Datasheet

Photosensor with front-end IC
S13282-01CR
Compact APD suitable for various light level
detection
The S13282-01CR is a compact optical device that integrates a Si APD and preamp. It has a built-in DC feedback circuit for
reducing the effects of background light. It also provides excellent noise and frequency characteristics.
Features
Applications
High-speed response: 200 MHz
Distance measurement
Two-level gain switch function
(low gain: single output, high gain: defferential output)
Option
Reduced background light effects
Small waveform distortion when excessive light is incident
Driver circuit
C13283-03
Structure
Parameter
Detector
Photosensitive area size*1
Package
Symbol
A
-
Specification
Si APD
ϕ0.2
Plastic
Unit
mm
-
*1: Photosensitive area in which a typical gain can be obtained
Absolute maximum ratings
Parameter
Supply voltage (for preamp)
Reverse voltage (for APD)
Reverse current (DC)
Forward current
DCFB terminal voltage
Gain terminal voltage
Operating temperature
Storage temperature
Soldering conditions*3
Symbol
Vcc max
V_APD
IR max
IF max
Topr
Tstg
-
Condition
No dew condensation*2
No dew condensation*2
Value
4.5
0 to VBR
0.2
10
Vcc + 0.7
Vcc + 0.7
-20 to +60
-40 to +80
Peak temperature 240 °C, 1 time (see P.5)
Unit
V
V
mA
mA
V
V
°C
°C
-
*2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
*3: JEDEC level 5a
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
1
Photosensor with front-end IC
S13282-01CR
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Symbol
λ
λp
S
Quantum efficiency
Breakdown voltage
Temperature coefficient of
breakdown voltage
Dark current
Temperature coefficient of
dark current
QE
VBR
Condition
Min.
M=100
λ=900 nm, M=100,
low gain
λ=900 nm, M=100,
high gain
λ=900 nm, M=1
ID=100 μA
ΔTID
M=100
λ=900 nm, M=100
Low gain
High gain
Low gain
fcl
High gain
Low gain
fch
High gain
f=10 MHz, M=100
en
f=100 MHz, M=100
Low gain
High gain
Voffset High gain
Low gain
Vp-p max
High gain
Vcc1, Vcc2
Current consumption
Ic
Low cutoff frequency
High cutoff frequency
Input conversion noise
power
Output voltage level
Output offset voltage
Maximum output voltage
amplitude
Supply voltage
Spectral response
0.1
0.2
0.4
2
4
8
120
70
160
200
%
V
-
1.1
-
V/°C
10
100
1000
pA
-
1.1
-
times/°C
17
20
120
100
0.6
0.7
3.135
25
28
0.01
0.5
50
65
0.9
1
-0.5
±0.7
3.3
32
35
100
130
1.2
1.3
±100
3.465
-
mA
MHz
MHz
fW/Hz1/2
V
mV
V
V
Quantum efficiency vs. wavelength
(Typ. Ta=25 °C, M=100)
60
Unit
nm
nm
MV/W
ΔTVBR
ID
Max.
-
Typ.
400 to 1150
840
(Typ. Ta=25 °C)
100
90
80
Quantum efficiency (%)
Photosensitivity (A/W)
50
40
30
20
70
60
50
40
30
20
10
10
0
400
600
800
1000
1200
Wavelength (nm)
0
400
600
800
1000
1200
Wavelength (nm)
KPICB0187EB
KPICB0188EA
2
Photosensor with front-end IC
S13282-01CR
Dark current vs. reverse voltage
Gain vs. reverse voltage
(Typ. Ta=25 °C)
100 μA
(Typ. λ=900 nm)
10000
10 μA
0 °C
1000
20 °C
40 °C
60 °C
-10 °C
100 nA
Gain
Dark current
1 μA
10 nA
100
1 nA
100 pA
10
10 pA
1 pA
0
20
40
60
80 100 120 140 160 180 200
1
100
120
140
160
180
200
220
Reverse voltage (V)
Reverse voltage (V)
KPICB0189EB
KPICB0191EA
Frequency characteristics (typical example)
(Ta=25 °C)
5
0
Relative gain (dB)
Low
-5
-10
High
-15
-20
-25
0.1
1
10
100
1000
Frequency (MHz)
KPICB0192EB
3
Photosensor with front-end IC
Directivity
S13282-01CR
(Typ. light source: tungsten lamp)
20°
10°
0°
10°
20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
100
80
60
40
20
0
20
40
60
80
90°
100
Relative sensitivity (%)
KPICB0193EA
Truth table
Gain selection
Gain selection
0
1
Gain
Low gain (× 1)
High gain (× 20)
DCFB_dis selection
DCFB_dis selection
0
1
Background light elimination function
ON
OFF
Block diagram
V_APD
APD
Vcc1
Vcc2
Rf
SW1
TIA
VGA
out1
SW2
out2
SW3
DCFB
DCFB
GND
Gain
The DCFB (DC feedback) circuit detects the DC component of photocurrent, and
reduces the effects of background light through the differential processor.
KPICC0285EB
4
Photosensor with front-end IC
S13282-01CR
Measured example of temperature profile with our hot-air reflow oven for product testing
300 °C
240 °C max.
Temperature
220 °C
190 °C
170 °C
Preheat
70 to 90 s
Soldering
40 s max.
Time
KPICB0171EA
∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of
60% or less, and perform soldering within 24 hours.
∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before
actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance.
Dimensional outline (unit: mm)
0.8
0.2
4.8
5.5
1.60
1.1
1.1
0.4
5.1
1.0
KPICC0286EC
Dimensions without tolerance:
reference value
0.60
0.6
2.7
(6 ×) P0.8=4.8
0.3
0.6
0.6
0.6
2.6
3.9
0.3
Photosensitive area
ɸ0.2
Recommended land pattern (unit: mm)
Pin no. Function Pin no. Function
NC
out2
NC
GND
GND
Gain
GND
Vcc2
DCFB
Vcc1
GND
NC
out1
V_APD
KPICA0100EC
5
Photosensor with front-end IC
S13282-01CR
Connection example
Vcc1
V_APD
1 kΩ
0.047 μF/
630 V
Vcc2
L
L
10 μF
10 μF
0.1 μF
0.1 μF
L∙∙∙BLM18PG221SN1
APD
Rf
Out1
TIA
VGA
Out2
DCFB
200 Ω 200 Ω
DCFB
GND
Gain
KPICC0298EA
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic packages
∙ Surface mount type products
Information described in this material is current as of June, 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KPIC1096E04 Jun. 2016 DN
6
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