VLCS5130 Datasheet

VLCS5130
www.vishay.com
Vishay Semiconductors
High Brightness LED, Ø 5 mm Untinted Non-Diffused Package
FEATURES
• Untinted non-diffused lens
Available
• Utilizing ultrabright AllnGaP technology
• Very high luminous intensity
• Very small emission angle
• High operating temperature: Tj (chip junction
temperature) up to 125 °C for AllnGaP devices
• Luminous intensity and color categorized for
each packing unit
19223
DESCRIPTION
• ESD-withstand voltage: Up to 2 kV according
to JESD22-A114-B
The VLC.51.. series is a clear, non-diffused 5 mm LED for
high end applications where supreme luminous intensity
and a very small emission angle is required.
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
These lamps with clear untinted plastic case utilize the
highly developed ultrabright AlInGaP technology.
The very small viewing angle of these devices provide a very
high luminous intensity.
APPLICATIONS
PRODUCT GROUP AND PACKAGE DATA
• Outdoor LED panels, displays
• Product group: LED
• Instrumentation and front panel indicators
• Package: 5 mm
• Central high mounted stop lights (CHMSL) for motor
vehicles
• Interior and exterior lighting
• Product series: power
• Replaces incandescent lamps
• Angle of half intensity: ± 9°
• Traffic signals and signs
• Light guide design
PARTS TABLE
PART
VLCS5130
COLOR
Red
LUMINOUS INTENSITY
(mcd)
MIN.
TYP.
MAX.
7500
25 000
-
at IF
(mA)
50
WAVELENGTH
(nm)
MIN.
TYP. MAX.
620
624
at IF
(mA)
630
50
FORWARD VOLTAGE
(V)
MIN.
TYP.
MAX.
-
2.2
3.0
at IF
(mA)
TECHNOLOGY
50
AlInGaP on Si
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
VLCS5130
PARAMETER
TEST CONDITION
Reverse voltage (1)
DC forward current
Surge forward current
VALUE
UNIT
VR
5
V
mA
Tamb  85°C
IF
50
tp  10 μs
IFSM
0.1
A
PV
150
mW
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
SYMBOL
t  5 s, 2 mm from body
Thermal resistance junction/ambient
Tj
125
°C
Tamb
- 40 to + 100
°C
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
300
K/W
Note
(1) Driving the LED in reverse direction is suitable for short term application
Rev. 1.3, 25-Apr-13
Document Number: 81938
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VLCS5130
www.vishay.com
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
VLCS5130, RED
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Luminous intensity (1)
PARAMETER
IF = 50 mA
VLCS5130
IV
7500
25 000
-
mcd
Dominant wavelength (2)
IF = 50 mA
d
620
624
630
nm
Peak wavelength
IF = 50 mA
p
-
631
-
nm
Spectral bandwidth at 50 % Irel max.
IF = 50 mA

-
18
-
nm
Angle of half intensity
IF = 50 mA

-
±9
-
deg
Forward voltage (3)
IF = 50 mA
VF
-
2.2
3.0
V
Reverse voltage
IR = 10 μA
VR
5
-
-
V
Temperature coefficient of VF
IF = 50 mA
TCVF
-
-2
-
mV/K
Temperature coefficient of d
IF = 50 mA
TCd
-
0.05
-
nm/K
Notes
(1) In one packing unit I
Vmax./IVmin.  2.0
(2) Wavelengths are tested at a current pulse duration of 25 ms and a tolerance of ± 1 nm
(3) Forward voltages are tested at a current pulse duration of 1 ms and a tolerance of ± 0.05 V
LUMINOUS INTENSITY CLASSIFICATION
LIGHT INTENSITY (mcd)
GROUP
MIN.
MAX.
MM
7500
15 000
NN
10 000
20 000
PP
13 500
27 000
QQ
18 000
36 000
RR
24 000
48 000
SS
32 000
64 000
TT
43 000
86 000
UU
57 500
115 000
Note
• Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %.
The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each
reel (there will be no mixing of two groups on each reel).
In order to ensure availability, single brightness groups will not be orderable.
In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped in any one reel.
In order to ensure availability, single wavelength groups will not be orderable.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
60
0°
10°
20°
red
30
20
10
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
40
Srel - Relative Sensitivity
IF - Forward Current (mA)
30°
50
80°
0
0
16710_2
20
40
60
80
100
120
Tamb - Ambient Temperature (°C)
Fig. 1 - Maximum Permissible Forward Current vs.
Ambient Temperature
Rev. 1.3, 25-Apr-13
0.6
0.4
0.2
0
94 8351
Fig. 2 - Relative Intensity vs. Angular Displacement
Document Number: 81938
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VLCS5130
www.vishay.com
1.2
0.8
0.6
0.4
0.2
0.0
- 0.2
500 540 580 620 660 700 740 780
λ- Wavelength (nm)
21412
Fig. 3 - Relative Intensity vs. Wavelength
100
IF - Forward Current (mA)
90
80
70
60
50
40
30
20
10
0
1.5
21414
2.0
2.5
VF - Forward Voltage (V)
6
4
2
0
-2
-4
-6
-8
0
20
40
60
80
100
IF - Forward Current (mA)
Fig. 6 - Change of Dominant Wavelength vs. Forward Current
700
600
500
400
300
200
100
0
- 100
- 200
- 300
- 400
- 500
- 50 - 25
0
25
50
75
100 125
Tamb - Ambient Temperature (°C)
21416
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Change of Forward Votage vs. Ambient Temperature
1.8
IV rel - Relative Luminous Intensity
10
IV rel - RelativeLuminous Intensity
8
21418
ΔVF - Change of Forward Voltage (mV)
Irel - Relative Intensity
1.0
Δλd - Change Dominant Wavelength (nm)
Vishay Semiconductors
1
0.1
21415
10
100
IF - Forward Current (mA)
Fig. 5 - Relative Luminous Intensity vs. Forward Current
Rev. 1.3, 25-Apr-13
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
- 50 - 25
0.01
1
1.6
21413
0
25
50
75
100 125
Tamb - Ambient Temperature (°C)
Fig. 8 - Relative Luminous Intensity vs. Ambient Temperature
Document Number: 81938
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VLCS5130
www.vishay.com
Vishay Semiconductors
Δλd - Change Dominant Wavelength (nm)


8
6
4
2
0
-2
-4
-6
-8
-50
-25
0
25
50
75
100 125
Tamb - Ambient Temperature (°C)
21417
Fig. 9 - Change of Dominant Wavelength vs. Ambient Temperature
PACKAGE DIMENSIONS in millimeters
C
< 0.7
(4.9)
7.7 ± 0.15
8.7 ± 0.3
R2.49 (sphere)
Area not plane
35.7 ± 0.55
12.7 ± 0.3
Ø 5.8 ± 0.15
A
Ø 5 ± 0.15
1 min.
1.1 ± 0.25
technical drawings
according to DIN
specifications
+ 0.15
0.5 - 0.05
+ 0.15
0.5 - 0.05
2.54 nom.
6.544-5258.09-4
Issue: 4; 19.05.09
15909
Rev. 1.3, 25-Apr-13
Document Number: 81938
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000