SANKEN ELECTRIC CO.,LTD Selection Guide Diode The all contents in this document are as of date of publication. Make sure that this is the latest revision of the document before use. Please check the details of the product by data sheet. http://www.sanken-ele.co.jp/en DITOUSE-SGE Nov.09,2015 P.1 Diodes by Circuit Types Diodes are used in peripheral circuit of power supply. A part of diode lineup is shown below. Please refer to Sanken’s catalog or website for more information. Power Supply Application Non-isolated Buck/Buck-boost Circuit Low power application For motor control Auxiliary power supply LED lighting, etc. Diode Application AC/DC Convertor VAC VOUT AC/DC Convertor Snubber Diode (SARS) P.6 Secondary Rectification Diode ・SBD : VRM = 40 V ~ 150V ・FRD : VRM = 200 V ~ 600 V P.8 Bootstrap Diode (FRD) P.14 For PFC ・Bypass Diode (Acceptable large current ) ・Rectification Diode (FRD) P.15 Secondary Rectification Diode VAC VOUT AC/DC Convertor Snubber Diode LLC Circuit Bootstrap Diode AC/DC Convertor Secondary Rectification Diode REG High power application OA , AV Industrial equipment LED street light, etc. VOUT VS GND GND Power Factor Correction (PFC) Nov.09,2015 P.3 VOUT Low to middle power application Adapter Auxiliary power supply LED lighting, etc. DITOUSE-SGE Freewheel Diode (FRD) VAC Fly-back Circuit Application for 75W or more Industrial equipment LED lighting, etc. page Bypass Diode Rectification Diode VAC VPFCOUT PFC Control IC P.2 Freewheel Diode For Non-Isolated Buck and Buck-boost Circuit Since buck and buck boost offline converter IC operates by high frequency, the recovery characteristic of freewheel diode should be fast. In order to increase the efficiency of circuit, the VF of the diode should be as low as possible. The fast recovery diode with low VF for freewheeling is as follows; Buck circuit Buck-boost circuit AC/DC Convertor AC/DC Convertor VAC VAC VOUT VOUT Freewheel Diode Package IF VRM Features Link SMD Type (SJP) 1 A to 3 A 200 V to 600 V Fast recovery trr ≤ 50 ns P.4 Through-hole Type (Axial, TO220) 1 A to 10 A 500 V to 600 V Fast recovery trr ≤ 50 ns P.5 DITOUSE-SGE Nov.09,2015 P.3 Freewheel Diode For Non-Isolated Buck and Buck-boost Circuit Fast Recovery Diode (SMD Type) Package Fast Recovery, trr ≤ 50 ns SJP VRM = 200 V to 600 V IF = 1 A to 3 A VRM 200 V X/Y/Z = 4.5 : 2.6 : 2.15 Unit : mm IF (AVG) Products VF (max.) IF IF:IR=1:1 25 A 0.98 V 1.0 A 50 ns 25 A 0.98 V 2.0 A 50 ns SJPL-D2 2.0 A SJPL-H2 3.0 A SJPL-L2 60 A 0.98 V 3.0 A 50 ns 1.5 A SJPL-F4 25 A 1.3 V 1.5 A 50 ns 3.0 A SJPL-L4 30 A 1.3 V 3.0 A 50 ns 1.0 A SJPD-D5 20 A 1.4 V 1.0 A 40 ns 50 A 1.4 V 3.0 A 50 ns 30 A 1.5 V 2.0 A 50 ns SJP SJP 500 V DITOUSE-SGE trr 1.0 A 400 V 600 V Package VF IFSM 50Hz Half wave SJP 3.0 A SJPD-L5 2.0 A SJPL-H6 Nov.09,2015 SJP P.4 Freewheel Diode For Non-Isolated Buck and Buck-boost Circuit Fast Recovery Diode (Through-hole Type) Fast Recovery, trr ≤ 50 ns Package φ2.4 φ2.7 φ4.0 φ6.5 TO220F-2L Axial TO220F-3L (Center tap) VRM = 200 V to 600 V IF = 1 A to 10 A VRM 200 V 400 V IF (AVG) 1.0 A 2.0 A 3.5 A 1.0 A 1.5 A 2.0 A 5.0 A 10 A 600 V 1.2 A 3.0 A 5.0 A 10 A DITOUSE-SGE Products AL01Z RL10Z RL4Z AL01 EL1 RL2 FML-G14S FML-24S FMXA-1104S RD2A RL4A FML-S16S FMD-G26S FMXA-1106S Nov.09,2015 Package IFSM 50Hz Half wave Axial (φ2.4) Axial (φ4.0) Axial (φ6.5) Axial(φ2.4) Axial(φ2.7) Axial (φ4.0) TO-220F-2L TO-220F-3L TO-220F-2L Axial (φ4.0) Axial (φ6.5) TO-220F-2L 25 A 30 A 80 A 20 A 40 A 40 A 70 A 70 A 100 A 30 A 80 A 50 A TO-220F-2L 100 A VF trr VF (max.) IF IF：IR=1:1 0.98 V 0.98 V 0.95 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.5 V 1.55 V 1.5 V 1.7 V 1.7 V 1.98 V 1.0 A 2.0 A 3.5 A 1.0 A 1.5 A 2.0 A 5.0 A 5.0 A 10 A 1.2 A 3.0 A 5.0 A 10 A 10 A 50 ns 50 ns 50 ns 50 ns 50 ns 50 ns 50 ns 50 ns 25 ns 50 ns 50 ns 50 ns 50 ns 28 ns P.5 SARS Diode for Snubber Circuit Using FLR Diode Using SARS Snubber Snubber VAC VAC Discharge Loop SARS Discharge Loop Surge Absorb Loop Surge Absorb Loop Power Supply Control IC Power Supply Control IC Controller Controller VDS When MOSFET turns off, surge current flows on “Surge Absorb Loop” and It is absorbed by capacitor. The electrical charge of capacitor is discharged through ”Discharge Loop”. The power is not transferred to the secondary side. Thus it becomes power dissipation. When this capacitor is discharged, the recovery current of the diode flows on the MOSFET. FLR (Fast Recovery Diode) is beneficial for preventing the MOSFET damage. DITOUSE-SGE Nov.09,2015 VDS When SARS is used, the electrical charge of the capacitor is discharged through ”Discharge Loop” in recovery period of SARS and this power is transferred to the secondary side. Thus high circuit efficiency can be achieved. When this capacitor is discharged, the instantaneous recovery current of the diode flows on the MOSFET. It is recommended to add a resistor in series with SARS for the damage control of MOSFET. (Patented circuit) P.6 Low Noise, Improve Circuit Efficiency SARS, Diode for Snubber Circuit Package SJP TO-220F-2L X/Y/Z = 4.5 : 2.6 : 2.15 Unit : mm Axial - φ2.7 mm / φ0.60 mm Low noise; Prevention of ringing at Power MOSFET turn-off PCB area saving; Reducing number of filter circuit components Axial - φ4.0 mm / φ0.78 mm Improve circuit efficiency VF IF (AVG) IFSM 50Hz Half-wave VF (max.) 800 V 1.2 A 110 A SARS02 800 V 1.5 A SARS05 800 V Built-in resistance(22Ω) SARS10 800 V DITOUSE-SGE Nov.09,2015 Type External resistance Part Number VRM SARS01 IF trr IF：IR=1：1 Package 0.92 V 1.2 A 2 to 18 μs Axial - φ2.7 / φ0.60 100 A 0.92 V 1.5 A 2 to 18 μs Axial - φ4.0 / φ0.78 1.0 A 30 A 1.05 V 1.0 A 2 to 18 μs SJP (SMA:4.5 x 2.6) 0.3 A 1.5 A 13 V 0.5 A 1 to 9 μs TO220F-2L P.7 Diode for Secondary Rectification The forward current for charging Secondary Electrical capacitor and the recovery current flow to the secondary rectification diode. In order to improve the efficiency of circuit, the diode should be as low VF and fast recovery as possible. Half bridge Type Flyback Type DC input VAC Secondary Rectification Diode VOUT VB REG Secondary Rectification Diode LLC control IC AC/DC convertor IC VOUT VS Cont. GND GND VRM Diode IF(AVG) VF trr Link 40 V, 60 V Schottky 10 A to 30 A ≤ 0.7 V － P.9 80 V, 100V, 150 V Schottky 10 A to 30 A ≤ 0.92 V － P.10 200 V, 300 V Fast Recovery 10 A to 20 A ≤ 1.3 V 17 ns to 40 ns P.11 400 V, 600 V Fast Recovery 10 A to 20 A ≤ 1.98 V 25 ns to 50 ns P.12 650 V SiC 10 A to 20 A ≤ 1.75 V － P.13 DITOUSE-SGE Nov.09,2015 P.8 Secondary-side Rectification Diode Schottky Diode, VRM ≥ 40 V TO-220F-3L Low VF ≤ 0.7 V TO-3PF-3L VRM = 40 V ~ 60 V VRM IF (AVG) Package 5Ax2 40 V 7.5 A x 2 TO-220F-3L 10 A x 2 15 A x 2 TO-3PF-3L 5Ax2 60 V 7.5 A x 2 10 A x 2 15 A x 2 DITOUSE-SGE TO-220F-3L Nov.09,2015 TO-3PF-3L VF Part Number IFSM 50Hz Half wave VF (max.) IF FMW-24L 100 A 0.55 V 5A FMW-24H 120 A 0.55 V 7.5 A FMW-2204 150 A 0.55 V 10 A FMW-4304 150 A 0.55 V 15 A FMW-2106 100 A 0.70 V 5A FMW-2156 100 A 0.70 V 7.5 A FMW-2206 120 A 0.70 V 10 A FMW-4306 150 A 0.70 V 15 A P.9 Secondary-side Rectification Diode Schottky Diode, VRM ≥ 80 V TO-220F-3L TO-3PF-3L Low VF ≤ 0.92 V VRM = 80 V ~ 150 V VRM 80 V 100 V Part Number VF (max.) IF FMEN-2208 120 A 0.76 V 10 A FMEN-2308 150 A 0.765 V 15 A 5Ax2 FMEN-210A 100 A 0.85 V 5.0 A 7.5 A x 2 FMEN-215A 100 A 0.85 V 7.5 A FMEN-220A 120 A 0.85 V 10 A FMEN-230A 150 A 0.85 V 15 A FMEN-430A 150 A 0.85 V 15 A FMEN-210B 100 A 0.92 V 5.0 A FMEN-220B 120 A 0.92 V 10 A IF (AVG) 10 A x 2 15 A x 2 10 A x 2 Package TO-220F-3L TO-220F-3L 15 A x 2 15 A x 2 150 V DITOUSE-SGE VF IFSM 50Hz Half wave 5Ax2 10 A x 2 Nov.09,2015 TO-3PF-3L TO-220F-3L P.10 Secondary-side Rectification Diode Fast Recovery Diode, trr ≤ 40 ns VRM ≥ 200 V Fast Recovery , trr = 17 ns ~ 40 ns Low VF ≤ 1.3 V VRM = 200 V ~ 300 V VRM TO-220F-2L IF (AVG) Package 10 A TO-220F-2L 5Ax2 200 V 5Ax2 7.5 A x 2 TO-220F-3L 10 A x 2 10 A x 2 TO-3PF-3L 5Ax2 300 V 7.5 A x 2 TO-220F-3L 10 A x 2 10 A x 2 DITOUSE-SGE TO-3PF-3L Nov.09,2015 TO-220F-3L TO-3PF-3L Part Number IFSM 50Hz Half wave VF VF (max.) IF trr IF：IR=1：1 FMX-G22S 150 A 0.98 V 10 A 30 ns FML-G22S 150 A 0.98 V 10 A 40 ns FMX-12SL 65 A 1.25 V 5A 30 ns FMXA-2102ST 100 A 1.20 V 5A 25 ns FMX-22SL 100 A 0.98 V 7.5 A 30 ns FMXA-2202S 100 A 1.20 V 10 A 25 ns FMXS-4202S 150 A 1.05 V 10 A 30 ns FMX-23S 65 A 1.30 V 5A 30 ns FMXA-2153S 75 A 1.28 V 7.5 A 17 ns FMXA-2203S 100 A 1.30 V 10 A 25 ns FMXA-4203S 100 A 1.30 V 10 A 25 ns P.11 Secondary-side Rectification Diode Fast Recovery Diode, trr ≤ 50 ns VRM ≥ 400 V Fast Recovery , trr = 25 ns ~ 50 ns Low VF ≤ 1.98 V VRM = 400 V ~ 600 V TO-220F-3L TO-3PF-3L IF (AVG) Package Part Number IFSM 50Hz Half wave 10 A TO-220F-2L FMXA-1104S 100 A 1.50 V 10 A 25 ns 10 A x 2 TO-220F-3L FML-24S 70 A 1.30 V 5A 50 ns FMD-G26S 100 A 1.7 V 10 A 50 ns FMX-1106S 50 A 1.6 V 10 A 30 ns FMXA-1106S 100 A 1.98 V 10 A 28 ns FMXK-1106S 100 A 1.75 V 10 A 27 ns FMXS-1206S 180 A 1.6V 20A 35ns FMXS-2206S 100 A 1.6 V 10 A 30 ns FMXK-2206S 100 A 1.75 V 10 A 27 ns FMD-4206S 100 A 1.7 V 10 A 50 ns VRM 400 V TO-220F-2L 10 A 600 V TO-220F-2L 20A 10 A x 2 TO-220F-3L 10 A x 2 TO-3PF-3L DITOUSE-SGE Nov.09,2015 VF VF (max.) IF trr IF：IR=1：1 P.12 Secondary-side Rectification Diode SiC Diode, VRM = 650 V High voltage Schottky Diode Low VF ≤ 1.75 V VRM = 650 V TO-220F-3L IF (AVG) Package Part Number IFSM 50Hz Half wave 10 A TO-220F-2L FMCA-11065 40 A 1.75 V 10 A － 10 A x 2 TO-220F-3L FMCA-22065 40 A 1.75 V 10 A － VRM 650 V TO-220F-2L DITOUSE-SGE Nov.09,2015 VF VF (max.) IF trr IF：IR=1：1 P.13 Bootstrap Diode Bootstrap Diode is used for high-side driver of power supply circuit. Since the recovery current flows on the diode depending on the switching frequency of the driver, it is recommended to use a diode with fast recovery characteristic. For the bootstrap diode selection, the applied voltage of Power MOSFET and the high-side sink current need to be considered. DC input Bootstrap Diode SJP X/Y/Z = 4.5 : 2.6 : 2.15 VB REG LLC control IC Axial Φ2.4 /φ0.6 Axial Φ4.0 /φ0.78 Axial Φ2.7 /φ0.78 Axial Φ4.0 /φ0.98 X VOUT VS Y GND Z Unit : mm VRM 600 V 800 V DITOUSE-SGE パッケージ Part Number IFSM 50Hz Half wave VF (max.) (IF=IF (AV)) trr IF：IR=1：1 2.0 A SJP SJPL-H6 30 A 1.5 V 50 ns 2.0 A SJP SJPX-H6 20 A 1.5 V 30 ns 0.5 A Axial φ2.4/φ0.6 AG01A 15 A 1.8 V 100 ns 0.6 A Axial φ2.7/φ0.78 EG1A 10 A 2.0 V 100 ns 1.0 A Axial φ4.0/φ0.78 RG10A 50 A 2.0 V 100 ns 1.2 A Axial φ4.0/φ0.98 RD2A 30 A 1.55 V 50 ns 0.5 A Axial φ2.4/φ0.6 AB01B 10 A 2.0 V 200 ns IF (AV) Nov.09,2015 P.14 Diode for PFC PFC circuit consists of a Bypass Diode and a Rectification Diode. Each diode needs to be selected according to their use. Bypass Diode VAC Points of selection for Bypass Diode→P.16 Rectification Diode Points of selection for Rectification Diode →P.17 VPFCOUT PFC Control IC GND Operation Mode Bypass Diode Features Link High Power, IFSM > 50A Low VF ≤ 0.95V P.18 DCM CRM Low VF ≤ 1.3V P.19 CCM • Fast recovery diode, trr ≤ 50ns • SiC Diode P.20 ― Rectification Diode DITOUSE-SGE Nov.09,2015 P.15 Points of Selection for Bypass Diode 1. Functions of Bypass Diode For Protecting MOSFET and Rectification Diode from Inrush Current When the inductance is saturated by the inrush current, large current flows to the rectification diode, the diode has a risk of breakdown. Since saturation of inductance is prevented by flowing inrush current to the bypass diode, MOSFET and rectification diode are protected. Bypass Diode VPFCOUT VAC Rectification Diode PFC Control IC GND For protecting Bridge Diode from Lightning Surge If the lightning surge is injected to the circuit, bridge diode has a risk of breakdown. Thus, the bypass diode changes the energy of the lightning surge flow and it is absorbed by electrolytic capacitor. 2. Electrical Characteristics of Bypass Diode In order to change flow of the inrush current and the lightning surge to the bypass diode, VF of Bypass diode needs to be lower than VF of rectification diode. When output voltage becomes higher than input voltage, the bypass diode turns off. Thus recovery characteristic of the diode is not considered. The pulse current and VF characteristic needs to be considered for the diode selection. Key points of Bypass Diode selection; 1) Acceptable large current in short period (IFSM > 50A) 2) Low VF than rectification diode (VF ≤ 0.95V) DITOUSE-SGE Nov.09,2015 P.16 Point of Selection for Rectification Diode The Rectification Diode of PFC should be selected according to the operation mode of PFC Discontinuous Conduction Mode (DCM) Features There is a period when the current that runs through L becomes zero (Frequency is fixed) L value: Small IL Advantages Critical Conduction Mode (CRM) Continuous Conduction Mode (CCM) The current that runs through L becomes zero for an instant (ON time is fixed) The current that runs through L does not become zero (Frequency is fixed) L value: Medium L value: Large IL MOSFET turns ON when the current that runs through a diode becomes zero ・There is almost no recovery current in the rectifier diode ・Switching noise is small IL Peak current of MOSFET is small Ripple of input current is small Normal mode noise is small With almost no recovery current, better efficiency is achieved when focusing on VF Peak current of MOSFET is large Disadvantages Ripple of input current is large Normal mode noise is large Key points in selecting a rectifier diode ; ・DCM, CRM: Low VF Diode (VF ≤ 1.3V) ・CCM: Fast Recovery Diode (trr ≤ 50 ns) with Low VF DITOUSE-SGE Nov.09,2015 MOSFET turns ON when the current runs through the diode ・Recovery current runs through the rectifier diode, resulting in large loss ・Switching noise is large To reduce loss, use a diode with excellent reverse recovery time (trr) P.17 Bypass Diode for PFC VF ≤ 0.95 V, VRM = 600 V Axial-φ2.7mm/φ0.78mm φ6.5mm/φ1.4mm φ4.0mm/φ0.78mm Low VF = 0.95 V(max.) VRM = 600 V VRM 600 V VF (max.) IF IR/H.IR (VR=VRM) VF IF (AVG) Package 1.0 A Axial φ2.7 EM2A 80 A 0.92 V 1.2 A 10 μA / 50 μA 1.2 A Axial φ4.0 RM 11A 100 A 0.92 V 1.5 A 10 μA / 50 μA 1.2 A Axial φ4.0 RM 10A 150 A 0.91 V 1.5 A 10 μA / 50 μA 1.7 A Axial φ6.5 RM 4A 200 A 0.95 V 3.0 A 10 μA / 50 μA 1.8 A Axial φ6.5 RM 4AM 350 A 0.92 V 3.5 A 10 μA / 50 μA DITOUSE-SGE Nov.09,2015 Part Number IFSM 10ms Half wave P.18 Rectification Diode for DCM and CRM PFC VF ≤ 1.3 V, VRM = 600 V For DCM and CRM Low VF = 1.30 V(max.) VRM = 600 V trr ≤ 200 ns VRM IF (AVG) 3.0 A 600 V Package Axial φ6.5 TO-220F-2L TO-220F-3L Part Number TO-3PF-2L VF VF (max.) IF TO-3PF-3L TO-3P-3L TO-247-3L IFSM 50Hz Half wave trr IF：IR=1：1 Axial (φ6.5/φ1.4) RY2A 1.15 V 3.0 A 50 A 200 ns Axial (φ6.5/φ1.4) RN4A 1.30 V 3.0 A 50 A 100 ns 5.0 A TO-220F-2L FMN-1056S 1.30 V 5.0 A 60 A 100 ns 10 A TO-220F-2L FMNS-1106S 1.30 V 10 A 100 A 100 ns 15 A TO-220F-2L FMN-1156S 1.30 V 15 A 150 A 100 ns 20 A TO-220F-2L FMN-1206S 1.30 V 20 A 150 A 150 ns 30 A TO-3PF-2L FMN-3306S 1.30 V 30 A 150 A 200 ns 10 A x 2 TO-220F-3L FMN-2206S 1.30 V 10 A 150 A 100 ns TO-3PF-3L FMN-4306S 1.30 V 15 A 150 A 150 ns TO-3P-3L CTNS-4306S 1.30 V 15 A 150 A 100 ns TO-3P-3L CTNS-4606S 1.30 V 30 A 150 A 150 ns 15 A x 2 30 A x 2 DITOUSE-SGE Nov.09,2015 P.19 Rectification Diode for CCM PFC, Fast Recovery Diode trr ≤ 50 ns, VRM = 600 V For CCM Fast Recovery Diode trr = 50 ns (max.) VRM = 600 V, IF = 1.2 A to 20 A SiC Diode VRM = 650 V , IF = 10 A to 20 A VRM 600 V TO-220F-2L VF TO-220F-3L TO-3PF-3L TO-3P-3L VF (max.) IF RD2A 1.55 V 1.2 A 30 A 50 ns RL4A 1.5 V 3.0 A 80 A 50 ns TO-220F-2L FMX-G16S 1.5 V 5A 50 A 30 ns 8.0 A TO-220F-2L FMXK-1086S 1.75 V 8A 100 A 27 ns 10 A TO-220F-2L FMXA-1106S 1.98 V 10 A 100 A 28 ns FMX-1106S 1.60 V 10 A 100 A 30 ns 20 A TO-220F-2L FMXS-1206S 1.60 V 20 A 100 A 35 ns FMXK-2206S 1.75 V 10 A 100 A 27 ns FMXS-2206S 1.60 V 10 A 100 A 30 ns TO-3PF-3L FMD-4206S 1.70 V 10 A 100 A 50 ns 30 A x 2 TO-3P-3L CTXS-4606S 1.70 V 30 A 150 A 35 ns 10 A TO-220F-2L FMCA-11065 1.75 V 10A 40 A - (SiC) 10 A x 2 TO-220F-3L FMCA-22065 1.75 V 10A 40 A - (SiC) Package 1.2 A Axial (φ4.0/φ0.78) 3.0 A Axial (φ6.5/φ1.4) 5.0 A DITOUSE-SGE TO-220F-3L Nov.09,2015 Part Number Axial φ6.5 IFSM 50Hz Half wave IF (AVG) 10 A x 2 650 V Axial φ4.0 trr IF：IR=1：1 P.20 IMPORTANT NOTES The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest revision of the document before use. Application examples, operation examples and recommended examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights, life, body, property or any other rights of Sanken or any third party which may result from its use. Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or implied, as to the products, including product merchantability, and fitness for a particular purpose and special environment, and the information, including its accuracy, usefulness, and reliability, included in this document. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. Anti radioactive ray design is not considered for the products listed herein. Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken’s distribution network. The contents in this document must not be transcribed or copied without Sanken’s written consent. DITOUSE-SGE Nov.09,2015 P.21