Switching Diodes MA6Z121 (MA6S121) Silicon epitaxial planar type Unit : mm For switching circuit 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 ■ Features • Small S-mini type 6-pin package • Three isolated elements contained in one package, allowing highdensity mounting • Flat lead type, resulting in improved mounting efficiency and solderability with the high-speed mounting machine • Short reverse recovery time trr • Small terminal capacitance, Ct 5° Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Average forward IF(AV) 100 mA Peak forward current*1 IFM 225 mA Non-repetitive peak forward surge current*1,2 IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (0.15) 0 to 0.1 Symbol current*1 0.16+0.10 –0.06 0.2±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.7±0.1 (0.425) 5 5° 6 1 : Anode 1 4 : Cathode 3 2 : Anode 2 5 : Cathode 2 3 : Anode 3 6 : Cathode 1 SMini6-F1 Package Marking Symbol: M2D Internal Connection Note) *1 : Value for single diode *2 : t = 1 s 1 6 2 5 3 4 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 0.1 µA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 3 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. 105 MA6Z121 Switching Diodes IR V R 102 104 Ta = 150°C 100°C 25°C 10 − 20°C 1 10−1 VF Ta 1.6 1.4 Ta = 150°C Forward voltage VF (V) 105 Reverse current IR (nA) Forward current IF (mA) IF VF 103 100°C 103 102 25°C 1.2 1.0 IF = 100 mA 0.8 10 mA 0.6 3 mA 0.4 10 0.2 0 0.2 0.4 0.6 0.8 1.0 1 1.2 0 Forward voltage VF (V) 20 IR Ta 100 35 V 103 102 10 40 80 120 0 160 Ambient temperature Ta (°C) 200 80 120 0.8 0.6 0.4 0.2 20 40 60 80 Reverse voltage VR 200 100 (V) 120 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0 160 IF(surge) tW 1 000 1.0 0 40 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 6V 0 0 −40 120 Ct VR Terminal capacitance Ct (pF) VR = 75 V Reverse current IR (nA) 80 1.2 104 106 60 Reverse voltage VR (V) 105 1 −40 40 Forward surge current IF(surge) (A) 10−2 0.1 0.3 1 3 10 Pulse width tW (ms) 30 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR