCB, Al2O3, standard footprint.
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
3 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
aaa-014341
4
Ptot
(W)
3
(1)
2
1
(2)
0
-75
0
75
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, standard footprint
Fig. 1.
150
225
Tamb (°C)
2
Per transistor: power derating curves
8. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
Min
Typ
Max
Unit
[1]
-
-
150
K/W
[2]
-
-
62.5
K/W
-
-
6
K/W
[1]
-
-
120
K/W
[2]
-
-
50
K/W
[3]
-
-
30
K/W
Per transistor
Rth(j-a)
Rth(j-sp)
thermal resistance
from junction to solder
point
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
[1]
[2]
[3]
PHPT610035PK
Product data sheet
in free air
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
aaa-014342
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
10
0.1
0.05
0.02
0.01
0
1
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 2.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
aaa-014343
102
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.33
10
0.2
0.5
0.25
0.1
0.05
1
0.01
10-1
10-5
0.02
0
10-4
10-3
10-2
FR4 PCB, mounting pad for collector 6 cm
Fig. 3.
10-1
1
10
102
tp (s)
103
2
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PHPT610035PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
hFE1/hFE2
hFE matching
VCE = -2 V; IC = 1 A
0.9
1
1.1
collector-base cut-off
current
VCB = -80 V; IE = 0 A; Tamb = 25 °C
-
-
-100
nA
VCB = -80 V; IE = 0 A; Tj = 150 °C
-
-
-50
µA
Unit
Per transistor
ICBO
ICES
collector-emitter cut-off VCE = -80 V; VBE = 0 V; Tamb = 25 °C
current
-
-
-100
nA
IEBO
emitter-base cut-off
current
VEB = -7 V; IC = 0 A; Tamb = 25 °C
-
-
-100
nA
hFE
DC current gain
VCE = -10 V; IC = -500 mA;
150
220
-
80
210
-
20
100
-
VCE = -2 V; IC = -1 A; Tamb = 25 °C
100
200
-
VCE = -10 V; IC = -3 A; pulsed;
10
40
-
-
-70
-110
mV
IC = -2 A; IB = -200 mA; pulsed;
-
-220
-360
mV
RCEsat
collector-emitter
saturation resistance
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
-
110
180
mΩ
VBEsat
base-emitter saturation IC = -1 A; IB = -50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-0.91
-1
V
-
-1.02
-1.2
V
-
-0.68
-0.9
V
Tamb = 25 °C
VCE = -10 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -10 V; IC = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -100 mA; pulsed;
td
delay time
VCC = -12.5 V; IC = -1 A; IBon = -50 mA;
-
20
-
ns
tr
rise time
IBoff = 50 mA; Tamb = 25 °C
-
180
-
ns
ton
turn-on time
-
200
-
ns
ts
storage time
-
350
-
ns
tf
fall time
-
220
-
ns
toff
turn-off time
-
570
-
ns
PHPT610035PK
Product data sheet
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
6 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fT
transition frequency
VCE = -10 V; IC = -100 mA;
-
125
-
MHz
-
30
-
pF
f = 100 MHz; Tamb = 25 °C
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
aaa-010858
500
hFE
aaa-010859
-2.5
IC
(A)
(1)
400
IB = -50 mA
-45
-40
-35
-2.0
-30
-25
-20
(2)
300
-1.5
-15
-10
200
-1.0
(3)
100
0
-10-1
-0.5
-1
-10
-102
0
-103
-104
IC (mA)
VCE = −10 V
0
-1
-2
-3
-4
VCE (V)
-5
Tamb = 25 °C
(1) Tamb = 100 °C
Fig. 5.
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4.
-5
Collector current as a function of collectoremitter voltage; typical values
DC current gain as a function of collector
current; typical values
PHPT610035PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
aaa-010860
-1.6
aaa-010861
-1.2
VBEsat
(V)
VBE
(V)
-1.0
-1.2
(1)
-0.8
(1)
-0.8
(2)
(2)
-0.6
(3)
(3)
-0.4
0
-10-1
Fig. 6.
-0.4
-1
-102
-10
-0.2
-10-1
-103
-104
IC (mA)
-1
-10
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
Fig. 7.
aaa-010862
-10
-102
-103
-104
IC (mA)
Base-emitter saturation voltage as a function of
collector current; typical values
aaa-010863
-10
VCEsat
(V)
VCEsat
(V)
-1
-1
(1)
(2)
-10-1
-10-1
(1)
(3)
(2)
-10-2
-10-3
-10-1
Fig. 8.
-10-2
-1
-10
-102
-10-3
-10-1
-103
-104
IC (mA)
(3)
-1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = −55 °C
(3) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
PHPT610035PK
Product data sheet
Fig. 9.
-102
-103
-104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
24 October 2014
-10
© NXP Semiconductors N.V. 2014. All rights reserved
8 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
aaa-010864
103
aaa-010865
103
RCEsat
RCEsat
(Ω)
102
102
10
10
(1)
(2)
1
(2)
10-1
10-2
-10-1
(1)
1
(3)
(3)
10-1
-1
-10
-102
10-2
-10-1
-103
-104
IC (mA)
-1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PHPT610035PK
Product data sheet
-10
-102
-103
-104
IC (mA)
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
9 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
10. Test information
- IB
input pulse
(idealized waveform)
90 %
- I Bon (100 %)
10 %
- I Boff
output pulse
(idealized waveform)
- IC
90 %
- I C (100 %)
10 %
t
td
ts
tr
t on
tf
t off
006aaa266
Fig. 12. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
mgd624
Fig. 13. Test circuit for switching times
10.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PHPT610035PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
10 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
11. Package outline
Plastic single ended surface mounted package LFPAK56D; 8 leads
E
SOT1205
A
A
b1
c1
L1
mounting
base
D
H
D1
D2
L
1
2
3
e
b
(8x)
4
w
X
c
A
E1
E2
A1
C
θ
Lp
detail X
0
2.5
A
max 1.05
nom
min
mm
5 mm
scale
Dimensions
Unit
y C
c
c1
D(1) D1(1)
A1
b
b1
0.1
0.50
4.4
0.25 0.30 4.70
0.0
0.35
4.1
0.19 0.24 4.45
4.8
D2
(ref)
3.5
E(1) E1(1)
5.30
1.8
4.95
1.6
E2
0.85
e
1.27
H
L
L1
Lp
6.2
1.3
0.55 0.85
5.9
0.8
0.30 0.40
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
Outline
version
References
IEC
JEDEC
JEITA
w
y
θ
0.25
0.1
8°
0°
sot1205_po
European
projection
Issue date
13-02-21
14-08-21
SOT1205
Fig. 14. Package outline LFPAK56D (SOT1205)
PHPT610035PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
12. Soldering
Footprint information for reflow soldering of LFPAK56D package
SOT1205
5.85
3.81
1.27
0.7 (4x)
3.2
3.175
3.325
2.0
1.275
0.8
1.875
2.1
1.0 (2x)
2.7
3.85 3.975
0.0625
0.025
0.7 (4x)
1.44
1.27
1.1 (2x)
3.81
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot1205_fr
Fig. 15. Reflow soldering footprint for LFPAK56D (SOT1205)
PHPT610035PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
12 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
13. Revision history
Table 7.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PHPT610035PK v.1
20141024
Product data sheet
-
-
PHPT610035PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
13 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
14. Legal information
14.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
14.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
14.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PHPT610035PK
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
14 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
14.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PHPT610035PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
15 / 16
PHPT610035PK
NXP Semiconductors
PNP/PNP matched high power double bipolar transistor
15. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Limiting values .......................................................3
8
Thermal characteristics .........................................4
9
Characteristics ....................................................... 6
10
10.1
Test information ................................................... 10
Quality information ............................................. 10
11
Package outline ................................................... 11
12
Soldering .............................................................. 12
13
Revision history ................................................... 13
14
14.1
14.2
14.3
14.4
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 October 2014
PHPT610035PK
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
16 / 16