Datasheet

InGaAs linear image sensors
G11620 series
(cooled type)
Single video line (256/512 pixels)
near infrared image sensor (0.95 to 1.67 μm)
The G11620 series is an InGaAs linear image sensor designed for near infrared multichannel spectrophotometry. The CMOS
chip consists of charge amplifiers, a shift register, and a timing generator. Previous products had two CMOS chips, but a single
chip configuration was achieved on this product through the use of bump connection. This structure has reduced the video
output difference between odd pixels and even pixels. Charge amplifiers are configured with CMOS transistor array and are
connected to each pixel of the InGaAs photodiode array. Since the signal from each pixel is read in charge integration mode,
high sensitivity and stable operation are attained in a wide spectral response range. The package is hermetically sealed providing excellent reliability.
The signal processing circuit on the CMOS chip enables the selection of an optimum conversion efficiency (CE) for your application
from the available two types using external voltage.
Features
Applications
Low noise, low dark current
Near infrared multichannel spectrophotometry
Selectable from two conversion efficiency types
Radiation thermometers
Built-in saturation countermeasure circuit
Non-destructive inspection equipment
Built-in CDS circuit*1
Built-in thermistor
Easy operation (built-in timing generator*2)
High resolution: 25 μm pitch (G11620-512SA)
*1: A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. However, the
CDS circuit, which takes the difference between the signal after the completion of the integration time and the signal immediately
after resetting, greatly reduces the reset noise.
*2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external
PLDs (programmable logic device) are used to input the required timing signals. However, the image sensors internally generate all
timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings.
Selection guide
Type no.
G11620-256SA
G11620-512SA
Cooling
Image size
(mm)
Number of total pixels
One-stage TE-cooled
12.8 × 0.5
256
512
Number of effective
pixels
256
512
Dedicated driver
circuit
-
Structure
G11620-256SA
Pixel size
[μm (H) × μm (V)]
50 × 500
Pixel pitch
(μm)
50
G11620-512SA
25 × 500
25
Parameter
Package
Window material
28-pin metal
(refer to dimensional
outline)
Sapphire
(with anti-reflective coating)
www.hamamatsu.com
1
InGaAs linear image sensors
G11620 series (cooled type)
V
Enlarged view of photosensitive area (unit: μm)
x
H
Type no.
x
H
V
G11620-256SA
30
50
500
G11620-512SA
10
25
500
KMIRC0088EA
Block diagram (G11620-512SA)
CMOS chip
Shift
register
.....
CLK
RESET
Charge
amplifier
Timing generator
.....
Shift
register
AD_sp
.....
InGaAs
chip
.....
VIDEO
CMOS readout circuit
.....
AD_trig
KMIRC0048EA
2
InGaAs linear image sensors
G11620 series (cooled type)
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Reset pulse voltage
Gain selection terminal voltage
Operating temperature
Storage temperature
Soldering conditions
Thermistor power dissipation
Symbol
Vdd, INP, Fvref
Vinp, PDN
Vϕ
V(RES)
Vcfsel
Topr
Tstg
Pd_th
Condition
Min.
Typ.
Max.
Unit
Ta=25 °C
-0.3
-
+6
V
Ta=25 °C
Ta=25 °C
Ta=25 °C
No dew condensation*3
No dew condensation*3
-0.3
-0.3
-0.3
-10
-20
Up to 260 °C, up to 10 s
-
+6
+6
+6
+60
+70
V
V
V
°C
°C
mW
Ta=25 °C
-
400
*3: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.
Recommended terminal voltage (Ta=25 °C)
Parameter
Supply voltage
Differential reference voltage
Video line reset voltage
Input stage amplifier reference voltage
Photodiode cathode voltage
Ground
High
Clock pulse voltage
Low
High
Reset pulse voltage
Low
Symbol
Vdd
Fvref
Vinp
INP
PDN
Vss
Vϕ
V(RES)
Min.
4.7
1.1
3.9
3.9
3.9
4.7
0
4.7
0
Typ.
5.0
1.2
4.0
4.0
4.0
0
5.0
0
5.0
0
Max.
5.3
1.3
4.1
4.1
4.1
5.3
0.4
5.3
0.3
Unit
V
V
V
V
V
V
V
V
Electrical characteristics (Ta=25 °C)
Parameter
Current consumption
Clock frequency
Video data rate
Video output voltage
High
Low
Output offset voltage
Output impedance
High
AD_trig, AD_sp
pulse voltage
Low
Thermistor resistance
Thermistor B constant*4
Symbol
G11620-256SA
I(Vdd)
G11620-512SA
Ifvref
Ivinp
Iinp
Ipdn
f
DR
VH
VL
Vos
Zo
Vtrig, Vsp
Rth
B
Min.
0.1
0.1
9.0
-
Typ.
55
80
1
f
4.0
1.2
Fvref
5
Vdd
GND
10.0
3950
Max.
80
100
1
1
1
1
5
5
11.0
-
Unit
mA
MHz
MHz
V
V
kΩ
V
kΩ
K
*4: T1=25 °C, T2=50 °C
3
InGaAs linear image sensors
G11620 series (cooled type)
Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Photoresponse nonuniformity*6
PRNU
Saturation charge
Qsat
Saturation output voltage
Dark output
Dark current
Temperature coefficient of dark
output (dark current)
Vsat
VD
ID
CE=16 nV/eCE=16 nV/e-
Min.
1.45
0.7
168
16.8
2.7
-
-
CE=16 nV/e-
-
1.1
-
times/°C
CE=16 nV/eCE=160 nV/eCE=16 nV/eCE=16 nV/e-
6750
-
200
300
14000
-
400
500
μV rms
Conversion
Symbol
λ
λp
S
efficiency*5
λ=λp
Cf=10 pF
Cf=1 pF
CE
Readout noise*7
N
Dynamic range
Defective pixels*8
D
-
*5:
*6:
*7:
*8:
Condition
CE=16 nV/eCE=160 nV/e-
Max.
1.65
±10
±0.5
±5
Unit
μm
μm
A/W
nV/e%
MeV
V/s
pA
%
-
1
For switching the conversion efficiency, see the pin connections.
Measured at 50% saturation and 10 ms integration time after subtracting the dark output, excluding the first and last pixels
Integration time when CE=16 nV/e- is 10 ms. Integration time when CE=160 nV/e- is 1 ms.
Pixels whose photoresponse nonuniformity, readout noise, or dark current is outside the specifications
Spectral response (typical example)
Spectral transmittance of window material (typical example)
(Typ.)
1.0
95
Transmittance (%)
0.6
Td=25 °C
0.4
Td=-10 °C
0.2
0
0.8
(Ta=25 °C)
100
0.8
Photosensitivity (A/W)
Typ.
0.95 to 1.7
1.55
0.82
16
160
±5
175
17.5
2.8
±0.05
±0.5
90
85
80
75
1.0
1.2
1.4
1.6
1.8
70
0.5
1.0
1.5
2.0
2.5
3.0
Wavelength (μm)
Wavelength (μm)
KMIRB0092EA
KMIRB0070EA
4
InGaAs linear image sensors
G11620 series (cooled type)
Linearity error
20
(Td=25 ˚C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, f=1 MHz, CE=16 nV/eˉ)
15
Linearity error (%)
10
5
0
-5
-10
-15
-20
1
10
100
1000
10000
Output voltage (mV)
KMIRB0091EA
Equivalent circuit
G11620-256SA
PDN
Cf_select
S/H
VIDEO
INP
Fvref
Photodiode array
Charge amplifier array
CMOS readout circuit
KMIRC0049EA
5
InGaAs linear image sensors
G11620 series (cooled type)
G11620-512SA
Cf_select
PDN
S/H
VIDEO
Odd
pixels
Even
pixels
INP
Fvref
Odd pixels
Cf_select
S/H
INP
Even pixels
Photodiode array
Charge amplifier array
CMOS readout circuit
KMIRC0054EA
6
InGaAs linear image sensors
G11620 series (cooled type)
Timing chart
CLK
RESET
Integration time (setting)
5 CLK
Blank
Integration time (actual)
5 CLK
AD_sp
AD_trig
n × CLK
VIDEO
1
tf(clk)
CLK
2
n-1 n
tr(clk)
Note:
n=number of channels
tpw(clk)
tr(res)
tf(res)
RESET
tpw(res)
KMIRC0055EB
Parameter
Clock pulse frequency
Clock pulse width
Clock pulse rise/fall times
High
Reset pulse width
Low
Reset pulse rise/fall times
Symbol
f
tpw(clk)
tr(clk), tf(clk)
tpw(res)
tr(res), tf(res)
Min.
0.1
60
0
6
Number of pixels + 28
0
Typ.
1
500
20
20
Max.
5
5000
30
30
Unit
MHz
ns
ns
clocks
ns
7
InGaAs linear image sensors
G11620 series (cooled type)
Connection example
Pulse
generator
CLK
AD_sp
RESET
AD_trig
Controller
Buffer amp
Buffer amp
Cf_select 1
ADC
Cf_select 2
INP
Supply
voltage
PDN
Vinp
Fvref
Vdd
GND
VIDEO
Buffer amp
KMIRC0056EB
8
InGaAs linear image sensors
G11620 series (cooled type)
Pin connections (top view)
Cf SELECT1
Cf SELECT2
RESET
TEAD_SP
AD_TRIG
Vdd
GND
INP
CLK
PDN
TE+
THERM
THERM
CASE
Vinp
Fvref
VIDEO
KMIRC0089EA
PDN
AD_sp
Input/
output
Input
Output
Cf_select1, 2
Input*9
Thermistor
AD_trig
Output
Output
RESET
Input
CLK
Input
INP
Input
Vinp
Input
Fvref
Input
VIDEO
Vdd
GND
CASE
Output
Input
Input
-
TE+, TE-
Input
Terminal name
Function and recommended connection
Remark
InGaAs photodiode’s cathode bias terminal. Set to the same potential as INP.
Digital start signal for A/D conversion
Signal for selecting the feedback capacitance (integration capacitance) on the
CMOS chip
Thermistor for monitoring the temperature inside the package
Sampling sync signal for A/D conversion
Reset pulse for initializing the feedback capacitance in the charge amplifier
formed on the CMOS chip. Integration time is determined by the high level period
of this pulse.
Clock pulse for operating the CMOS shift register
Input stage amplifier reference voltage. This is the supply voltage for operating
the signal processing circuit on the CMOS chip. Set to the same potential as
PDN.
Video line reset voltage. This is the supply voltage for operating the signal
processing circuit on the CMOS chip.
Differential amplifier reference voltage. This is the supply voltage for operating
the signal processing circuit on the CMOS chip.
Differential amplifier output. This is an analog video signal.
Supply voltage (+5 V) for operating the signal processing circuit on the CMOS chip
Ground (0 V) for the signal processing circuit on the CMOS chip
This terminal is connected to the package.
Power supply terminal for the thermoelectric cooler for cooling the photodiode
array
4.0 V
0 to 5 V
0 V or 5 V
0 to 5 V
0 to 5 V
0 to 5 V
4.0 V
4.0 V
1.2 V
1.2 to 4.0 V
5V
0V
-
*9: The conversion efficiency is determined by the supply voltage to the Cf_select terminal as follows.
Conversion efficiency
16 nV/e- (low gain)
160 nV/e- (high gain)
Cf_select1
High
High
Cf_select2
High
Low
Low: 0 V (GND), High: 5 V (Vdd)
9
InGaAs linear image sensors
G11620 series (cooled type)
Specifications of TE-cooler (Ta=25 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz)
Parameter
Allowable TE cooler current
Allowable TE cooler voltage
Temperature difference*10
Thermistor resistance
Thermistor power dissipation
Condition
Symbol
Ic max
Vc max
∆T
Rth
Pth
Ic=1.7 A
Min.
40
9
-
Typ.
10
-
Max.
1.8
5.0
11
400
Unit
A
V
°C
kΩ
mW
*10: Temperature difference between the photosensitive area and package heat dissipation area
TE-cooler temperature characteristics (Ta=25 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz)
(Typ. heatsink 0.5 °C/W)
Voltage
Temperature difference
Voltage (V)
3.5
70
60
3.0
50
2.5
40
2.0
30
1.5
20
1.0
10
0.5
0
Temperature difference (°C)
4.0
-10
0
0
1
2
Current (A)
KMIRB0031EC
Thermistor temperature characteristics
(Typ.)
1000
Thermistor resistance (kΩ)
Temperature
(°C)
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
100
10
1
-40 -30 -20 -10
0
10
20
30
40
50
60
Thermistor
resistance
(kΩ)
281
208
155
117
88.8
68.4
53.0
41.2
32.1
25.1
19.8
15.7
Temperature
(°C)
20
25
30
35
40
45
50
55
60
65
70
Thermistor
resistance
(kΩ)
12.5
10.0
8.06
6.53
5.32
4.36
3.59
2.97
2.47
2.07
1.74
70
Temperature (°C)
KMIRB0061EA
10
InGaAs linear image sensors
G11620 series (cooled type)
Dimensional outline (unit: mm)
63.5 ± 0.15
53.3 ± 0.15
38.1 ± 0.15
2.54 ± 0.15
35.6 ± 0.15
R 1.59
27.2 ± 0.15
15
1
6.4 ± 1
1.0 ± 0.2
3.8 ± 0.3
5.8 ± 0.2
Index mark
6.15 ± 0.2
Photosensitive
surface
20.3 ± 0.15
3.0 ± 0.15
10.2 ± 0.15
22.9 ± 0.15
25.4 ± 0.15
28
2.54 ± 0.15
0.45 ± 0.05
14
Photosensitive area left side: 1 ch
Position accuracy of photosensitive area center:
±0.3 (with respect to package center)
Rotation accuracy of photosensitive area:
±2° (with respect to package center)
Package material: FeNi alloy
Lead processing: Ni/Au plating
Lead material: FeNiCo alloy
Window refractive index of window material: n=1.76
Window material thickness: 0.66
AR coat: coated (1.55 μm peak)
Window sealing method: brazing
Cap sealing: welding
KMIRA0031EA
Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Safety consideration
∙ Image sensors
Information described in this material is current as of October, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
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China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMIR1026E01 Oct. 2015 DN
11
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