Data Sheet

PBSS4620PA
20 V, 6 A NPN low VCEsat (BISS) transistor
Rev. 01 — 18 May 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5620PA.
1.2 Features and benefits
„
„
„
„
„
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
„
„
„
„
„
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
20
V
IC
collector current
-
-
6
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
-
7
A
RCEsat
collector-emitter
saturation resistance
IC = 6 A;
IB = 300 mA
-
33
46
mΩ
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[1]
PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
base
2
emitter
3
collector
Simplified outline
Graphic symbol
3
3
1
2
1
sym021
2
Transparent top view
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PBSS4620PA
Description
Version
HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
no leads; three terminals; body 2 × 2 × 0.65 mm
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS4620PA
A6
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
PBSS4620PA
Product data sheet
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
20
V
VCEO
collector-emitter voltage
open base
-
20
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
6
A
ICM
peak collector current
-
7
A
IB
base current
Ptot
total power dissipation
single pulse;
tp ≤ 1 ms
Tamb ≤ 25 °C
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
-
600
mA
[1]
-
500
mW
[2]
-
1
W
[3]
-
1.4
W
[4]
-
2.1
W
© NXP B.V. 2010. All rights reserved.
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PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Tj
Conditions
Min
Max
Unit
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aab978
2.5
Ptot
(W)
(1)
2.0
1.5
(2)
(3)
1.0
(4)
0.5
0.0
−75
−25
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
PBSS4620PA
Product data sheet
Conditions
thermal resistance from
junction to ambient
in free air
Min
Typ
Max
Unit
[1]
-
-
250
K/W
[2]
-
-
125
K/W
[3]
-
-
90
K/W
[4]
-
-
60
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
3 of 15
PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
006aab979
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab980
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4620PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
4 of 15
PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
006aab981
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab982
102
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
1
0.01
0
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4620PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base
cut-off current
VCB = 16 V; IE = 0 A
-
-
100
nA
VCB = 16 V; IE = 0 A;
Tj = 150 °C
-
-
50
μA
ICES
collector-emitter
cut-off current
VCE = 16 V; VBE = 0 V
-
-
100
nA
IEBO
emitter-base
cut-off current
VEB = 5 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 2 V
IC = 0.5 A
280
440
-
IC = 1 A
270
430
-
IC = 2 A
260
415
-
[1]
IC = 6 A
VCEsat
Product data sheet
330
-
IC = 0.5 A; IB = 50 mA
-
20
30
mV
IC = 1 A; IB = 50 mA
[1]
-
37
55
mV
IC = 1 A; IB = 10 mA
[1]
-
50
70
mV
IC = 2 A; IB = 20 mA
[1]
-
85
120
mV
IC = 3 A; IB = 30 mA
[1]
-
120
170
mV
IC = 4 A; IB = 400 mA
[1]
-
135
185
mV
IC = 6 A; IB = 300 mA
[1]
-
200
275
mV
-
33
46
mΩ
RCEsat
collector-emitter
saturation resistance
IC = 6 A; IB = 300 mA
[1]
VBEsat
base-emitter
saturation voltage
IC = 1 A; IB = 10 mA
[1]
-
0.75
0.9
V
IC = 6 A; IB = 300 mA
[1]
-
0.97
1.1
V
[1]
-
0.74
0.9
V
VBEon
base-emitter
turn-on voltage
VCE = 2 V; IC = 2 A
td
delay time
tr
rise time
ton
turn-on time
VCC = 9 V; IC = 2 A;
IBon = 0.1 A;
IBoff = −0.1 A
ts
storage time
tf
fall time
-
50
-
ns
toff
turn-off time
-
335
-
ns
fT
transition frequency
VCE = 10 V;
IC = 100 mA;
f = 100 MHz
50
80
-
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
80
95
pF
[1]
PBSS4620PA
collector-emitter
saturation voltage
200
[1]
-
25
-
ns
-
55
-
ns
-
80
-
ns
-
285
-
ns
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
6 of 15
PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
006aac120
800
006aac121
8
IC
(A)
hFE
IB (mA) = 20
(1)
18
6
600
16
14
(2)
12
400
4
10
8
(3)
6
2
200
4
2
0
10−1
1
102
10
0
0.0
103
104
IC (mA)
1.0
2.0
3.0
4.0
5.0
VCE (V)
Tamb = 25 °C
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 6.
DC current gain as a function of collector
current; typical values
Fig 7.
006aac122
1.2
VBE
(V)
Collector current as a function of
collector-emitter voltage; typical values
006aac123
1.2
VBEsat
(V)
(1)
(1)
0.8
0.8
(2)
(2)
(3)
(3)
0.4
0.4
0.0
10−1
1
10
102
0.0
10−1
103
104
IC (mA)
1
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 8.
Base-emitter voltage as a function of collector
current; typical values
PBSS4620PA
Product data sheet
Fig 9.
10
102
103
104
IC (mA)
Base-emitter saturation voltage as a function
of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
7 of 15
PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
006aac124
1
VCEsat
(V)
006aac125
1
VCEsat
(V)
(1)
10−1
10−1
(2)
(1)
(3)
10−2
10−2
(2)
(3)
10−3
10−1
1
10
102
103
104
IC (mA)
10−3
10−1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac126
102
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac127
103
RCEsat
(Ω)
RCEsat
(Ω)
102
10
10
(1)
1
1
(1)
(2)
10−1
(2)
10−1
(3)
(3)
10−2
10−1
1
10
102
103
104
IC (mA)
10−2
10−1
1
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
Product data sheet
102
103
104
IC (mA)
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
PBSS4620PA
10
Fig 13. Collector-emitter saturation resistance as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
8. Test information
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig 14. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mlb826
VCC = 9 V; IC = 2 A; IBon = 0.1 A; IBoff = −0.1 A
Fig 15. Test circuit for switching times
PBSS4620PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
9. Package outline
1.3
0.65
max
0.35
0.25
1
1.05
0.95
2
0.45
0.35
1.1
0.9
0.3
0.2
2.1
1.9
3
1.6
1.4
Dimensions in mm
2.1
1.9
09-11-12
Fig 16. Package outline SOT1061 (HUSON3)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
PBSS4620PA
[1]
PBSS4620PA
Product data sheet
SOT1061
4 mm pitch, 8 mm tape and reel
-115
For further information and the availability of packing methods, see Section 14.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
10 of 15
PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
11. Soldering
2.1
1.3
0.5 (2×)
0.4 (2×)
0.5 (2×)
0.6 (2×)
1.05
2.3
0.6
0.55
0.25
1.1
0.25
1.2
0.25
0.4
0.5
1.6
1.7
Dimensions in mm
solder paste = solder lands
solder resist
occupied area
sot1061_fr
Reflow soldering is the only recommended soldering method.
Fig 17. Reflow soldering footprint SOT1061 (HUSON3)
PBSS4620PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS4620PA v.1
20100518
Product data sheet
-
-
PBSS4620PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
12 of 15
PBSS4620PA
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20 V, 6 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
PBSS4620PA
Product data sheet
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Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
13 of 15
PBSS4620PA
NXP Semiconductors
20 V, 6 A NPN low VCEsat (BISS) transistor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSS4620PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 May 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4620PA
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20 V, 6 A NPN low VCEsat (BISS) transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 18 May 2010
Document identifier: PBSS4620PA
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