tm2541b-l ds en

TO-3PF 25A Triac
TM2541B-L, TM2561B-L
■ Features
External Dimensions
●Isolation voltage: VISO=2000V(AC, 1min.)
3.35± 0.2
1.6
3.3
a
b
(16.2)
)
23± 0.3
5.5± 0.2
9.5± 0.2
●RMS on-state current: IT(RMS)=25A
●Gate trigger current: IGT=30mA max (MODE , ,
5.5± 0.2
3.45± 0.2
3.2± 0.2
(Unit: mm)
●Repetitive peak off-state voltage: VDRM=400, 600V
+0.2
1.75–0.1
+0.2
2.15 –0.1
●UL approved type available
+0.2
1.05–0.1
5.45± 0.1
5.45± 0.1
+0.2
0.65–0.1
15.6± 0.2
1.5 4.4 1.5
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
a. Part Number
b. Lot Number
Weight: Approx. 6.5g
(1) (2) (3)
■Absolute Maximum Ratings
Parameter
Symbol
Ratings
TM2541B-L
TM2561B-L
Unit
Conditions
Repetitive peak off-state voltage
VDRM
V
RGK= ∞, Tj= –40°C to +125°C
RMS on-state current
IT(RMS)
25
A
Conduction angle 360°, Tc=84°C
Surge on-state current
ITSM
240
A
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate voltage
VGM
10
V
f
50Hz, duty
10%
Peak gate current
IGM
2
A
f
50Hz, duty
10%
Peak gate power loss
PGM
5
W
f
50Hz, duty
10%
PG(AV)
0.5
W
Average gate power loss
400
600
Junction temperature
Tj
– 40 to +125
°C
Storage temperature
Tstg
– 40 to +125
°C
Isolation voltage
VISO
2000
Vrms
50Hz Sine wave, RMS, Terminal to Case, 1 min.
■Electrical Characteristics
Parameter
Symbol
Off-state current
IDRM
On-state voltage
VTM
Ratings
min
typ
max
0.3
2.0
Conditions
mA
VD=VDRM, RGK= ∞, Tj=25°C
0.1
1.3
0.8
Gate trigger voltage
Unit
VGT
V
VD=VDRM, RGK= ∞, Tj=125°C
ITM=20A, TC=25°C
0.8
2.0
0.8
2.0
V
VD=6V, RL=10Ω, TC=25°C
Gate trigger current
19
IGT
22
Holding current
Rate-of-rise of off-state commutation voltage
Thermal resistance
50
VGD
30
30
(dv/dt)c
Rth
–
–
–
+
+
+
T2 , G
mA
VD=6V, RL=10Ω, TC=25°C
+
–
–
–
–
+
T2 , G
T2 , G
T2 , G
V
0.2
mA
40
IH
–
T2 , G
T2 , G
30
50
Gate non-trigger voltage
+
+
T2 , G
1.0
17
+
T2 , G
2.0
10
1.5
VD=1/2×VDRM, Tj=125°C
Tj=25°C
V/µs
VD=400V, Tj=125°C
°C/W
Junction to case
TM2541B-L, TM2561B-L
50
240
Surge on-state current ITSM (A)
280
iT (A)
Tj =125°C
Tj =25°C
10
5
1
0.8 1.0 1.2 1.4
IT(RMS) – PT(AV) Characteristics
Initial junction temperature
Tj=125°C
ITSM
10 ms
1cycle
200
160
120
80
40
1.6 1.8 2.0 2.2 2.4
5
10
50
VGM =10V
10
PGM =0.5W
25°C VGT=2V
1
25
VGD=0.2V
0.1
0
20
24 26
1
10
RMS on-state current IT(RMS) (A)
Gate trigger current IGT (mA)
Mode
50
10
5
100
Junction temperature Tj (°C)
125
4
8
12
16
20
24 26
(VD =6V RL =10 Ω)
1000
10000
iGF (mA)
1.0
0.8
0.6
0.4
0.2
–40
0
25
50
75
100
125
Junction temperature Tj (°C)
rth( j-c) – t Characteristics
Transient thermal resistance rth (j-c) (°C/W)
(VD =6V RL =10 Ω)
75
100
Gate current
IGT temperature characteristics
50
PG(AV) =0.5W
–40°C VGT=2.3V
IGM =2A
50
25
0
1.2
25°C IGT=30mA
75
0
4
(Typical)
–40°C IGT=75mA
vGF (V)
Gate voltage
Case temperature TC (°C)
100
1
–40
8
Mode
125
100
12
VGT temperature characteristics
100
(Typical)
16
RMS on-state current IT(RMS) (A)
Full-cycle sinewave
Conduction angle :360°
16
20
100
Gate Characteristics
12
24
Number of cycle
150
8
28 Conduction angle :360°
0
1
vT ( V )
IT(RMS) – Tc Ratings
4
Full-cycle sinewave
0
On-state voltage
0
32
Gate trigger voltage VGT (V)
On-state current
ITSM Ratings
100
Average on-state power PT(AV) (W)
vT – iT Characteristics (max)
5
1
0.5
0.1
1
10
102
103
104
105
t, Time (ms)
51