Datasheet

InGaAs linear image sensor
G12230-512WB
Employs two InGaAs chips (cutoff wavelength: 1.65 μm, 2.15 μm)
Near infrared image sensor (0.95 to 2.15 μm)
The G12230-512WB is an InGaAs linear image sensor designed for near infrared multichannel spectrophotometry. Two InGaAs chips with different cutoff wavelengths are arranged very accurately in series. The G12230-512WB provides high S/N
over a wide spectral response range. The CMOS chip consists of charge amplifiers, a shift register, and a timing generator.
Charge amplifiers are configured with CMOS transistor array and are connected to each pixel of the InGaAs photodiode array.
Since the signal from each pixel is read in charge integration mode, high sensitivity and stable operation are attained in a wide
spectral response range. The package is hermetically sealed providing excellent reliability.
The signal processing circuit on the CMOS chip enables the selection of an optimum conversion efficiency (CE) for your application
from the available two types using external voltage.
Features
Applications
Employs two InGaAs chips
Near infrared multichannel spectrophotometry
Selectable from two conversion efficiency types
Non-destructive inspection equipment
Built-in saturation countermeasure circuit
Built-in CDS circuit*1
Built-in thermistor
Easy operation (built-in timing generator*2)
High resolution: 25 μm pitch
*1: A major source of noise in charge amplifiers is the reset noise generated when the integration capacitance is reset. However, the
CDS circuit, which takes the difference between the signal after the completion of the integration time and the signal immediately
after resetting, greatly reduces the reset noise.
*2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, external
PLDs (programmable logic device) are used to input the required timing signals. However, the image sensors internally generate all
timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings.
Structure
Parameter
Cooling
Image size
Total number of pixels
Number of effective pixels
Dedicated driver circuit
Pixel size (H × V)
Pixel pitch
Package
Window material
Specification
Two-stage TE-cooled
12.8 × 0.25
512
254 + 254
25 × 250
25
28-pin metal (refer to dimensional outline)
Sapphire (with anti-reflective coating)
www.hamamatsu.com
Unit
mm
μm
μm
-
1
InGaAs linear image sensor
G12230-512WB
V
Enlarged view of photosensitive area (unit: μm)
x
H
x
H
V
10
25
250
KMIRC0090EA
Block diagram (G11620-512SA)
Vdd
CMOS chip
INP
PDN
Vinp
Fvref
Shift
register
.....
CLK
RESET
Charge
amplifier
Timing generator
InGaAs
chip
.....
.....
Thermoelectric cooler+
Shift
register
AD_sp
.....
VIDEO
CMOS readout circuit
.....
AD_trig
Thermoelectric cooler-
Thermistor
KMIRC0091EA
2
InGaAs linear image sensor
G12230-512WB
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Reset pulse voltage
Gain selection terminal voltage
Operating temperature
Storage temperature
Soldering conditions
Thermistor power dissipation
Symbol
Vdd, INP, Fvref
Vinp, PDN
Vϕ
V(RES)
Vcfsel
Topr
Tstg
Pd_th
Condition
Min.
Typ.
Max.
Unit
Ta=25 °C
-0.3
-
+6
V
Ta=25 °C
Ta=25 °C
Ta=25 °C
No dew condensation*3
No dew condensation*3
-0.3
-0.3
-0.3
-20
-40
Up to 260 °C, up to 10 s
-
+6
+6
+6
+70
+85
V
V
V
°C
°C
mW
Ta=25 °C
-
400
*3: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.
Recommended terminal voltage (Ta=25 °C)
Parameter
Supply voltage
Differential reference voltage
Video line reset voltage
Input stage amplifier reference voltage
Photodiode cathode voltage
Ground
High
Clock pulse voltage
Low
High
Reset pulse voltage
Low
Symbol
Vdd
Fvref
Vinp
INP
PDN
GND
Vϕ
V(RES)
Min.
4.7
1.1
3.9
3.9
3.9
4.7
0
4.7
0
Typ.
5.0
1.2
4.0
4.0
4.0
0
5.0
0
5.0
0
Max.
5.3
1.3
4.1
4.1
4.1
5.3
0.4
5.3
0.3
Unit
V
V
V
V
V
V
V
V
Electrical characteristics (Ta=25 °C)
Parameter
Current consumption
Operation frequency
Video data rate
Video output voltage
High
Low
Output offset voltage
Output impedance
High
AD_trig, AD_sp
pulse voltage
Low
Thermistor resistance
Thermistor B constant*4
Symbol
I(Vdd)
Ifvref
Ivinp
Iinp
Ipdn
fop
DR
VH
VL
Vos
Zo
Vtrig, Vsp
Rth
B
Min.
0.1
0.1
9.0
-
Typ.
80
1
f
3.9
1.2
Fvref
5
Vdd
GND
10.0
3950
Max.
100
1
1
1
1
5
5
11.0
-
Unit
mA
MHz
MHz
V
V
kΩ
V
kΩ
K
*4: T1=25 °C, T2=50 °C
3
InGaAs linear image sensor
G12230-512WB
Electrical and optical characteristics (Ta=25 °C, Td=-20 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz)
Paramer
Symbol
Spectral response range
λ
Peak sensitivity wavelength
λp
Photosensitivity
S
Conversion efficiency*5
CCE
Photoresponse nonuniformity*6
PRNU
Full well capacity
Qsat
Saturation output voltage
Vsat
Dark output
VD
Dark current
ID
Readout noise*7
N
Dynamic range
Defective pixels*8
D
-
CE=16 nV/eCE=160 nV/eCE=16 nV/e1 to 254 ch
259 to 512 ch
1 to 254 ch
259 to 512 ch
CE=16 nV/eCE=160 nV/eCE=16 nV/eCE=16 nV/e-
Min.
1.45
1.8
0.7
0.85
162.5
16.2
2.6
-0.2
-5
-2
-50
6500
-
Typ.
0.95 to 1.65
1.4 to 2.15
1.55
1.95
0.82
1.0
16
160
±5
168.7
16.8
2.7
±0.02
0.5
±0.2
5
220
300
12200
-
Max.
1.65
2.05
±10
0.2
5
2
50
400
500
2
Unit
μm
μm
A/W
nV/e%
MeV
V/s
pA
μV rms
%
For switching the conversion efficiency, see the pin connections.
Measured at 50% saturation and 10 ms integration time after subtracting the dark output, excluding ch 1, 255 to 258, 512
Integration time when CE=16 nV/e- is 10 ms. Integration time when CE=160 nV/e- is 1 ms.
Pixels whose photoresponse nonuniformity, readout noise, or dark current is outside the specifications
Spectral response (typical example)
1.2
Td=25 °C
Td=-20 °C
1.0
Photosensitivity (A/W)
*5:
*6:
*7:
*8:
Condition
1 to 254 ch
259 to 512 ch
1 to 254 ch
259 to 512 ch
λ=λp, 1 to 254 ch
λ=λp, 259 to 512 ch
Cf=10 pF
Cf=1 pF
0.8
0.6
0.4
0.2
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Wavelength (μm)
KMIRB0094EA
4
InGaAs linear image sensor
G12230-512WB
Linearity error
Spectral transmittance of window material (typical example)
(Ta=25 °C)
100
20
(Td=-20 ˚C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, f=1 MHz, CE=16 nV/eˉ)
15
95
Linearity error (%)
Transmittance (%)
10
90
85
80
5
0
-5
-10
75
-15
-20
70
0.5
1.0
1.5
2.0
2.5
1
3.0
10
100
1000
10000
Output voltage (mV)
Wavelength (μm)
KMIRB0095EA
KMIRB0070EA
Equivalent circuit
Cf_select
PDN
S/H
VIDEO
Odd
pixels
Even
pixels
INP
Fvref
Odd pixels
Cf_select
S/H
INP
Even pixels
Photodiode array
Charge amplifier array
CMOS readout circuit
KMIRC0054EA
5
InGaAs linear image sensor
G12230-512WB
Timing chart
CLK
RESET
Integration time (setting)
5 CLK
Blank
Integration time (actual)
5 CLK
AD_sp
AD_trig
512CLK
VIDEO
1
tf(clk)
CLK
2
511 512
tr(clk)
tpw(clk)
tr(res)
tf(res)
RESET
tpw(res)
KMIRC0092EA
Parameter
Clock pulse frequency
Clock pulse width
Clock pulse rise/fall times
High
Reset pulse width
Low
Reset pulse rise/fall times
Symbol
f
tpw(clk)
tr(clk), tf(clk)
tpw(res)
tr(res), tf(res)
Min.
0.1
60
0
6
540
0
Typ.
1
500
20
20
Max.
5
5000
30
30
Unit
MHz
ns
ns
clocks
ns
6
InGaAs linear image sensor
G12230-512WB
Connection example
Pulse
generator
CLK
AD_sp
RESET
AD_trig
Controller
Buffer amp
Buffer amp
Cf_select 1
ADC
Cf_select 2
INP
Supply
voltage
PDN
Vinp
Fvref
Vdd
VIDEO
GND
Buffer amp
KMIRC0056EB
Output waveform of a pixel
Video & AD_sp
1 ch 2 ch 3 ch 4 ch 5 ch 6 ch
Video
AD_sp
Video & AD_trig
254 255 256 257 258 259 ch
1 ch 2 ch 3 ch 4 ch 5 ch 6 ch
Video
Video
AD_trig
AD_trig
No output from 256 and 257 ch
7
InGaAs linear image sensor
G12230-512WB
Pin connections (top view)
Cf SELECT1
Cf SELECT2
RESET
TEAD_SP
AD_TRIG
Vdd
GND
INP
CLK
PDN
TE+
THERM
THERM
CASE
Vinp
Fvref
VIDEO
KMIRC0089EA
PDN
AD_sp
Input/
output
Input
Output
Cf_select1, 2
Input*9
Thermistor
AD_trig
Output
Output
RESET
Input
CLK
Input
INP
Input
Vinp
Input
Fvref
Input
VIDEO
Vdd
GND
CASE
Output
Input
Input
-
TE+, TE-
Input
Terminal name
Function and recommended connection
Remark
InGaAs photodiode’s cathode bias terminal. Set to the same potential as INP.
Digital start signal for A/D conversion
Signal for selecting the feedback capacitance (integration capacitance) on the
CMOS chip
Thermistor for monitoring the temperature inside the package
Sampling sync signal for A/D conversion
Reset pulse for initializing the feedback capacitance in the charge amplifier
formed on the CMOS chip. Integration time is determined by the high level period
of this pulse.
Clock pulse for operating the CMOS shift register
Input stage amplifier reference voltage. This is the supply voltage for operating
the signal processing circuit on the CMOS chip. Set to the same potential as
PDN.
Video line reset voltage. This is the supply voltage for operating the signal
processing circuit on the CMOS chip.
Differential amplifier reference voltage. This is the supply voltage for operating
the signal processing circuit on the CMOS chip.
Differential amplifier output. This is an analog video signal.
Supply voltage (+5 V) for operating the signal processing circuit on the CMOS chip
Ground (0 V) for the signal processing circuit on the CMOS chip
This terminal is connected to the package.
Power supply terminal for the thermoelectric cooler for cooling the photodiode
array
4.0 V
0 to 5 V
0 V or 5 V
0 to 5 V
0 to 5 V
0 to 5 V
4.0 V
4.0 V
1.2 V
1.2 to 3.9 V
5V
0V
-
*9: The conversion efficiency is determined by the supply voltage to the Cf_select terminal as follows.
Conversion efficiency
16 nV/e- (low gain)
160 nV/e- (high gain)
Cf_select1
High
High
Cf_select2
High
Low
Low: 0 V (GND), High: 5 V (Vdd)
8
InGaAs linear image sensor
G12230-512WB
Specifications of TE-cooler (Ta=25 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz)
Parameter
Allowable TE cooler current
Allowable TE cooler voltage
Temperature difference*10
Thermistor resistance
Thermistor power dissipation
Condition
Symbol
Ic max
Vc max
∆T
Rth
Pth
Ic=2.6 A
Min.
50
9
-
Typ.
10
-
Max.
2.8
4.0
11
400
Unit
A
V
°C
kΩ
mW
*10: Temperature difference between the photosensitive area and package heat dissipation area
TE-cooler temperature characteristics (Ta=25 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz)
(Typ. heatsink 0.4 °C/W)
Voltage
Temperature difference
Voltage (V)
6
60
50
5
40
4
30
3
20
2
10
1
0
Temperature difference (°C)
7
-10
0
0
1
2
3
Current (A)
KMIRB0032EC
Thermistor temperature characteristics
(Typ.)
1000
Thermistor resistance (kΩ)
Temperature
(°C)
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
100
10
1
-40 -30 -20 -10
0
10
20
30
40
50
60
Thermistor
resistance
(kΩ)
281
208
155
117
88.8
68.4
53.0
41.2
32.1
25.1
19.8
15.7
Temperature
(°C)
20
25
30
35
40
45
50
55
60
65
70
Thermistor
resistance
(kΩ)
12.5
10.0
8.06
6.53
5.32
4.36
3.59
2.97
2.47
2.07
1.74
70
Temperature (°C)
KMIRB0061EA
9
InGaAs linear image sensor
G12230-512WB
Dimensional outline (unit: mm)
63.5 ± 0.15
53.3 ± 0.15
38.1 ± 0.15
2.54 ± 0.15
35.6 ± 0.15
R 1.59
27.2 ± 0.15
15
1
6.4 ± 1
1.0 ± 0.2
3.8 ± 0.3
5.8 ± 0.2
Index mark
6.15 ± 0.2
Photosensitive
surface
20.3 ± 0.15
3.0 ± 0.15
10.2 ± 0.15
22.9 ± 0.15
25.4 ± 0.15
28
2.54 ± 0.15
0.45 ± 0.05
14
Photosensitive area, left side: 1 ch
Position accuracy of photosensitive area center:
±0.3 (with respect to package center)
Rotation accuracy of photosensitive area:
±2° (with respect to package center)
Package material: FeNi alloy
Lead processing: Ni/Au plating
Lead material: FeNiCo alloy
Window refractive index of window material: n=1.76
Window material thickness: 0.66
AR coat: coated (1.55 μm peak)
Window sealing method: brazing
Cap sealing: welding
KMIRA0033EA
Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic
charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Safety consideration
∙ Image sensors
Information described in this material is current as of April, 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
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China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMIR1028E01 Apr. 2016 DN
10
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