Schottky Barrier Diodes (SBD) MA3J744 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 2.1 ± 0.1 1.25 ± 0.1 0.425 ■ Features • Small S-mini type package allowing high-density mounting • Allowing to rectify under (IF(AV) = 200 mA) condition 0.3 − 0 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 + 0.1 0.425 1 3 2 Symbol Rating Unit VR 30 V Repetitive peak reverse voltage VRRM 30 V Average forward current IF(AV) 200 mA Peak forward current IFM 300 mA Non-repetitive peak forward surge current* IFSM 1 A Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C + 0.1 0.9 ± 0.1 Parameter Reverse voltage (DC) 0.15 − 0.05 ■ Absolute Maximum Ratings Ta = 25°C 1 : Anode 2 : NC 3 : Cathode EIAJ : SC-70 Flat S- Mini Type Package (3-pin) Marking Symbol: M1M Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 50 µA 0.55 V Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IF = 200 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 30 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA3J744 Schottky Barrier Diodes (SBD) IF V F IR VR VF Ta 103 105 0.5 10 1 10−1 10−2 IF = 200 mA 0.3 100 mA 0.2 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) 40 80 120 160 200 IR T a 104 30 25 20 15 10 15 V 5V 103 VR = 30 V 102 10 5 0 0 5 10 15 20 25 Reverse voltage VR (V) 2 30 1 −40 25°C 0 40 80 120 160 Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) 105 Reverse current IR (µA) Terminal capacitance Ct (pF) 35 102 1 0 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 100°C 10 mA Ct VR 40 103 10 0.1 0 Ta = 150°C 104 Reverse current IR (µA) 0.4 − 20°C Forward voltage VF (V) Forward current IF (mA) 100°C 25°C 102 T = 150°C a 200 30