TLHK46Q1R2 Datasheet

TLHK46Q1R2
www.vishay.com
Vishay Semiconductors
High Intensity LED in Ø 3 mm Tinted Diffused Package
FEATURES
• AlInGaP technology
• Standard Ø 3 mm (T-1) package
• Small mechanical tolerances
• Suitable for DC and high peak current
• Very wide viewing angle
• Luminous intensity categorized
19222
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
This device has been designed to meet the increasing
demand for AlInGaP technology.
APPLICATIONS
It is housed in a 3 mm diffused plastic package. The wide
viewing angle of these devices provides a high on-off
contrast.
• Status lights
• Off / on indicator
All packing units are categorized in luminous intensity
groups. That allows users to assemble LEDs with uniform
appearance.
• Background illumination
PRODUCT GROUP AND PACKAGE DATA
• Legend light
• Readout lights
• Maintenance lights
• Product group: LED
• Package: 3 mm
• Product series: standard
• Angle of half intensity: ± 60°
PARTS TABLE
PART
COLOR
TLHK46Q1R2
LUMINOUS INTENSITY
(mcd)
Red
MIN.
TYP.
MAX.
71
-
180
at IF
(mA)
20
WAVELENGTH
(nm)
MIN.
-
TYP. MAX.
630
-
at IF
(mA)
FORWARD VOLTAGE
at IF
(V)
(mA)
MIN. TYP. MAX.
20
-
2.0
2.6
20
TECHNOLOGY
AlInGaP on GaAs
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
TLHK46Q1R2
PARAMETER
TEST CONDITION
SYMBOL
VALUE
VR
5
V
Tamb ≤ 60 °C
IF
30
mA
tp ≤ 10 μs
IFSM
0.1
A
Tamb ≤ 60 °C
PV
80
mW
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.2, 14-Oct-14
t ≤ 5 s, 2 mm from body
UNIT
Tj
100
°C
Tamb
-40 to +100
°C
Tstg
-55 to +100
°C
Tsd
260
°C
RthJA
400
K/W
Document Number: 83494
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLHK46Q1R2
www.vishay.com
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TLHK46Q1R2, RED
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Luminous intensity (1)
PARAMETER
IF = 20 mA
IV
71
-
180
mcd
Dominant wavelength
IF = 20 mA
λd
-
630
-
nm
Peak wavelength
IF = 20 mA
λp
-
643
-
nm
Angle of half intensity
IF = 20 mA
ϕ
-
± 60
-
deg
Forward voltage
IF = 20 mA
VF
-
2.0
2.6
V
Reverse voltage
IR = 10 μA
VR
5
-
-
V
VR = 0 V, f = 1 MHz
Cj
-
15
-
pF
Junction capacitance
Note
(1) In one packing unit I
Vmin./IVmax. ≤ 0.5
LUMINOUS INTENSITY CLASSIFICATION
GROUP
LIGHT INTENSITY (mcd)
STANDARD
OPTIONAL
MIN.
1
71
90
2
90
112
1
112
140
2
140
180
Q
R
MAX.
Note
• Luminous intensity is tested at a current pulse duration of 25 ms
and an accuracy of ± 11 %.
The above type numbers represent the order groups which
include only a few brightness groups. Only one group will be
shipped on each reel (there will be no mixing of two groups on
each reel).
In order to ensure availability, single brightness groups will not
be orderable.
In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped
in any one reel.
In order to ensure availability, single wavelength groups will not
be orderable..
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
0°
50
40
30
20
10
0
20
40
60
80
40°
1.0
0.9
50°
0.8
60°
70°
0.7
100
T amb - Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Ambient Temperature for InGaN
Rev. 1.2, 14-Oct-14
20°
30°
80°
0
95 10894
10°
ϕ - Angular Displacement
I v rel - Relative Luminous Intensity
I F - Forward Current (mA)
60
0.6
0.4
0.2
0
95 10043
Fig. 2 - Relative Luminous Intensity vs. Angular Displacement
Document Number: 83494
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLHK46Q1R2
www.vishay.com
Vishay Semiconductors
10
IV rel - Relative Luminous Intensity
IF - Forward Current (mA)
100
10
1
0.1
0.01
1
1
1.5
2
2.5
1
3
VF - Forward Voltage (V)
95 10878
17511
Fig. 3 - Forward Current vs. Forward Voltage
10
IF - Forward Current (mA)
100
Fig. 5 - Relative Luminous Intensity vs. Forward Current
1.2
1.6
1.0
Irel - Relative Intensity
I V rel - Relative Luminous Intensity
red
1.2
0.8
0.4
0.8
0.6
0.4
0.2
0
0
96 12077-2
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 4 - Relative Luminous Intensity vs. Ambient Temperature
Rev. 1.2, 14-Oct-14
0.0
600
96 12075
620
640
660
680
700
λ - Wavelength (nm)
Fig. 6 - Relative Intensity vs. Wavelength
Document Number: 83494
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLHK46Q1R2
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
Ø 3.2 ± 0.15
A
AREA NOT PLANE
5.8 ± 0.3
34.4 ± 0.5
< 0.6
(2.5)
3.4 ± 0.15
4.4 ± 0.3
R1.4 (sphere)
Ø 2.9 ± 0.15
2.54 nom.
1.5 ± 0.5
+ 0.15
+ 0.2
0.5 - 0.1
0.4 - 0.05
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5255.01-4
Issue: 9; 28.07.14
Rev. 1.2, 14-Oct-14
Document Number: 83494
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000