Power Transistors 2SD2136 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 Unit: mm ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 3 A Peak collector current ICP 5 A Collector power dissipation PC 1.5 W Tj 150 °C Storage temperature Tstg −55 to +150 °C 90˚ 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C Junction temperature 0.85±0.1 1.0±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 10.8±0.2 0.65±0.1 16.0±1.0 • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 2.5±0.1 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 30 mA, IB = 0 VBE VCE = 4 V, IC = 3 A 1.8 V Collector-emitter cutoff current (Emitter-base short) ICES VCE = 60 V, VBE = 0 200 µA Collector-emitter cutoff current (Base open) ICEO VCE = 30 V, IB = 0 300 µA IEBO VEB = 6 V, IC = 0 Base-emitter voltage *1 Emitter-base cutoff current (Collector open) Forward current transfer ratio *1 Min VCE = 4 V, IC = 1 A 40 *1 VCE = 4 V, IC = 3 A 10 VCE(sat) Typ Max 60 hFE1 *2 hFE2 Collector-emitter saturation voltage Conditions Unit V IC = 3 A, IB = 0.375 A 1 mA 250 1.2 V Transition frequency fT VCE = 5 V, IE = − 0.1 A, f = 200 MHz 220 MHz Turn-on time ton IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A 0.5 µs Storage time tstg 2.5 µs Fall time tf 0.4 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank P Q R hFE1 40 to 90 70 to 150 120 to 250 Publication date: September 2003 SJD00246BED 1 2SD2136 PC Ta IC VCE 2.0 8 TC=25˚C 1.6 0.8 0.4 90mA 80mA 70mA 60mA 50mA 40mA 3 2 30mA 20mA 1 40 80 120 0 160 0 2 4 25˚C 1 –25˚C 0.1 1 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) TC=100˚C 8 10 TC=100˚C 102 25˚C –25˚C 10 0.1 1.6 2.0 t=100ms IC t=1s t=10ms 0.1 100 1 250 200 150 100 50 0 0.01 10 0.1 1 10 Collector current IC (A) Without heat sink 103 102 10 1 10−1 10−4 10−3 10−2 10−1 1 Time t (s) Collector-emitter voltage VCE (V) SJD00246BED 2.4 VCB=10V f=200MHz TC=25˚C 104 Thermal resistance Rth (°C/W) Collector current IC (A) 1.2 Rth t ICP 10 0.8 300 Collector current IC (A) 10 1 0.4 Base-emitter voltage VBE (V) 103 1 0.01 10 Single pulse TC=25˚C 0.01 0.1 0 fT I C Safe operation area 1 2 0 12 VCE=4V Collector current IC (A) 100 4 hFE IC 10 0.1 6 104 IC/IB=8 –25˚C TC=100˚C Collector-emitter voltage VCE (V) VCE(sat) IC 100 0.01 0.01 6 10mA Transition frequency fT (MHz) 0 Collector current IC (A) 1.2 25˚C IB=100mA Ambient temperature Ta (°C) 2 VCE=4V 4 Collector current IC (A) Collector power dissipation PC (W) Without heat sink 0 IC VBE 5 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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