Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SC5244 base voltage 2SC5244A Collector to 2SC5244 emitter voltage 2SC5244A Ratings 1500 VCBO 1600 1500 VCES 1600 V Peak collector current ICP 20 A Collector current IC 30 A Ta=25°C dissipation 200 PC Junction temperature Tj Storage temperature Tstg 3.5 ■ Electrical Characteristics 2SC5244 current 2SC5244A 4.0 2.0 2.0 10.0 5.45±0.3 10.9±0.5 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package W 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Collector cutoff 0.6±0.2 1 6 2.7±0.3 1.0±0.2 V VEBO 1.5 2.0±0.3 3.0±0.3 V Emitter to base voltage Collector power TC=25°C 26.0±0.5 Unit 1.5 Solder Dip ● 1.5 ● High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) 20.0±0.5 2.5 ● 6.0 ■ Features 3.0 20.0±0.5 Symbol ICBO Conditions min typ max VCB = 1500V, IE = 0 1 VCB = 1600V, IE = 0 1 50 Emitter cutoff current IEBO VEB = 5V, IC = 0 5 Unit mA µA Forward current transfer ratio hFE VCE = 5V, IC = 10A Collector to emitter saturation voltage VCE(sat) IC = 10A, IB = 2.8A 12 Base to emitter saturation voltage VBE(sat) IC = 10A, IB = 2.8A Transition frequency fT VCE = 10V, IC = 0.1A, f = 0.5MHz Storage time tstg IC = 12A, IB1 = 2.4A, IB2 = –4.8A, 1.5 2.5 µs Fall time tf Resistance loaded 0.12 0.2 µs 3 1.5 3 V V MHz 1 Power Transistors 2SC5244, 2SC5244A PC — Ta IC — VCE (1) 180 14 160 140 120 100 80 60 12 IB=1000mA 800mA 600mA 10 400mA 8 200mA 6 4 40 (3) 20 2 0 TC=100˚C 25˚C 10 –25˚C 1 40 60 80 100 120 140 160 0 2 VCE(sat) — IC 8 10 3 1 0.3 0.1 TC=–25˚C 25˚C 0.3 100˚C 1 3 10 30 10 TC=–25˚C 25˚C 100˚C 0.1 10 100 Collector current IC (A) Rth(t) — t Note: Rth was measured at Ta=25˚C and under natural convection (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 100 (1) 10 (2) 1 0.1 10–1 1 Time t (s) 20 0 1 1000 10–2 30 <1mA Collector current IC (A) 10–3 40 10 0.01 0.1 100 10 10 f=64kHz, TC=25˚C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation IC/IB=3.5 1 1 Area of safe operation, horizontal operation ASO 50 Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 10 0.1 Collector current IC (A) VBE(sat) — IC 30 0.01 10–4 0.1 0.01 12 100 IC/IB=3.5 0.01 0.1 6 Collector to emitter voltage VCE (V) 100 0.03 4 2SC5244 2SC5244A 20 Ambient temperature Ta (˚C) Thermal resistance Rth(t) (˚C/W) 100 (2) 0 2 VCE=5V Forward current transfer ratio hFE 200 1000 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.0W) 220 0 Collector to emitter saturation voltage VCE(sat) (V) hFE — IC 16 Collector current IC (A) Collector power dissipation PC (W) 240 102 103 104 0 400 800 1200 1600 2000 Collector to emitter voltage VCE (V)