GaAs SPDT Switch DC - 20 GHz MASW20000 GND Features ● ● ● ● ● ● ● Very Broadband Performance Low Insertion Loss, 1.75 dB Typical @ 18 GHz High Isolation, 50 dB Typical @ 18 GHz Fast Switching Time, 2 nS Typical Reflective Configuration Ultra Low DC Power Consumption Via Hole Grounding Frequency Range Insertion Loss VSWR Isolation DC-20.0 GHz DC-10.0 GHz DC-18.0 GHz DC-20.0 GHz 1.7 dB Max 2.1 dB Max 2.5 dB Max DC-10.0 GHz DC-18.0 GHz DC-20.0 GHz 1.60:1 Max 1.80:1 Max 2.00:1 Max DC-10.0 GHz DC-18.0 GHz DC-20.0 GHz 50 dB Min 42 dB Min 40 dB Min V 2.00 GND GND GND RF1 RF2 GND GND A1 Guaranteed Specifications* @ +25°C** RF B2 B1 A2 Typical Performance INSERTION LOSS (dB) 2.0 1.5 1.0 0.5 0.0 0 4 8 12 16 20 8 12 16 20 ISOLATION (dB) 80 Operating Characteristics 60 50 Ω Nominal Impedance Switching Characteristics Trise, Tfall (10/90% or 90/10% RF) 2 ns Typ Ton, Toff (50% CTL to 90/10% RF) Transients (in-Band) Input Power for 1 dB Compression Control Voltages (Vdc) 0.5-20 GHz 0.05 GHz 40 20 3 ns Typ 20 mV Typ 0 2.0 0/-5 +25 dBm Typ +18 dBm Typ 0 4 VSWR 1.8 1.6 Input Output 1.4 Intermodulation Intercept point (for two-tone input power up to +5 dBm) Intercept Points IP2 IP3 1.2 1.0 0.5-20 GHz 0.05 GHz +59 dBm Control Voltages (Complimentary Logic) Vin Low Vin Hi Die Size +43 dBm Typ +27 dBm Typ 0 to -0.2 V @ 5 µA Max -5 V @50 µA Max 0.083”x 0.035”X 0.004” (2.10mm X 0.89mm X 0.10mm) * Wafer level data.All specifications apply with 50 Ω impedance connected to all RF ports, 0 and -5 Vdc control voltages. ** Loss change 0.0025 dB/°C. (From -55°C to +85°C) 0 4 8 12 FREQUENCY (GHz) Schematic 16 20 Handling, Mounting and Bonding Procedure MASW20000 V 2.00 Handling Precautions Permanent damage to the MASW20000 may occur if the following precautions are not adhered to: A. Cleanliness — The MASW20000 should be handled in a clean environment. DO NOT attempt to clean unit after the MASW20000 is installed. B. Static Sensitivity — All chip handling equipment and personnel should be DC grounded. C. Transient — Avoid instrument and power supply transients while bias is applied to the MASW20000. Use shielded signal and bias cables to minimize inductive pick-up. D. Bias —Apply voltage to either control port A1/B2 or A2/B1 only when the other is grounded. Neither port should be allowed to ”float”. E. General Handling — It is recommended that the MASW20000 chip be handled along the long side of the die with a sharp pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers. Truth Table*** Control Inputs Condition Of Switch A1/B2 A2/B1 RF1 RF2 VINHi V INLow VINLow VINHi On Off Off On VinLow 0 to -0.2V VinHi -5V ***For normal SPDT operation A1 is connected to B2 and A2 is connected to B1. Maximum Ratings A. Control Voltage (A1/B2 or A2/B1): –8.5 Vdc B. Max Input RF Power: +34 dBm C. Storage Temperature: –65°C to +175°C D. Max Operating Temperature: +175°C Mounting The MASW20000 is back-metallized with Pd/Ni/Au (100/1,000/ 30,000Å) metallization. It can be die-mounted with AuSn eutectic preforms or with thermally conductive epoxy. The package surface should be clean and flat before attachment. Eutectic Die Attach: A. A 80/20 gold/tin preform is recommended with a work surface temperature of approximately 255°C and a tool temperature of 265°C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290°C. B. DO NOT expose the MASW2000 to a temperature greater than 320°C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. BondPad Dimensions Inches (mm) RF, RF1, RF2: 0.004 x 0.004 (0.100 x 0.100) A1, A2, B1, B2: 0.004 x 0.004 (0.100 x 0.100) Epoxy Die Attach: A. Apply a minimum amount of epoxy and place the MASW20000 into position. A thin epoxy fillet should be visible around the perimeter of the chip. B. Cure epoxy per manufacturer’s recommended schedule. Die Size Inches (mm) C. Electrically conductive epoxy may be used but is not required. Wire Bonding A. Ball or wedge bond with 1.0 mil diameter pure gold wire. Gold ribbon (3.0 mil X 0.5 mil) may also be used.Thermosonic wire bonding with a nominal stage temperature of 150°C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels to achieve reliable wirebonds. B. Wirebonds should be started on the chip and terminated on the package. 0.083 x 0.035 x 0.004 (2.10 x 0.89x 0.10)